DIODE H60 Search Results
DIODE H60 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE H60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
semiconductor
Abstract: hirect H507CH Hirect diode H400TB
|
Original |
semiconductorhirect h507chhirect diodeh400tb | |
MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
|
OCR Scan |
108thmt11152n3303fpt100 phototransistor+7 | |
|
Contextual Info: Laser Diodes AIGaAs laser diode RLD-78NP15 The RLD-78NP15 is the world’s first mass-produced laser diodes that is manufactured by molecular beam epi taxy. The properties, high speed and high output operation characteristics this laser diode make it suitable for la |
OCR Scan |
rld-78np15001bb53 | |
RLD-85PC
Abstract: RLD-85
|
OCR Scan |
rld-85pcrld-85 | |
|
Contextual Info: Laser Diodes AIGaAs laser diode RLD-78P40 The RLD-78P40 is a high-output laser diode designed for optical disc w rit ing. This device obtains a high cou pling efficiency with the optical system and has stable playback characteris tics. •E xte rn a l dimensions Unit: mm |
OCR Scan |
rld-78p40 | |
|
Contextual Info: Laser Diodes AIGaAs laser diode RLD-78P40 The RLD-78P40 is a high-output laser diode designed fo r optical disc w rit ing. This device o b tain s a high cou pling efficiency with the optical system and has stable playback characteris tics. •E xte rn a l dimensions Unit: mm |
OCR Scan |
rld-78p40 | |
|
Contextual Info: 3mm Infrared LED,T-1 IR204/H60 Features ․High reliability ․High radiant intensity ․Peak wavelength λp=940nm ․2.54mm Lead spacing ․Low forward voltage ․Pb Free ․This product itself will remain within RoHS compliant version. Description ․EVERLIGHT’s Infrared Emitting Diode IR204/H60 is a |
Original |
ir204/h60940nmdir-0000090 | |
|
Contextual Info: Technical Data Sheet 3mm Infrared LED, T-1 IR204/H60 Features High reliability 2.54mm lead spacing Low forward voltage Good spectral matching to Si photodetector Pb free The product itself will remain within RoHS compliant version. Descriptions EVERLIGHT’s infrared emitting diode IR204/H60 is a high intensity |
Original |
ir204/h60dir-0000036 | |
hp601
Abstract: 4711 photodiodes
|
Original |
hp6014711photodiodes | |
LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
|
OCR Scan |
3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7 | |
1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
|
OCR Scan |
1n6227silecgg 841n623+6 | |
IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
|
OCR Scan |
ic hxj 20381n52398db5ttfk 102 cny 70+6 | |
|
Contextual Info: Laser Diodes AIGaAs laser diodes RLD-78MC The RLD-78MC is the w orld's first mass-produced laser diodes that is manufactured by molecular beam epi taxy. The characteristics of this laser diode are suitable for use In sensors and bar code readers. •External dimensions Unit: mm |
OCR Scan |
rld-78mc | |
48h diode zener
Abstract: diode zener 48H daily production report sheet
|
Original |
qa1007-202f24hrsiso/ts16949+6 | |
|
|
|||
|
Contextual Info: Sensors Photointerrupter using photo 1C, double-layer mold type RPI-1133 T h e R P I-1133 is a com pact, transm issive-type photointerrupter. T he em itter is a GaAs infrared light em itting diode and the detector is a silicon photo IC. •E x te rn a l dimensions Unit: mm |
OCR Scan |
rpi-1133i-1133 | |
|
Contextual Info: Laser Diodes AIGaAs laser diode RLD-78MA The RLD-78M A is w o rld ’s firs t m ass- •E x te rn a l dim ensions Unit: mm produced laser diodes that is manufac tured by m olecular beam epitaxy. The sig n a l-to -n o ise ratio is stable in co m parison to conventional manufacturing |
OCR Scan |
rld-78marld-78m001bb30f-720khz+2 | |
RLD-78MDContextual Info: Laser Diodes AIGaAs laser diode RLD-78MD T he R L D -78 M D is a la s e r d io d e d e • E x te rn a l dim ensions Unit: mm signed for m inidisc playback. This de vice has low noise at high optical o u t 90° ± 2' put levels. •A p p lic a tio n s |
OCR Scan |
rld-78md | |
|
Contextual Info: Laser Diodes AIGaAs, near-infrared laser diode RLD-85PC T he R LD -85P C is th e w o r ld ’s firs t •E x te rn a l dim ensions Unit: mm m a s s -p ro d u c e d la se r d io d e th a t is manufactured by m olecular beam epi taxy. The wavelength is 850 nm for re |
OCR Scan |
rld-85pc | |
|
Contextual Info: Laser Diodes AIGaAs laser diode RLD-78NP15 T he RLD-78NP15 is the w o rld ’ s firs t ►External dim ensions Unit: mm m a s s -p ro d u c e d la ser d io d e s th a t is m anufactured by m olecular beam epi taxy. The pro pe rties, high spe ed and high o u tp u t operation characteristics |
OCR Scan |
rld-78np15 | |
H603ALContextual Info: HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 1998.07.01 Revised Date : 1999.08.01 Page No. : 1/5 MICROELECTRONICS CORP. H603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor Description This very high density process has been especially tailored to minimize onstate resistance and provide superior switching performance. These |
Original |
h603al | |
diode h60Contextual Info: Technical Data Sheet 3mm Infrared LED, T-1 IR204/H60 Features ․High reliability ․2.54mm lead spacing ․Low forward voltage ․Good spectral matching to Si photodetector ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions |
Original |
ir204/h60nodir-0000036date04-16-alsdate04-16-2009+1 | |
ultrasound TX pulser ic
Abstract: 6-pin supply ic tp35 ultrasonic transducer circuit cpld ultrasound piezo pulser circuit HV7370 HV748 Piezo Transducer ultrasonic r40 16 ultrasonic Oscilloscope USB 100mhz Schematic ultrasound piezoelectric design probe transducer
|
Original |
an-h60hv7370hv74832lead+9 | |
logic pulser specifications
Abstract: ultrasound pulser ic ultrasound piezo pulser circuit usb ultrasound probe 250v capacitor 33k programmable multi pulse waveform generator cpld AN-H60 logic pulser Ultrasonic Transducer application notes ultrasound transducer circuit pulse cpld
|
Original |
an-h60hv7370hv74832lead+10 | |
T12B1
Abstract: h607 H603 1803e H606 H600 H604 MC10H600 BF 273 transistor h601
|
Original |
an1402/dmc10/100h640r14525t12b1+9 | |