DIODE G8 Search Results

G8060

Abstract: ruru8060 RUR 0820 TB-01
Contextual Info: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number

DIODE g8

Abstract: BAV170LT1 G8 MARKING
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode This switching diode has the following features: . Low Leakage Current Applications . Medium Speed Switching Times . Available in 8 mm Tape and Reel BAV170LT1 Use BAV170LT1 to order the 7 inch/3,000 unit reel

UPS APC 800 CIRCUIT

Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
Contextual Info: Laser Diode Products for the OEM  INTRODUCTORY INFORMATiON Who we are & what we do Thank you for your interest in Power Who we are Technology, Inc. The past three decades k Manufacturer of OEM laser diode products for analytical, biomedical, & industrial applications

F7422D

Contextual Info: PD - 9.1412H International IG R Rectifier IR F7422D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V qss = -20 V

Contextual Info: _ 3B69720 GENERAL DIODE CORP _ 07C00256 D -r . y t GENERAL DIODE CORP □? D E ^ 3 0 ^ 7 2 0 000055b 1 | SILICON PNP - Power Transistors TYPE MO. MAX. COLL. H MAX. EHSS. A THERMAL X. M RES. Fim iM Ctm i T A» te C m #25* C E M rtyw

zener smd diode h9

Abstract: smd diode zener H8
Contextual Info: BZT52C2V0K ~ BZT52C75K Taiwan Semiconductor Small Signal Product 200mW, Surface Mount Zener SMD Zener Diode FEATURES - Wide zener voltage range selection : 2.4V to 75V - Surface Mount Device type - Moisture sensitivity level 1 - Pb free and RoHS compliant

Contextual Info: SKDH 100 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik #:; #; #-; =- 5 "" > 2   4 # 6"" ,"" !""

thyristor 60 A

Contextual Info: SKDT 60 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik #:; #; #-; =- 5 " > 2   4 # !"" 6"" ,""

Contextual Info: RECTIFIER, up to 1kV, 3.25A, 300ns January 29, 1998 3PF8 3PF0 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED FAST RECTIFIER DIODE QUICK REFERENCE DATA Low reverse recovery tim e Glass passivated for herm etic sealing

7.5kv diode

Contextual Info: PFM50A/PFM75A Axial Leaded Hermetically Sealed High Voltage Fast Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ ‹ VR = 5 - 7.5kV IF = 92mA trr = 250nS IR = 0.5µA Low reverse recovery time Very low leakage current

Contextual Info: SEMiX 252GB176HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  -  * + 0 -  '* + 045   )*+,

IGBT 4A

Contextual Info: SEMiX 302GB176HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  + , 1 .  '+ , 145   )+,-

Siliconix mos fet

Abstract: fiat G117 G117AL
Contextual Info: designed fo r . • . s Siliconix Gl 17 Monolithic 5-Channel Enhancement-Type MOS FET Switch BENEFITS • Switching Analog Signals ■ M ultiplexing w ith Enable Switch Reduces External Component Requirements ' o Internal Zener Diode Protects the Gate o Five Switches Per Chip

Contextual Info: UP lI January 7, 1998 3.5A, 2 .5 |iS 3PM2 3PM6 3PM0 3PM4 3PM8 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE QUICK REFERENCE DATA • • • • • • V r = 200- 1000V • If = 3.5A

Contextual Info: SEMiX 403GD128Dc power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  '+ , 1 .  0+ , 156   '+,-

G122

Abstract: G122AL
Contextual Info: designed for . . . S Siliconix G122 Monolithic 4-Channel Enhancement-Type MOS FET Switch B E N E FIT S • Switching A nalog Signals such as D ifferential Inputs M ultiplexing Reduces E xternal C om ponent Requirem ents o o Internal Zener Diode Protects the Gate

Contextual Info: SEMiX 754GB128Ds power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  '+ , 1 .  0+ , 156   '+,-

Contextual Info: SEMiX 302GB126HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  /  * 2 /  ')1 * 256   ()*.

Contextual Info: SEMiX 251GD126HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  .  * 1 .  ')0 * 156   ()*-

123AP

Contextual Info: designed for . . . Siliconix G123 H M onolithic 4-Channel Enhancement-Type MOS FET Switch BENEFITS • Switching Analog Signals Reduces External C om ponent Requirements Internal Zener Diode Protects the Gate Four Switches Per Chip ■ M ultiplexing Intergrated MOS FET fo r Each Gate to

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

604GB176HD

Contextual Info: SEMiX 604GB176HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter   * +,       # Absolute Maximum Ratings Symbol Conditions IGBT 

453G

Contextual Info: SEMiX 453GB176HDs power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter   * +,       # Absolute Maximum Ratings Symbol Conditions IGBT 

Contextual Info: SEMiX 353GB176HD power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter   +,-       # Absolute Maximum Ratings Symbol Conditions IGBT  .  )+ ,