DIODE EQUIVALENT T25 4 Search Results

Contextual Info: M54HC155 M74HC155 SGS-THOMSON m DUAL 2 TO 4 LINE DECODER 3 TO 8 LINE DECODER HIGHSPEED tpD = 12 ns TYP. AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS

1084CE

Abstract: 1084-CE
Contextual Info: A JTi ,3803 - ’M i - lïnSftS B aiw M k sP 5 “ ¡¡¡§ H P A H A s vcc Small Outline Ceramic Hybrid Optocoupler High Speed TTL [ V - 4 VO 3G N D E F “ <£> 1,65mm Ì _ Device Isocom Ltd supplies high reliability devices for applications requiring an operating tem­

Contextual Info: HV53 HV54 Supertex inc. 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Information Package Options Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier HV53 HV5308DJ HV5308PJ HV54 HV5408DJ HV5408PJ

diode t25 4 j5

Contextual Info: SE1470 AIGaAs Infrared Emitting Diode FEATURES • Compact metal can coaxial package • 24° nominal beam angle » 880 nm wavelength . Higher output power than GaAs at equivalent drive currents • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to SD1420

Contextual Info: H V53 H V54 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Inform ation Package Options Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier 44 Lead Quad Plastic Gullwing Die 44 J-Lead Quad Ceramic Chip Carrier

Contextual Info: Optical disc ICs PWM Driver for CD and MD Players BH6505K T h e B H 6 5 0 5 K is a 4 -c h a n n e l P W M d riv e r d e s ig n e d fo r C D a n d M D p la y e r m o to r an d a c tu a to r d rives. T h e p o w e r M O S F E T output stag e allows for applications with low p ow er consum ption. This 1C also has a c h arge pum p circuit

2MB1100NC-120

Abstract: 2MBI1OONC-120 2mb1100 2mb1100n tl 271 2MBI100NC-120 IT0-22
Contextual Info: S d llG B T ^ ^ IL — JU N '> u - "j + 's V W r Ni^lJ—X j 2MBI100NC-120 X j 1200V / 100A/ 2 flilifl : Features High Speed Switching > *? • J± 8 *R j Voltage Drive • te - r > ? ? ? Low Inductance Module Structure : Applications • i — ^ IE W jE H >'< — ?

taser circuit

Abstract: 808 nm 100 mw SLD300 SLD323XT SLD323XT-1 SLD323XT-2 SLD323XT-21 SLD323XT-24 SLD323XT-25 SLD323XT-3
Contextual Info: , V J I N Ï I_S L D 3 2 3 X T High Power Density 1 W Laser Diode D escription Unit : mm Package O utline The SLD 323X T is a high power, gain-guided laser diode produced by M OCVD m eth od *1. C om pared to the SLD 300 Series, this laser diode has a high brightness

Si515

Contextual Info: d r i& t n ik l G B • * a x T ^ i ^ i L — " j T 's ' f W - f N '> J U n M y ’J - X j 2 M B 1 1 N C - 1 2 IJ - X ' j 1200V/100A/ 2 ffliifi : Features • y f H i g h Speed Switching • J±8*Rj Voltage Drive Low Inductance Module Structure ■E3& : Applications

TIL 815

Abstract: SLD300 SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-24 SLD322XT-3 diode T3 Marking 802B04
Contextual Info: I_ SLD322XT High Power Density 0.5 W Laser Diode Description Package Outline Unit : mm The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d *1. C om pared to the SLD 300 Series, this laser diode has a high brightness

Contextual Info: TC74HC4518P/F TC74HC4520P/F TC74HC4518P/F DUAL BCD COUNTER TC74HC4520P/F DUAL 4-BIT BINARY COUNTER T h e T C 7 4 H C 4 5 1 8 and T C 7 4 H C 4 5 2 0 a r e h i g h speed CMOS D U A L B C D / 4 - B I T B I N A R Y C O U N T E R f a b r i c a t e d w i t h s i l i c o n g a t e C 2MOS tech n o logy.

