DIODE F 82 BP Search Results

bpw 82

Abstract: BPW82 M/BPW82
Contextual Info: BPW 82 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPW82 is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAlAs IR emitters lpy800nm .

Contextual Info: SK50GARL065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GARL065 *'-) RSS N KU V B- I WS L$ US V TJS V Z JS N BP I TJK L$ TS _- B- I JK L$ JK V B- I WS L$ Ta V C$XYI J : C$0%&

smd JSs

Abstract: smd JSs diode
Contextual Info: SK50GB065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY IGBT Module SK50GB065 *'-) RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ RU V B- I WS L$ UW V C$XYI J : C$0%&

DIODE B82

Contextual Info: SK50GAL065 B- I JK L$M 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT N$OG BP I JK L$ C$ BP I TJK L$ C$XY RSS N KU V B- I WS L$ US V RS V Z JS N BP I TJK L$ TS _- B- I JK L$ Ka V B- I WS L$ [W V TSS V BP I TKS L$ UUS V B- I JK L$

powerex ME60

Contextual Info: POUEREX INC m U B 1SE D iE • 73141,51 0 0 0 3 3 0 7 =1 ■ X 7 ^ 3 -4 ? ME602006 Powerex, Inc., HHIIs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 ThfQQm Ph3SQ

CD410430

Abstract: CD410830 BP107 CD41 CD4104
Contextual Info: mjmmex POWEREX INC 1SE D • 7HTMfc,21 0GD3SS3 T CD410430 CD410830 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual Diode POW-R-BLOK Modules

Photo Detectors

Abstract: diode 725 BPW50
Contextual Info: BPW SERIES SILICON PIN PHOTO DIODES A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, w ith high rejection of wavelengths less than 7 0 0 nm. The devices have low junction capacitance and thus are capable

Contextual Info: SbE D • ^70570 D DD 7D 3ti Eb2 « Z E T B BPW SERIES ZETEX SEMICONDUCTORS SILIC O N PIN PHOTO D IO D ES " F 4 l~ A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection

ph 33j

Contextual Info: POUIEREX I NC m U D B tE K • TS^maSl ODGMflOl T BPRX _ ID 2 S 1 2 7 B Powerex, Inc., H lllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14

prx 11003

Abstract: prx 154 IEF212A2 BP107 laser power control
Contextual Info: PO WE RE X m INC BTE m e x T> • 72^21 000MÔ71 _ Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 fl H P R X IEF212A2

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

Contextual Info: SIEMENS BPX92 SILICON PHOTODIODE FEATURES * Silicon Planar Photodiode * Transparent Plastic Case * 0.2" S.08 mm Lead Spacing • Low Dark Current, 1 nA Maximum Ratings O perating and Storage Tem perature R ange (To p, T3rG) -4 0 ° to +80°C Soldering Tem perature (2 m m from case bottom ), (Ts ) t£ 3 s

BPW42

Abstract: carel ir 32 carel TSUS3400 bpw 81 t bpw 82
Contextual Info: it ». . „ „ .J TELEFUNKEN ELECTRONIC 17E D • ÛSEDO^b 000Ô434 7 BPW42 ■¡THiLltFlMlKIKI electronic CrMtw« TKtaotoges Silicon NPN Epitaxial Planar Phototransistor Applications: Detector in electronic control and drive circuits Features: • Plastic case 0 3 mm T-1

BPX92

Abstract: Bpx 95 photodetector 850 nm aa3b
Contextual Info: SIEMENS BPX92 SILICO N PHOTODIODE Package D im ensions in Inches mm Chip position FEATURES * Silicon Planar Photodiode * Transparent Plastic C a se Photosensitive area 051 x 031 (1 3 x 8) ' * 0.2* (S.08 mm) Lead Sp ac in g 0 1 6 (4 ) 006 ( 2) • Low D ark Current, 1 n A

Contextual Info: Panasonic ICs for TV AN5025K Remote Control Receiving 1C • Overview Unit ! mm The AN5025K is an integrated circuit for the receiving preamplifier of the infrared remote control system, and consists of the first amplifier, limiter amplifier, BPF, signal waveform detector, and waveform shaping circuit.

Contextual Info: L4E J> POWEREX INC m 7 2 ci4b21 DD0b55S 3bfl H P R X m M B R EX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 HIGH-BETA DARLINGTON TRANSISTOR MODULES (Continued)

Contextual Info: L I T E M ARROWHEAD POINTERS LED LAMPS ï I LTL-8212A BRIGHT RED LTL-8222A HIGH EFFICIENCY RED LTL-8232A GREEN TAIUAN L I T °N ELECTRONIC D FEATURES LTL-8252A YELLOW LTL-8292A ORANGE ÔÔBSti^S D0D3S14 'iSfl I • HIGH V IS IB IL IT Y POINT SOURCE. • MOST S U IT A B LE FOR DIR EC TIO N IN D IC ATO R

panasonic pip

Abstract: AN5025K integrated circuit pin layout block diagram of tv remote control Panasonic TV remote
Contextual Info: Panasonic ICs for TV AN5025K Remote Control Receiving 1C • Overview The AN5025K is an integrated circuit for the receiving preamplifier of the infrared remote control system, and consists of the first amplifier, limiter amplifier, BPF, signal waveform detector, and waveform shaping circuit.

BP107

Abstract: RA204800A A2048
Contextual Info: m M B S RA20 4800A K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 General Purpose Rectifier 4800 Amperes Average 1200 Volts m i .

ZENER DIODE t2

Abstract: philips data book zener diode AS 108-120 BP317 BZD142 BZD142-68 philips zener diode IEC 60060-1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D119 BZD142 ZenBlockTM; zener with integrated blocking diode Preliminary specification 2000 Dec 19 Philips Semiconductors Preliminary specification ZenBlockTM; zener with integrated blocking diode BZD142

1SR35-400A

Abstract: BP5068A24 220v to 24v switching regulator circuits
Contextual Info: BP5068A24 AC/DC converter AC100V C100V input, −24V/600mA 24V/600mA output Dimension Unit : mm Limits Unit Vi Io Vsurge Topr Tstg −90 0.8 2 −20 ~ +80 −25 ∼ +105 V Apk kV °C °C 11.3MAX. 34.5MAX. Mark Side Symbol 21.5MAX. Parameter Input voltage

photo transistor til 78

Abstract: MAX3667
Contextual Info: 19-1311; R ev 1 ;3 /9 8 A i > i x i y k i +3.3V, 6 2 2 M b p s SD H / SON E T L a s e r D r i v e r w ith A u to m a tic Power Control The M AX3667 is a com plete, + 3.3V laser d rive r with a u to m a tic p ow er co n tro l APC , d e sig n e d for SDH/ SONET applications up to 622M bps. It accepts differ­

BP317

Abstract: BYC8-600
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BYC8-600 Rectifier diode Freewheeling and power factor correction Product specification File under Discrete Semiconductors, SC02 October 1997 Philips Semiconductors Product specification Rectifier diode Freewheeling and power factor correction

BP317

Abstract: BYC8-600 BYC8B-600
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BYC8B-600 Rectifier diode Freewheeling and power factor correction Product specification File under Discrete Semiconductors, SC02 October 1997 Philips Semiconductors Product specification Rectifier diode Freewheeling and power factor correction