DIODE GERMANY Search Results

BAP51-02

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

17033

Abstract: VISHAY sot23 device Marking DC 17417
Contextual Info: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a

BAV70-GS18

Abstract: BAL99 BAV70 BAV70-GS08 BAV99 BAW56
Contextual Info: BAV70 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with

Contextual Info: BAW56 VISHAY Vishay Semiconductors Dual Switching Diode Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a

BAW56 GS18

Abstract: marking code JD BAW56 BAL99 BAV70 BAV99 BAW56 BAW56-GS08
Contextual Info: BAW56 VISHAY Vishay Semiconductors Small Signal Switching Diode, Dual Features 2 • Silicon Epitaxial Planar Diode • Fast switching dual diode with common anode • This diode is also available in other configurations including: a single with type designation BAL99, a

1N4448

Abstract: 1N4448W IMBD4448 LL4448
Contextual Info: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type

Contextual Info: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type

Contextual Info: LASER DIODE Laser diode L9278-14 TOSA type, 1310 nm FP Fabry-Perot laser diode Features Applications l Optical fiber communication l Gigabit ethernet l Fiber channel l 1310 nm FP (Fabry-Perot) laser diode l φ1.25 mm sleeve type TOSA (Transmitter Optical

Contextual Info: 1N4448W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the type

L9278-14

Abstract: SE-171
Contextual Info: LASER DIODE Laser diode L9278-14 TOSA type, 1310 nm FP Fabry-Perot laser diode Features Applications l Optical fiber communication l Gigabit ethernet l Fiber channel l 1310 nm FP (Fabry-Perot) laser diode l φ1.25 mm sleeve type TOSA (Transmitter Optical

1N4448

Abstract: 1N4448W-V-GS18 IMBD4448 LL4448 1n4448w-v
Contextual Info: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the

VISHAY diode MARKING

Contextual Info: BAV70 VISHAY Vishay Semiconductors Dual Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99, a dual common anode

1N4448

Abstract: 1N4448W-V-GS18 IMBD4448 LL4448 SOT23 DIODE marking CODE AV ll4448 vishay 1n4448w-v
Contextual Info: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

BAS70-07S

Abstract: BAS70-08S
Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF

marking D33

Abstract: BAS70-07S BAS70-08S
Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: 1N4151W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type

Contextual Info: 1N4151W VISHAY Vishay Semiconductors Small Signal Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with the type

1N4448W-V-GS18

Abstract: 1N4448W-V-GS08
Contextual Info: 1N4448W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode. e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4448, the MiniMELF case with the

Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the MiniMELF case with

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

1N4151

Abstract: 1N4151WS-V 1N4151WS-V-GS08 1N4151WS-V-GS18 DO35 LL4151
Contextual Info: 1N4151WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode e3 • This diode is also available in other case styles including the DO35 case with the type designation 1N4151, and the MiniMELF case with