DIODE EVP 28 Search Results

CM20TF-24H

Abstract: igbt 600v 20a 600v 20a IGBT
Contextual Info: MITSUBISHI IGBT MODULES CM20TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V

150A 1200V IGBT MITSUBISHI

Abstract: CM75TU-24H
Contextual Info: MITSUBISHI IGBT MODULES CM75TU-24H HIGH POWER SWITCHING USE INSULATED TYPE A B F G H E E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC Measured M Point GwN EwN GvN EvN w N 5 - M5 NUTS E H E H K E J J TAB#110 t=0.5

CM30TF-24H

Abstract: igbt 600V 30A
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

CM15TF-24H

Abstract: 400v 15A igbt module
Contextual Info: MITSUBISHI IGBT MODULES CM15TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GwP EvP V

CM50TF-12H

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

600v 30a IGBT

Abstract: CM30TF-24H IGBT 1200V 60A
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. 2 TYP. BvN EvN M F R BwN EwN F R L K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of

Contextual Info: CM10AD05-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 10 Amperes/600 Volts G H H H A C H H H J K J K K S E N1 P1 OPEN OPEN OPEN

CM30TF-12H

Abstract: H bridge 300v 30a igbt 200v 30a
Contextual Info: MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE A S - DIA. 2 TYP. C K H H N GUP EUP GVP EVP GWP EWP U V W P D J E L N GUN EUN GVN EVN R Q R GWN EWN Q R P B TAB #250, t = 0.8 TAB #110, t = 0.5 F G M R P GuP GvP EuP U GuN EwP W

20-25kHz

Abstract: CM20AD05-12H CM20AD
Contextual Info: CM20AD05-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 20 Amperes/600 Volts G H H H A C H H H J K J K K S E N1 P1 OPEN OPEN OPEN

Contextual Info: CM10AD05-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Flexpak CIB Module Three Phase Converter + Three Phase Inverter + Brake + Thermistor 10 Amperes/1200 Volts G H H H A C H H H J K J K K S E N1 P1 OPEN OPEN OPEN

service-mitteilungen

Abstract: servicemitteilungen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN magdeburg BC149C GER-A Service Mitteilungen 4 WG 130 "service-mitteilungen" scans-048
Contextual Info: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN r a d i o -television NEUE AUSGABE: 10/73 DATUM: August 1973 I M P O R T - G E R Ä T E " VEF 206 " - ein Kofferempfänger mit 8 Wellenbereichen aus der SU Der Kofferempfänger "VEF 206" emp­

CM50TF-28H

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M J Y DIA. (4 TYP.) AA L L B TAB #110, t = 0.5

CM75TF-28H

Contextual Info: MITSUBISHI IGBT MODULES CM75TF-28H HIGH POWER SWITCHING USE INSULATED TYPE B D X Q X Q X Z - M5 THD 7 TYP. G u P Eu P G v P Ev P G wP EwP G u N Eu N G v N Ev N G wN EwN S N P P P R L C J A N U V W N E T K F M M U G M AA M Y - DIA. (4 TYP.) AA TAB #110, t = 0.5

CM50TF-28H

Abstract: igbt 800v 50a aa 118 diode
Contextual Info: MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE X A C Q X Q X Gu P E u P Gv P E v P Gw P E w P Gu N E u N Gv N E v N Gw N E w N S N Z - M4 THD 7 TYP. P P P D G G N U V R E W N T U K N M AA M L B J Y DIA. (4 TYP.) AA L TAB #110, t = 0.5

kd226

Abstract: KD522B transistor c 6073 transistor KT 209 M transistor kt 801 KD226B KT805AM Diode KD 521 a transistor KT 209 4413.13-02
Contextual Info: SERVICE-MITTEILUNGEN V E B RFT I N D U S T R I E V E R T R I E B ¡D j RUNDFUNK UND F E R N S E H E N raa/o te/ev/s/on | - Ausgabe 1968 M am 4-5 Seite 1 - 8 Mitteilung aus dem VEB RFT IV RuF Leipzig/S 1. Regenerierung von UKW-Tunern 1.1. Allgemeine Informationen

qf30aa60

Abstract: QF30AA40 IC 7403
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

IC 7403

Abstract: QF50AA40 QF50AA60 transistor bw 51
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF50AA40/60 QF50AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

transistor BU 5027

Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Contextual Info: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im

Contextual Info: MITSUBISHI IGBT MODULES CM30TF-24H MEDIUM POWER SWITCHING USE INSULATED TYPE A- - -B-C BuPEuP BvPEvP BwPEwP it tl- 1+ +1- 1+ + Tr E LJ: BuN EuN S - DIA. 2 TYP. BvN EvN D BwN EwN Description: -I- ä EuP« (BuN) I T GuNo— IGvN«— I (BwP) I GwPo— I

Contextual Info: MITSUBISHI IGBT MODULES CM50TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor

transistor BC-108

Abstract: dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625
Contextual Info: SERV IC E-M ITT EILU N G EN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN GSMi ra d io - television AUSGABE: 7/73 DATUM: Juni 1973 Neue Import - Geräte Kassetten-Tonbandgerät " M£ - 25 " Dae Gerät wird aus der VR Ungarn importiert und befindet sich ab

sy 320 diode

Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Contextual Info: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren

Contextual Info: Te m ic BZX55C. TELEFUNKEN Semiconductors Silicon Epitaxial Planar Z -D iodes Features • Very sharp reverse characteristic • L o w reverse current level • Very high stab ility • L ow n o ise • A vailab le w ith tighter toleran ces Applications V oltage stab ilization

3D24N

Abstract: 618 diode gd 4016 transistor kp 455-A6 radio fernsehen elektronik service-mitteilungen ZF-filter robotron 1PK0
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N .SKPTTCMRRP I radio - television | 1981 9 SEITE 1-4 Auf Wunsch zahlreicher Servicewerkstätten veröffentlichen wir nach­ folgend nochmals die von uns anzuwendenden