DIODE ED 9A Search Results

Contextual Info: Designed Checked Ap pr ov ed DEVELOPMENT SPECIFICATION p / N • T Y P Soft Orange L ig h t E m it t in g Diode E A P P L I C A T I O N In d ic a tio rs M A GaAsP O U A B T E T S R L O I I L A L N U TEMPORARY LNJ818C8SRU1 E At tached E P 60 60 mW mA T M A

Contextual Info: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

Contextual Info: PRODUCT Æ lttran CÂTÂl ' N-CHANNEL ENHANCEMENT MOS FET 1000V. 9A, 1.4 n S D F 9 N 100 JEA S D F 9 N 100 JEB S D F 9 N 100 JEC 5DF9N100 JED FEATURES • RUGGED PACKAGE HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS

Contextual Info: FSL13A0D, FSL13A0R D ata S h eet 9A, 100V, 0.180 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a se ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.

Contextual Info: FSS23A0D, FSS23A0R Data Sheet 9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a se ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.

Contextual Info: FU JI eiyMEirutìUtì 2SK2523-01 N-channel MOS-FET FAP-II Series 450V > Features - lß 9A 60W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications

STP9NC60FP

Abstract: STP9NC60
Contextual Info: STP9NC60 STP9NC60FP N-CHANNEL 600V - 0.6Ω - 9A - TO-220/TO-220FP PowerMesh II MOSFET TYPE STP9NC60 STP9NC60FP • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 0.75 Ω < 0.75 Ω 9.0 A 9.0 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY

STS9NF3LL

Contextual Info: STS9NF3LL N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS9NF3LL 30 V <0.019 Ω 9A TYPICAL RDS(on) = 0.016 Ω OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED

AAT2402

Contextual Info: PRODUCT DATASHEET AAT2402M/2402S SwitchRegTM 16 Channel White LED Driver Solution with Full LED Current and Timing Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2402M/ 2402S is a highly int egrat ed, high efficiency whit e LED backlight solut ion for large size LCD

Contextual Info: PRODUCT DATASHEET AAT2400/2401 SwitchRegTM 16 Channel White LED Driver Solution with Full LED Current and Timing Control Ge n e r a l D e scr ipt ion Fe a t u r e s The AAT2400/ 2401 is a highly int egrat ed, high efficiency whit e LED backlight solut ion for large size LCD panels

diode BY 127

Contextual Info: STB9NC60 STB9NC60-1 N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh II MOSFET TYPE STB9NC60 STB9NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 0.75 Ω < 0.75 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

IRFY340

Abstract: irfy430
Contextual Info: IOR IRFY Series Devices IRFY Series Data Sheet T h e IR F Y D a ta S h e e t d e s c rib e s 12 d e v ic e s , 8 N -C h a n n e l a n d 4 P -C h a n n e l, all c o n ta in e d in th e T O -2 5 7 A B p a c k a g e . T h is d a ta s h e e t is a rra n g e d to

2N7298D

Contextual Info: Œk H U U a r r is S E M I C O N D U C T O R 2N7298D, 2N7298R 2N72QQH REGISTRATION PENDING Currently Available as FRF450 D, R, H . Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 9A, 500V, RDS(on) >0.6150 TO-254AA • Second Generation Rad Hard MOSFET Retults From New Design Concept*

diode EZD

Abstract: diode AY 101
Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0-,฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * -33  +1 `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN

f9240

Abstract: irf9240r irf 44 n rf924
Contextual Info: HARRIS IR F 9 2 40 , IR F9241 IRF9242, IRF9243 Avalanche Energy Rated P-Channel Power MOSFETs A ugust 1991 Features Package T O -2Û 4A A BOTTOM VIEW • -9A and -11A , -15 0 V and -200V • rDS ON = 0 .5 0 0 and 0 .7 ÎÎ • Single Pulse Avalanche Energy Rated

ABB breaker S5

Abstract: RK618 dc switchgears single line diagram Light Sensitive Alarm Circuit Diagram using 555 RACIB rxtug2h relay 109 tree phase static relay RXMM 1 ASEA motor
Contextual Info: INFORMATION From/Date RFR, S ep t 19S1 E dition 3 ASgA,BftOYMNBOVERI Inro-No. RK 618-300 E BsflPâfi* 7431 1 ABB Relays F e e d e r p ro te c tio n ty p e RAÇIB The s ta tic fe ed er p ro te c tio n ty p e RACIB co n tain s th e fu n ctio n s th re e -p h a s e tim e -o v e rc u rre n t relay w ith in d ep en d en t or inverse

IC03b

Abstract: dmo 265 msa504 TEA1093 1069 QFP44 SDIP42 TEA1069 philips capacitor part numbering system TEA1069AH
Contextual Info: P hilips S em ico n d uctors Product sp ecification Versatile speech/dialler/ringer with music-on-hold T E A 1069; T E A 10 6 9A FEA TUR ES - pulse or D TM F m ode selection S peech part - register recall earth and flash tim es • V oltage regulator w ith adjustable static resistance

GP011

Abstract: STB9NC60
Contextual Info: STB9NC60  N - CHANNEL 600V - 0.5Ω - 9A D2PAK/I2PAK PowerMESH II MOSFET ν ν ν ν ν TYPE V DSS R DS on ID STB9NC60 600 V < 0.75 Ω 9 .0 A TYPICAL RDS(on) = 0.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK

MP 9141

Abstract: ze 003 driver LTA 702 N IRLMS6702 MARKING tAN SOT-23 MARKING tAN sot EE 16A transformer
Contextual Info: PD - 9.1414B IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V RDS(on) = 0.20Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

Diode SMD ED 9a

Abstract: RK 73 SMD marking SH SOT23 mosfet IRLMS6702 LTA 702 N MP 9141 MOSFET marking smd NU 702 mosfet smd marking DIODE marking S6 96 smd diode marking mp
Contextual Info: PD 9.1414A IRLMS6702 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V RDS(on) = 0.20Ω To p V ie w Description Fifth Generation HEXFETs from International Rectifier

IRLMS6702

Abstract: Diode SMD ED 98 RK 73 SMD smd diode marking mp 22AV
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1414 IRLMS6702 PRELIMINARY HEXFET Power MOSFET Generation 5 Technology ● Micro6 Package Style ● Ultra Low Rds on ● P-Channel MOSFET Description ● A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to

LTA 702 N

Abstract: ze 003 driver MP 9141 Lm 304 PN mp 315 IRLMS5703
Contextual Info: PD - 9.1413D IRLMS5703 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

smd diode marking LM

Abstract: IRLMS5703 702 mosfet smd marking Diode smd s6 95
Contextual Info: PD - 9.1413C IRLMS5703 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

diode smd ED 84

Abstract: EE 16A transformer ze 003 driver DIODE marking S6 89 IRLMS5703 3V REGULATOR SOT-23 smd marking 702 sot23 MOSFET marking smd NU 20mH SMD INDUCTOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1413B IRLMS5703 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier