DIODE F5 Search Results

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

diode 31 DF

Abstract: Kemet CAPACITOR DATE CODE MARKING suppressor diode smd IEC60063 100nF 63V polyester capacitor capacitor 100nf 63v MKT capacitor mkt 100nf 4019D
Contextual Info: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

Contextual Info: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

Contextual Info: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

LNCQ12PS

Contextual Info: Specifcations Laser Diode LNCQ12PS AlGaInP - Red Laser Diode (Record and reproduction for DVD) Features • Oscillation wavelength : 657 nm • Output power : 160 mW (Pulse) • Small size package : f5.6 mm Package Code • L5 Absolute Maximum Ratings Ta = 25°C

5BJC4100

Abstract: F5BHC 5BBC3820
Contextual Info: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting

Contextual Info: Specifcations Laser Diode LNC710PS AlGaAs-Infrared Laser Diode (For CD-R/RW) Features • Oscillation wavelength : 784 nm • Output power : 260 mW (Pulse) • Small size package : f5.6 mm Package Code • L5 Absolute Maximum Ratings Ta = 25°C Parameter

5BJC4100

Contextual Info: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting

LNCQ15PS

Contextual Info: Specifcations Laser Diode LNCQ15PS AlGaInP - Red Laser Diode (Record and reproduction for DVD) Under development Features • Oscillation wavelength : 660 nm • Output power : 240 mW (Pulse) • Small size package : f5.6 mm Package Code • L5 Absolute Maximum Ratings

DIODE N7

Abstract: N7 diode
Contextual Info: General Purpose, Pulse and DC Transient Suppression F5B Series Metallized Polyester Film with Integrated Suppression Diode, 18 – 63 VDC Overview Applications The F5B Series is a metallized polyester film capacitor with an integrated suppression diode encapsulated in a thermosetting

varistor smd marking code

Contextual Info: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

capacitor 0.1 k 100 MKT

Contextual Info: F5B Capacitor / Diode unit metallized POLYester film CAPACITOR with Integrated bidirectional suppressor diode High performance peak reduction Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

IEC60063

Abstract: capacitor mkt 100nf
Contextual Info: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

capacitor 100nf 63v MKT

Abstract: IEC60063 DIODE smd marking AA diode marking df diode smd marking ck DIODE marking EG 94 kemet c.93 suppressor diode smd Diode HDB 5
Contextual Info: F5B Capacitor / Diode unit METALLIZED POLYESTER FILM CAPACITOR WITH INTEGRATED BIDIRECTIONAL SUPPRESSOR DIODE HIGH PERFORMANCE PEAK REDUCTION Typical applications: these component units are used to strongly reduce transient phenomena and act as EMI-RFI suppressors for automotive motors and other suppression

Contextual Info: Emitter Specifications F5G1 Infrared Emitter Gallium Aluminum Arsenide Infrared Emitting Diode T he F5G1 is a Gallium-Aluminum-Arsenide, infrared emitting diode which emits non-coherent, infrared energy with a peak wavelength of 880 nanometers. This device will provide a significant increase in

laser rise time

Abstract: lens laser diode NEC DIODE LASER nec laser diode CQF51
Contextual Info: Philips Components cqfsi _ J v_ BURIED HETEROJUNCTION InGaAsP LASER DIODE W ITH SINGLE MODE FIBRE PIGTAIL The C Q F51 is an InG aAsP buried heterojunction semiconductor laser diode. The device is designed for high-speed long distance, optical communication and data transmission.

OF3603N-F5

Abstract: PDF PIN APD DIODE DESCRIPTION sc technical drawing PEDF3603N-F5-01
Contextual Info: PEDF3603N-F5-01 1Electronic Components OF3603N-F5 This version: Nov. 2000 1310 nm SMT Avalanche Photo Diode Module with Single Mode Fiber GENERAL DESCRIPTION The surface mount type APD-Preamp module is a avalanche photo diode coupled to a single mode fiber with a

OF3604N-F5

Abstract: PDF PIN APD DIODE DESCRIPTION OF3603N-F5 PDEF3604N-F5-01 PEDF3604N-F5-01
Contextual Info: PEDF3604N-F5-01 1Electronic Components OF3604N-F5 This version: Nov. 2000 1310 nm SMT Avalanche Photo Diode Module with Single Mode Fiber GENERAL DESCRIPTION The surface mount type APD-Preamp module is a avalanche photo diode coupled to a single mode fiber with a

C-150

Abstract: IRF1010 IRF530S IRGB15B60KD IRGS15B60KD IRGSL15B60KD IRL3103L
Contextual Info: PD - 94383C IRGB15B60KD IRGS15B60KD IRGSL15B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

AN-994

Abstract: C-150 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94925 IRGB10B60KDPbF IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGB10B60KD

Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94382B IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.