DIODE FR 207 Search Results

X10391

Contextual Info: 4N47, 4N48, 4N49 OPTOCOUPLERS D 2413, F E B R U A R Y 1978 - R E V IS E D S E P T E M B E R 1981 G A L LIU M ARSENIDE DIODE IN FR A R E D SOURCE O PTIC A LLY COUPLED TO A HIG H -G A IN N-P-N SILICO N PHOTOTRANSISTOR • JAN, JA N TX , JA N T X V Versions Available

FR 151 diode

Abstract: HJC.1 siemens mosfet BSM 50 diode fr 207
Contextual Info: SIEMENS SIMOPAC MOSFET Modules VDS lD BSM 151 F C BSM 151 FR = 500 V = 56 A ^DS(on) = 0.11 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode Package with insulated metal base plate Circuit diagram: Fig. 1 a 1)

Contextual Info: b3E • b EMTf iS? GD1 S G S7 M ITS U B IS H I DGTL 207 ■ M IT 3 MITSUBISHI BIPOLAR DIGITAL ICs M54538P LOGIC 7-UNIT 350mA TRANSISTOR ARRAY AND MOTOR DRIVER D E S C R IP T IO N The M54538P, 7-channel sink driver and a motor driver, is designed for use in a thermal printer.

Contextual Info: EL2075C elantec EL2075C 2 GHz GBWP Gaìn-ùf-lO Stable Operational Amplifier HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS F e a tu r e s G e n e ra l D escrip tio n • 2 GHz gain-bandwidth product The E L 2075 is a precision voltage-feedback amplifier featuring

Contextual Info: ê235bOS 0Û20c]a4 M El SIEG SlEIVli SIEMENS AKTIENGESELLSCHAF M7E D ; T - - 3 7 -3 Ì BSM 151 F C BSM 151 FR SIMOPAC MOSFET Modules Vos Id = 500 V = 56 A ^ D S (o n ) = 1 Q • Pow er m odule • Sin gle switch • FREDFET • N channel • Enhancem ent m ode

S280W555

Abstract: S280W555-753 JANTX1N6818 S280W555-104 S280W555-102 burndy terminal module block RBTB20-8 S280W555-108 M39039 S280W555-203
Contextual Info: RB Modules Description Applications Grounding and wiring integration devices for commercial/military aircraft. Standards Characteristics Material • Ground block body : aluminium alloy • Feed back modules body : polyphenylene sulfide PPS • Ground track body : PPS

TA317

Abstract: M3142 Ultra Fast Recovery Double Rectifier Diodes BYQ28F BYQ28F-50
Contextual Info: SbE D • 711002b □ □ m S I D DID ■ PHIN BYQ28F SERIES 1 PHILIPS INTERNATIONAL T - 0 3 - 1 7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic

68066

Abstract: MBR4045WT IRFP460 60490
Contextual Info: Bulletin PD-20715 rev. A 09/00 MBR4045WT SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 45V Major Ratings and Characteristics Characteristics Description/Features Values Units 40 A IFRM @ TC = 125°C (Per Leg) 40 A VRRM 45 V IFSM @ tp = 5 µs sine 1020 A VF

IRFP460

Abstract: MBR4045WT 035H B1201
Contextual Info: Bulletin PD-20715 rev. B 12/01 MBR4045WT SCHOTTKY RECTIFIER 40 Amp IF AV = 40Amp VR = 45V Major Ratings and Characteristics Characteristics Description/Features Values Units 40 A IFRM @ TC = 125°C (Per Leg) 40 A VRRM 45 V IFSM @ tp = 5 µs sine 1020 A VF

df2 diode

Abstract: SAP1024B SEN6A39 diode df2 AVANT SAP1024B SAP1024 SEN6A39LQFP LQFP100 QFP100 SEN6A40
Contextual Info: DATA SHEET SEN6A39 80-COLUMN driver for dot-matrix STN LCD To improve design and/or performance, Avant Electronics may make changes to its products. Please contact Avant Electronics for the latest versions of its products data sheet v3 2005 Oct 20 SEN6A39

175BGQ045

Abstract: 175BGQ045J c248a
Contextual Info: PD-20710 rev. C 11/99 175BGQ045 175BGQ045J SCHOTTKY RECTIFIER 175 Amp Major Ratings and Characteristics Characteristics Description/Features The NEW 175BGQ045 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in

100BGQ045

Abstract: 100BGQ045J
Contextual Info: PD-20709 rev. C 11/99 100BGQ045 100BGQ045J 100 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Characteristics Description/Features The NEW 100BGQ045 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in

Contextual Info: N AMER PHILIPS/DISCRETE 25E D •I bh53T31 0022405 4 ■ BYQ28F SERIES T - O'S-J'7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery

Contextual Info: P D -91754 International I R Rectifier IRHNB7Z60 IRHNB8Z60 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N -C H A N N E L M EG A RAD HARD 30Volt, 0.009ft, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s RAD HARD te c h n o lo g y HEXFETs demonstrate immunity to SEE failure. Addi­

10E-2

Abstract: 38E-2 80CPQ020 BV-24
Contextual Info: PD-20711 rev. B 11/99 80CPQ020 80 Amp SCHOTTKY RECTIFIER TO-247AC Description/Features This center tap Schottky rectifier has been optimized for ultra low forward voltage drop specifically for 3.3V output power supplies. The proprietary barrier technology allows for reliable

0135Z0400

Abstract: diode fr 207
Contextual Info: 5SDD 0135Z0400  5SDD 0135Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 2 kHz Key Parameters = 400 V RRM

diode fr 207

Abstract: 5SDD0135Z0400 5sdd0135z0200 0135Z0400 0135Z0200
Contextual Info: 5SDD 0135Z0400 5SDD 0135Z0400 Housingless Welding Diode Properties § High forward current capability § Low forward and reverse recovery losses Applications § Welding equipment § High current application up to 2000 Hz Key Parameters = 400 V RRM = 13 526

409CNQ135

Abstract: 409CNQ150 40HFL40S02 IRFP460 IRFP460 SWITCHING FREQUENCY
Contextual Info: PD-20723 12/99 409CNQ. SERIES SCHOTTKY RECTIFIER 400 Amp TO-244AB Major Ratings and Characteristics Characteristics IF AV Rectangular waveform VRRM range IFSM @ tp = 5 µs sine VF @ 200Apk, TJ=125°C (per leg) TJ range Description/Features 409CNQ. Units

209CNQ135

Abstract: 209CNQ 209CNQ150 40HFL40S02 IRFP460 aval
Contextual Info: PD-20722 12/99 209CNQ. SERIES SCHOTTKY RECTIFIER 200 Amp TO-244AB Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 209CNQ. Units 200 A 135 to 150 V 10000 A 0.71 V - 55 to 175 °C waveform VRRM range IFSM @ tp = 5 µs sine

OZ 9936

Abstract: 129NQ 129NQ135 129NQ150 40HFL40S02 IRFP460
Contextual Info: PD-20719 12/99 129NQ. SERIES SCHOTTKY RECTIFIER 120 Amp Major Ratings and Characteristics Description/Features The 129NQ high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

189NQ

Abstract: 189NQ135 189NQ150 40HFL40S02 IRFP460 PD-20720
Contextual Info: PD-20720 12/99 189NQ. SERIES SCHOTTKY RECTIFIER 180 Amp Major Ratings and Characteristics Description/Features The 189NQ high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation

249NQ150

Abstract: 249NQ 249NQ135 40HFL40S02 IRFP460
Contextual Info: PD-20721 12/99 249NQ. SERIES 240 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Description/Features Characteristics 249NQ. Units IF AV Rectangular waveform 240 A 135 to 150 V 20000 A 0.72 V VRRM range IFSM @ tp = 5 µs sine VF @ 240Apk, TJ=125°C

max8675

Abstract: BY 409 500 va sine wave ups circuit 409DMQ135 409DMQ150 40HFL40S02 IRFP460
Contextual Info: PD-20724 12/99 409DMQ. Series SCHOTTKY RECTIFIER 400 Amp TO-244AB isolated doubler Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 409DMQ. Units 400 A 135 to 150 V 25,500 A 0.72 V - 55 to 175 °C waveform VRRM