DIODE IFM 40 A TRANSIL 30 V Search Results

schaffner heatsink

Contextual Info: RBO40-40M  REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES PROTECTION AGAINST ”LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.

schaffner ri 229 pc

Abstract: Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31
Contextual Info: RBO40-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES PROTECTION AGAINST "LOAD DUMP" PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.

schaffner ri 229 pc

Abstract: SCHAFFNER NSG load dump pulse IR31 RBO40-40G RBO40-40M RBO40-40T VF13 marking code, t2
Contextual Info: RBO40-40G/M/T  REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES PROTECTION AGAINST ”LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.

Contextual Info: RBO08-40T  REVERSED BATTERY AND OVERVOLTAGE PROTECTION Application Specific Discretes A.S.D.TM FEATURES 2 DISSIPATION THROUGH PIN 2 : TAB CONNECTED TO GROUND MONOLITHIC SILICON CHIP NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING COMPONENT T1 BREAKDOWN VOLTAGE : 24 V min

RBO08-40G

Abstract: RBO08-40T diode ir31 diode T2 TRANSIL RBO08-40M VF13 IR 30 D1 Diode
Contextual Info: RBO08-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ ■ 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD

RBO08-40G

Contextual Info: RBO08-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ ■ 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD

Schaffner NSG

Abstract: Schaffner NSG 510 diode ir31 Schaffner load dump generator TRANSIL IR32 schaffner nsg 500 b Schaffner NSG 500 c RBO40-40T VF13
Contextual Info: RBO40-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ PROTECTION AGAINST “LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY

Contextual Info: RBO40-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ PROTECTION AGAINST “LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY

Schaffner NSG

Abstract: diode ir31 Schaffner load dump generator schaffner nsg 500 b diode ifm 40 A transil 30 V marking code M31 RBO40-40T TRANSIL RBO40 RBO40-40G
Contextual Info: RBO40-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ PROTECTION AGAINST “LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY

Schaffner load dump generator

Abstract: load dump test
Contextual Info: RBO40-40T  Application Specific Discretes A.S.D.TM REVERSED-BATTERY AND OVERVOLTAGE PROTECTION FEATURES PROTECTIONAGAINST ”LOAD DUMP” EFFECT DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY NEGATIVE OVERVOLTAGE PROTECTION BY

RBO08-40G

Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Contextual Info: RBO08-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.

diode ir31

Abstract: TRANSIL RBO08-40G transil diode equivalent transistor marking code SGs IR31 RBO08-40M RBO08-40T VF13
Contextual Info: RBO08-40G/M/T  REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.

MARKING 1F2

Abstract: STMicroelectronics DIODE marking code EE ESDA18-1F2 transil diode DIODE 76A AN1235 st Diode marking EE 1F2 Diode STMicroelectronics DIODE marking code
Contextual Info: ESDA18-1F2 ASD Application Specific Devices TRANSIL : Transient Voltage Suppressor FEATURES AND BENEFITS: • ■ ■ ■ ■ Stand-off voltage 16V Unidirectional device Low clamping factor VCL/VBR Fast response time Very thin package: 0.65 mm DESCRIPTION

SM6HT24A

Contextual Info: SM6HT HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS FEATURES • High performance TRANSIL designed to fit high temperature environment like automotive applications ■ High reliability planar technology ■ High performance in voltage regulation mode

sot666ip

Contextual Info: ESDALC6V1P6 ASD QUAD LOW CAPACITANCE TRANSIL™ ARRAY FOR ESD PROTECTION MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers Printers ■ Communication systems and cellular phones ■ Video equipment

Contextual Info: ESDALC6V1P6 ASD QUAD LOW CAPACITANCE TRANSIL ARRAY FOR ESD PROTECTION MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : Computers Printers • Communication systems and cellular phones ■ Video equipment

ESDA6V1P6

Abstract: esda6v1
Contextual Info: ESDAxxxP6 ASD TRANSIL array for ESD protection MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : Computers Printers • Communication systems and cellular phones ■ Video equipment These devices are particularly adapted to the protection of symmetrical signals.

ESD6V1

Contextual Info: ESDA6V1P6 QUAD TRANSIL ARRAY FOR ESD PROTECTION ASD™ MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers Printers ■ Communication systems and cellular phones ■ Video equipment

ESDA8V2-1J

Abstract: 8V2 diode mil std 883G diode marking e8
Contextual Info: ESDA8V2-1J EOS and ESD Transil protection for charger and battery port Features • Breakdown voltage VBR = 8.2 V ■ Unidirectional device ■ High peak power dissipation: 500 W 8/20 µs waveform ■ ESD protection level better than IEC 61000-4-2, level 4:

diode marking e8

Contextual Info: ESDA8V2-1J EOS and ESD Transil protection for charger and battery port Features • Breakdown voltage VBR = 8.2 V ■ Unidirectional device ■ High peak power dissipation: 500 W 8/20 µs waveform ■ ESD protection level better than IEC 61000-4-2, level 4:

smb marking stmicroelectronics

Abstract: SM6HT24A SM6HT27A SM6HT30A SM6HT36A SM6HT39A SM6HT43A fast diode ifm if 40 A transil DO-214AA, SMB transil diode
Contextual Info: SM6HT High temperature Transil for automotive applications Features • High performance TRANSIL designed to fit high temperature environment like automotive applications ■ High reliability planar technology ■ High performance in voltage regulation mode

SM6HT24A

Abstract: SM6HT27A SM6HT30A SM6HT36A SM6HT39A SM6HT43A smb marking stmicroelectronics
Contextual Info: SM6HT HIGH TEMPERATURE TRANSIL FOR AUTOMOTIVE APPLICATIONS FEATURES • High performance TRANSIL designed to fit high temperature environment like automotive applications ■ High reliability planar technology ■ High performance in voltage regulation mode

SOT-666IP

Abstract: 020L2
Contextual Info: ESDA6V1-5P6 TRANSIL ARRAY FOR ESD PROTECTION ASD™ MAIN APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers Printers ■ Communication systems and cellular phones ■ Video equipment This device is particularly adapted to the protection of symmetrical signals.

transil 428

Contextual Info: SGS-THOMSON M ^©iy! gïïM KiO(gi sm4T6V8, A/220, a SM4T6V8C,CA/220C,CA TRANSIL FEATURES . PEAK PULSE POWER= 400 W @ 1ms. • BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. ■ UNI AND BIDIRECTIONAL TYPES. . LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR).