DIODE EM 513 Search Results

em 518 diode

Abstract: em 513 diode diode em 513 diode 1600 rectifier
Contextual Info: EM 513, EM 516, EM 518 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A

em 518 diode

Abstract: em 513 diode diode em 513 diode 513 diode 518 EM518
Contextual Info: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

diode em 513

Abstract: em 518 diode
Contextual Info: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

Contextual Info: EM 513, EM 516, EM 518 ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A Reverse Voltage: 1600 to 2000 V Features                    !"#$ Mechanical Data      %&$"' %&$" 

mst 702 lf

Abstract: OLD232 INFRARED DIODES OLD232-2 light emitting diode general 910nm
Contextual Info: OKI electronic components OLP232-2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD232-2 is a high-output GaAIAs infrared light em ission m icro-diode sealed w ith a glass lens in a highly reliable metal can on a TO-46 type stem . Its light em ission w a v e peaks at 910 nm.

DSA20T

Abstract: DSA20TB DSA20TC DSA20TE DSA20TG DSA20TJ DSA20TL
Contextual Info: Ordering number :EN2408 _ D S A 2 0 T No.2408 Diffused Junction Type Silicon Diode 2.0A Power Rectifier Junction Tem perature Storage T em perature II P eak Reverse Voltage V rm Average Rectified C urrent Io Surge Forward C urrent Ifsm rfsoo o a t Ta - 25°C

tlp721gb

Abstract: tlp721 MARKING TLP721F
Contextual Info: TLP721 GaAs IRED & PHOTO-TRANSISTOR T L P 7 2 1 O FFIC E M A C H IN E . H O U S E H O L D USE E Q U IP M E N T . S O L ID ST A T E R ELA Y. S W IT C H IN G P O W E R SUPPLY. The TOSHIBA TLP721 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a four lead plastic

SMD DIODE 513

Contextual Info: 1N4001.1N4007, 1N4007-1300 EM 513, EM 516, EM 518 Silicon Rectifier Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse •—nax . ç/ 2-6 X _ — 5 0 .2000 V

Mosfet K 135 To3

Abstract: IRF430 432Z til 431 IRF330 IRF331 IRF332 IRF333 IRF431 IRF432
Contextual Info: 7 9 6 4 1 4 2 5 / M C M iM fî c c ü r r ' A M n n r ' T n -ñfl DE | ? ci t i 4 1 4E 0 0 D S 1 B 4 S c 98D ;N e 0 5134 D T ^ J f- N-CHANNEL POWER MOSFETS IRF430/431/432/433 FEATURES • • • • • • • • • Low RDS on at high voltage ' Improved inductive ruggedness

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BAS516 High-speed diode 1998 Aug 31 Product specification File under Discrete Semiconductors, SC01 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode BAS516 PINNING FEATURES

Contextual Info: m IGBT 2230 7^ 2 OOOS'H? 513 • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Volts VcE sat V ge = 15V Switching Time (Max.) lc Rc R th RTH VF W Cont. PerIGBT Max. lc ton toff tf IGBT Diode Max. Max. Amps Watts Volts Amps usee. usee. usee.

DIODE RK 69

Abstract: BA rx transistor 111-BA ba rx varistor 741 CD 741 741 CN abb combiflex rtxe em 513 diode
Contextual Info: RTXE Component blocks COMBIFLEX 1MRK 513 019-BEN Page 1 Issued: September 2004 Revision: A Data subject to change without notice SE820256 Features • Requires no extra space. • For use in protection and control systems • To be mounted at the rear of the terminal

BAI 59 DIODE

Abstract: T346 1PS59SB20 AN 6752
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T 1PS59SB20 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Jul 28 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20

keyboard to DTMF

Abstract: "tone generator" PCD3315P PCD3315T S028 two Tone generator dtmf
Contextual Info: Philips Sem iconductors ^ bb53^EM □ 0 7 cì]i51 Repertory pulse dialler with redial ' NAPC/PHILIPS SEMICOND flTb WSIC3 O bjective specification PCD3315/512; PCD3315/513 b3E D — FEATURES ^ • • DTMF tone/pause 70/70 or 100/100 ms PCD3315/512 • Redial

Diode smd code sg

Abstract: BB141 diode sg 69
Contextual Info: DISCRETE SEMICONDUCTORS E ÂTÂ SlnlEET BB141 Low-voltage variable capacitance diode Preliminary specification Philips Sem iconductors 1999 May 12 PHILIPS Philips Semiconductors Preliminary specification Low-voltage variable capacitance diode FEATURES BB141

20N60C3DR

Contextual Info: X HGTG20N60C3DR M Aß , 40A, 600V, Rugged, UFS Series N-C hannel IGBT w ith A nti-Parallel U ltrafast Diode November 1996 Features Description • 40A, 600V at T c = 25°C This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as

BAP51-03

Abstract: DIODE S4 52 diode AY 101 AY106 AY103
Contextual Info: DISCRETE SEMICONDUCTORS [M m S M EET BAP51 -03 General purpose PIN diode Preliminary specification Supersedes data of 1999 Apr 01 Philips Semiconductors 1999 May 10 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-03

Contextual Info: DISCRETE SEMICONDUCTORS Product specification File under Discrete Semiconductors, SC01 Philips Sem iconductors 1998 Aug 17 PHILIPS Philips Semiconductors Product specification Low-voltage variable capacitance diode BB156 FEATURES • Excellent linearity • Very small plastic SMD package

AV73

Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s

Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET BAS70-07S Schottky barrier double diode 1998 Jul 10 Product specification Supersedes data of 1998 Feb 06 File under Discrete Semiconductors, SC01 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification

st smd diode marking code VU

Abstract: SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 24 Philips Sem iconductors 1999 Apr 28 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40 series PINNING SOT23 (see Fig. 1a) • Low forward voltage

PHILIPS TL

Abstract: um 44 diode
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T 1PS88SB48 Schottky barrier diodes Product specification Supersedes data of 1998 Aug 05 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier diodes FEATURES 1PS88SB48

IRFP140A

Contextual Info: Advanced IRFP140A P o w e r MOSFET FEATURES b v D SS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea ^ D S o n = ID

2AX SMD

Abstract: 12W SMD MOSFET mosfet 12w smd S132 .5A SMD Code 12W FS70VSJ-03 MBRD835L ac-dc voltage regulator using SCR circuit diagram MITSUBISHI mosfet fs series
Contextual Info: CS-5132 CS-5132 Dual Output CPU Buck Controller Description The CS-5132 is a d u al o u tp u t CPU po w er su p p ly controller. It con­ tains a synchronous d u al NFET b u ck controller utilizing th e V2 control m eth o d to achieve the fastest possible transient response