DIODE IFM 40 A TRANSIL 30 V Search Results
DIODE IFM 40 A TRANSIL 30 V Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CEZ6V2 |
![]() |
Zener Diode, 6.2 V, ESC | Datasheet | ||
CUZ6V8 |
![]() |
Zener Diode, 6.8 V, USC | Datasheet | ||
CUZ20V |
![]() |
Zener Diode, 20 V, USC | Datasheet | ||
CUZ12V |
![]() |
Zener Diode, 12 V, USC | Datasheet | ||
MUZ5V6 |
![]() |
Zener Diode, 5.6 V, USM | Datasheet |
DIODE IFM 40 A TRANSIL 30 V Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
schaffner heatsinkContextual Info: RBO40-40M REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES PROTECTION AGAINST ”LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min. |
Original |
RBO40-40M PowerSO-10TM schaffner heatsink | |
schaffner ri 229 pc
Abstract: Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31
|
Original |
RBO40-40G/M/T RBO40-40G PowerSO-10TM RBO40-40M O220AB RBO40-40T schaffner ri 229 pc Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31 | |
schaffner ri 229 pc
Abstract: SCHAFFNER NSG load dump pulse IR31 RBO40-40G RBO40-40M RBO40-40T VF13 marking code, t2
|
Original |
RBO40-40G/M/T RBO40-40G PowerSO-10TM RBO40-40M O220AB RBO40-40T schaffner ri 229 pc SCHAFFNER NSG load dump pulse IR31 RBO40-40G RBO40-40M RBO40-40T VF13 marking code, t2 | |
Contextual Info: RBO08-40T REVERSED BATTERY AND OVERVOLTAGE PROTECTION Application Specific Discretes A.S.D.TM FEATURES 2 DISSIPATION THROUGH PIN 2 : TAB CONNECTED TO GROUND MONOLITHIC SILICON CHIP NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING COMPONENT T1 BREAKDOWN VOLTAGE : 24 V min |
Original |
RBO08-40T | |
RBO08-40G
Abstract: RBO08-40T diode ir31 diode T2 TRANSIL RBO08-40M VF13 IR 30 D1 Diode
|
Original |
RBO08-40G/T RBO08-40G RBO08-40G RBO08-40T diode ir31 diode T2 TRANSIL RBO08-40M VF13 IR 30 D1 Diode | |
RBO08-40GContextual Info: RBO08-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ ■ 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD |
Original |
RBO08-40G/T RBO08-40G RBO08-40G | |
Schaffner NSG
Abstract: Schaffner NSG 510 diode ir31 Schaffner load dump generator TRANSIL IR32 schaffner nsg 500 b Schaffner NSG 500 c RBO40-40T VF13
|
Original |
RBO40-40G/T RBO40-40G O220-AB RBO40-40T Schaffner NSG Schaffner NSG 510 diode ir31 Schaffner load dump generator TRANSIL IR32 schaffner nsg 500 b Schaffner NSG 500 c RBO40-40T VF13 | |
Contextual Info: RBO40-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ PROTECTION AGAINST “LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY |
Original |
RBO40-40G/T RBO40-40G O220-AB RBO40-40o | |
Schaffner NSG
Abstract: diode ir31 Schaffner load dump generator schaffner nsg 500 b diode ifm 40 A transil 30 V marking code M31 RBO40-40T TRANSIL RBO40 RBO40-40G
|
Original |
RBO40-40G/T RBO40-40G O220-AB RBO40-40T Schaffner NSG diode ir31 Schaffner load dump generator schaffner nsg 500 b diode ifm 40 A transil 30 V marking code M31 RBO40-40T TRANSIL RBO40 RBO40-40G | |
Schaffner load dump generator
Abstract: load dump test
|
Original |
RBO40-40T Schaffner load dump generator load dump test | |
RBO08-40G
Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
|
Original |
RBO08-40G/M/T RBO08-40G PowerSO-10TM RBO08-40M RBO08-40G RBO08-40T RBO08-40M VF13 aluminium plane heatsink | |
diode ir31
Abstract: TRANSIL RBO08-40G transil diode equivalent transistor marking code SGs IR31 RBO08-40M RBO08-40T VF13
|
Original |
RBO08-40G/M/T RBO08-40G PowerSO-10TM RBO08-40M diode ir31 TRANSIL RBO08-40G transil diode equivalent transistor marking code SGs IR31 RBO08-40M RBO08-40T VF13 | |
MARKING 1F2
Abstract: STMicroelectronics DIODE marking code EE ESDA18-1F2 transil diode DIODE 76A AN1235 st Diode marking EE 1F2 Diode STMicroelectronics DIODE marking code
|
Original |
ESDA18-1F2 ESDA18-1F2 IEC61000-4-2 MARKING 1F2 STMicroelectronics DIODE marking code EE transil diode DIODE 76A AN1235 st Diode marking EE 1F2 Diode STMicroelectronics DIODE marking code | |
SM6HT24AContextual Info: SM6HT HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS FEATURES • High performance TRANSIL designed to fit high temperature environment like automotive applications ■ High reliability planar technology ■ High performance in voltage regulation mode |
Original |
DO-214AA) SM6HT24A | |
|
|||
sot666ipContextual Info: ESDALC6V1P6 ASD QUAD LOW CAPACITANCE TRANSIL™ ARRAY FOR ESD PROTECTION MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers Printers ■ Communication systems and cellular phones ■ Video equipment |
Original |
OT-666IP sot666ip | |
Contextual Info: ESDALC6V1P6 ASD QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : Computers Printers • Communication systems and cellular phones ■ Video equipment |
Original |
OT-666IP | |
ESDA6V1P6
Abstract: esda6v1
|
Original |
OT-666IP ESDA14V2BP6 ESDA6V15P6) ESDA14V2BP6) ESDA6V1P6 esda6v1 | |
ESD6V1Contextual Info: ESDA6V1P6 QUAD TRANSIL ARRAY FOR ESD PROTECTION ASD™ MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers Printers ■ Communication systems and cellular phones ■ Video equipment |
Original |
OT-666IP ESD6V1 | |
ESDA8V2-1J
Abstract: 8V2 diode mil std 883G diode marking e8
|
Original |
OD-323 ESDA8V2-1J 8V2 diode mil std 883G diode marking e8 | |
diode marking e8Contextual Info: ESDA8V2-1J EOS and ESD Transil protection for charger and battery port Features • Breakdown voltage VBR = 8.2 V ■ Unidirectional device ■ High peak power dissipation: 500 W 8/20 µs waveform ■ ESD protection level better than IEC 61000-4-2, level 4: |
Original |
OD-323 diode marking e8 | |
smb marking stmicroelectronics
Abstract: SM6HT24A SM6HT27A SM6HT30A SM6HT36A SM6HT39A SM6HT43A fast diode ifm if 40 A transil DO-214AA, SMB transil diode
|
Original |
DO-214AA) SM6HT24A SM6HT27A SM6HT30n smb marking stmicroelectronics SM6HT24A SM6HT27A SM6HT30A SM6HT36A SM6HT39A SM6HT43A fast diode ifm if 40 A transil DO-214AA, SMB transil diode | |
SM6HT24A
Abstract: SM6HT27A SM6HT30A SM6HT36A SM6HT39A SM6HT43A smb marking stmicroelectronics
|
Original |
DO-214AA) SM6HT24A SM6HT27A SM6HT30A SM6HT36A SM6HT39A SM6HT43A smb marking stmicroelectronics | |
SOT-666IP
Abstract: 020L2
|
Original |
OT-666IP SOT-666IP 020L2 | |
transil 428Contextual Info: SGS-THOMSON M ^©iy! gïïM KiO(gi sm4T6V8, A/220, a SM4T6V8C,CA/220C,CA TRANSIL FEATURES . PEAK PULSE POWER= 400 W @ 1ms. • BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. ■ UNI AND BIDIRECTIONAL TYPES. . LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR). |
OCR Scan |
CA/220C transil 428 |