DIODE FOOTPRINT Search Results

marking D33

Abstract: BAS70-07S BAS70-08S
Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: MSU277 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance 4. Micro Melf package, fits onto SOD 323/SOT 23 footprints Applications Band switching in VHF-tuners Construction Silicon epitaxial planar

S3 DIODE schottky

Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product specification 2003 Jun 23 Philips Semiconductors Product specification Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882

MAD1104

Abstract: 628-200
Contextual Info: MAD1104 and MAD1104e3 Switching Diode Array Steering Diode TVS Array SCOTTSDALE DIVISION APPEARANCE WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package

Contextual Info: PD-9.1647 International IQR Rectifier IRF7523D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a o r- ID K ur * - - 3 g an

F7422D

Contextual Info: PD - 9.1412H International IG R Rectifier IR F7422D 2 PRELIMINARY FETKY MOSFET & Schottky Diode • Co-packaged HEXFET Power MOSFET and Schottky Diode • Ideal For Buck Regulator Applications • Generation V Technology • SO-8 Footprint V qss = -20 V

S3 marking DIODE

Abstract: BAT54L S3 DIODE schottky MARKING C SOD882
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882

MARKING C SOD882

Abstract: nxp Standard Marking
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882

DIODE BAT86 replacement

Abstract: bat86
Contextual Info: BAT86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 DO-34 package. The diode

STPSC406B

Abstract: stpsc406d
Contextual Info: STPSC406 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC boost diode K A K Description TO-220AC STPSC406D The SiC diode is an ultrahigh performance power

ed 77A DIODE

Abstract: IRF7322D1
Contextual Info: PD- 91705A IRF7322D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint 1 8 K

transistor irf 645

Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
Contextual Info: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K K A K TO-220AC STPSC4H065D K A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

L30 dual diode

Contextual Info: STPS20200C Power Schottky diode Datasheet  production data Features Diode 1 • Low forward voltage drop A1  Very small conduction losses K Diode 2  Negligible switching losses A2  Extremely fast switching  Low thermal resistance K  -40°C minimum operating Tj

Contextual Info: International po-smnt IO R Rectifier IR F 7 4 2 1 D 1 preliminary FETKY MOSFET andf Schottky Diode • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint

IRF7321D2

Abstract: ed 77A DIODE
Contextual Info: PD- 91667C IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K

MMAD1108

Abstract: Diode marking code e3
Contextual Info: MMAD1108 and MMAD1108e3 Switching Diode Array Steering Diode TVS Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT,

MMAD1109

Abstract: MMAD1107 msc diode
Contextual Info: MMAD1109 and MMAD1109e3 Switching Diode Array Steering Diode TVS Array SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering diodes protecting up to seven I/O ports from ESD, EFT,

IRF7523D1

Contextual Info: PD- 91647C IRF7523D1 FETKY MOSFET / Schottky Diode ● ● ● ● ● Co-packaged HEXFET Power MOSFET and Schottky Diode N-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = 30V

marking code SM 96 diode

Abstract: IRF7501
Contextual Info: PD -95437 IRF7526D1PbF l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology Micro8TM Footprint Lead-Free Description FETKY TM MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4 5

SOD87 footprint

Abstract: BOURNS SOD87 footprint 1408 IPA0619
Contextual Info: CHIP DIODES Bourns CD1408 Fast Response Diodes Riverside, California - October 25, 2006 - Bourns, Inc. is pleased to announce the new product release of the Fast Response Rectifier Diode family in a 1408 Chip Diode package, which fits an SOD-87 footprint. The CD1408-F1, CD1408-FF1 and CD1408-FU1 family series offers Glass Passivated Rectifier