PQ05R

Abstract: PQ12RH11 PQ05RH11 PQ05RH1 PQ09RH1 PQ09RH11 PQ12RH1 PQ05RH11 Series
Contextual Info: P Q 05R H 1/P Q 05R H 11 Series 4-Terminal Low Power-Loss Voltage Regulators PQ0 5 RH1/11 Series • 1.5A Output, Low Power-Loss Voltage Regulators G en eral D escription The Sharp’s PQ 05R H 1/PQ 05R H 1 1 series 4terminal low power-loss voltage regulators

BC 104k capacitor

Abstract: 2190 ic for lg tv Modulation using OTA D 1413 transistor transistor RJH 30
Contextual Info: V T C INC 9388929 TT D D I ^300^5^ DDGIMGM 4 V T C I NC 99D 01404 VA2713 T *7 9 -0 7 -2 0 DUAL HIGH-SPEED OPERATIONAL TRANSCONDUCTANCE AMPLIFIER WITH LINEARIZING DIODES AND BUFFER P R E LIM IN A R Y LSP FAMILY DATA SHEETS FEATURES • Low Offset Voltage: 0.5mV

smd diode marking a6

Abstract: A2 diode smd 125OC BAS16X DIODE SMD T25 diode SMD MARKING CODE A6 diode t25 4 A6 SMD MARKING CODE A20
Contextual Info: Formosa MS SMD Switching Diode Array BAS16X List List. 1 Package outline. 2 Features. 2

A2 diode smd

Abstract: BAT54WS
Contextual Info: Formosa MS SMD Schottky Barrier Diode BAT54WS List List. 1 Package outline. 2 Features. 2

diode smd marking jy

Abstract: sot-23 JV A2 diode smd 100OHM BAS116 BAV170 BAV199 BAW156 marking code jy O SMD
Contextual Info: Formosa MS SMD Switching Diode BAS116/BAW156/BAV170/BAV199 List List. 1 Package outline. 2

A2x smd

Abstract: diode t25 4 A6 smd diode a6 marking 820 smd rectifier A2 diode smd smd diode code a2 smd transistor marking A2 100OHM MMBD2836 MMBD2838
Contextual Info: Formosa MS SMD Switching Diode MMBD2836/MMBD2838/MMBD7000 List List. 1 Package outline. 2

diode t25 4 a7

Abstract: marking code jg SMD diode DIODE smd marking A4 marking code JG SMD smd diode A4 smd diode marking jc sot23 diode t25 4 A6 smd diode marking a6 smd diode code A4 smd diode marking code a2
Contextual Info: SMD Switching Diode BAL99/BAV99/BAW56/BAV70 Formosa MS List List. 1 Package outline. 2

SMD MARKING CODE A20

Abstract: smd schottky diode sot363 marking A20 diode SCHOTTKY sot 363 marking code CD A2 diode smd marking 820 smd rectifier BAT54ADW BAT54BRW BAT54CDW BAT54SDW
Contextual Info: Formosa MS BAT54ADW/CDW/SDW/BRW/TW SMD Schottky Barrier Diode List List. 1 Package outline. 2

st smd diode marking code

Abstract: a20 Schottky diode st SMD MARKING CODE A20 st smd diode marking code C smd diode schottky code marking l2 A2 diode smd 100OHM BAT54AT BAT54CT BAT54ST
Contextual Info: Formosa MS SMD Schottky Barrier Diode BAT54T / AT / CT / ST List List. 1 Package outline. 2

SRD12

Abstract: 500C BYV255
Contextual Info:  APPLICATION NOTE MODELLING PARALLEL OPERATION OF POWER RECTIFIERS WITH PSPICE B. Rivet I - INTRODUCTION Fig.1 : Electrical and thermal models of a diode The behaviour of semiconductor components is always linked with the junction temperature. This is the case, for example, in current-sharing

DIODE T25 4 Jo

Abstract: DIODE T25 4 bo DIODE T25-4-bo
Contextual Info: N AMER PHILIPS/DISCRETE bbS3TBl D011011 S BR210 SERIES □ bE D T - 2 S - O G - BREAKOVER DIODES A range o f glass-passivated bidirectional breakover diodes in the TO-220AC outline, available in a + / 12% tolerance series of nominal breakover voltage. Their controlled breakover voltage and peak

diode t25 4 L9

Abstract: b196 transistor I444 transistor f151 transistor b196
Contextual Info: EVL32-O55Ü20A ✓ \ ° 7 — ^ ì > = L — )V L-JU POW ER T R A N S IST O R M ODULE : Features • I5W0E High Voltage • 7 >J — ifc-f U =t — KÆ3K • A S O ^ /a I ' • iëfâiïïi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type

MMBZ5221BW

Abstract: MMBZ5222BW MMBZ5223BW
Contextual Info: Formosa MS Zener Diode MMBZ5221BW THRU MMBZ5267BW List List. 1 Package outline. 2