DIODE ED 92 Search Results

hp11612a

Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Contextual Info: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑

LN66

Contextual Info: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l

Contextual Info: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

Contextual Info: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3220, NDL3220S 670 nm BAR CODE READER, POINTER APPLICATION AIGalnP M OW VISIBLE LASER DIODE DESCRIPTION N D L3220 is an A IG alnP 670 nm visib le laser d io d e and e s p e cially develop ed fo r B ar Code Reader and

GaAs 850 nm Infrared Emitting Diode

Abstract: LN52
Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur

6bv8

Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Contextual Info: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

V23134-A1052-X299

Abstract: "Power Relay"
Contextual Info: Power relay F4 V23134-A1052-X299 Data sheet change over with bracket and diode in parallel to the coil 3D40HB30.WMF Issued: 2005-11-14, Ed 02 Power relay F4 V23134-A1052-X299 02 max Dimensional drawing m ax Latching tab area max max Flat terminal similar

zener diode 1N PH 48

Abstract: zener diode 1N PH 44 1X1018 RH4895 1N4915A RH4895A RH939 1N4057 1N4085A 1N4565
Contextual Info: D3E d "| bllSflbS OODDö'i'i 4 MICROSEMI CORP 8700 E. Thomas Rd., P.O. Box 1390, Scottsdale, AZ 85252 Microjsemi Corp. ' The diode experts RADIATION HARD EN ED ^TEMPERATURE COM PENSATED SILIC O N ZENER REFERENCE DIO DES fl Phone: 602 941-6300 Fax: (602) 947-1503

DSAIH0002570

Contextual Info: B K C INTERNATIONAL Ü3E D | 117^03 □ □ □□ 13 ? _ Type NO.1N140_ G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135

DSAIH0002548

Abstract: 1N314
Contextual Info: B K C INTERNATIONAL 03E ] | HVTTöB □□00175 ‘i £ _ Type No. 1N314_ T - * t - o 7 G O LD BO N D ED G ER M A N IU M DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617) 681-0392 Tele Fax (617) 681-9135

LN66

Abstract: LN66L
Contextual Info: Infrared Light Emitting Diodes LN66L LN66(L GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 1.0 7.65±0.2 For optical control systems Not soldered 2.25 ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf

LN172

Abstract: 70nM
Contextual Info: Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm ø4.2 +0.2 –0.1 M Di ain sc te on na tin nc ue e/ d 2.4±0.3 12.7 min. 1.2±0.1 0.25±0.1 For optical control systems Features ue pl d in an c se ed lud pl vi an m m es si

DIODE RK 306

Abstract: tr/DIODE RK 306
Contextual Info: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.

Contextual Info: YG802C N 09 uoa) SCHOTTKY BARRIER DIODE •¡NHIc : Features • lfc w 11 # *e us £ t i t-.7 1\ , K ? -f 7 I nsul at ed packa g e by fu lly m o ld in g . • te V F IM tttt C onnection Diagram Low V k • X 'f S u p e r h ig h speed s w itc h in g . •

Contextual Info: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e

1NS14

Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
Contextual Info: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S

Contextual Info: niCRO PAC IN D U ST R IE S 42E IN C D b l l 2 b 4 G OOOCHOb H 1 B MPI GaAs LIGHT-EMITTING DIODE “PIGTAIL’ 62017 TYPE G S 3040 * HIGH INTENSITY G aA IA s VER SIO N A V A IL A B L E M i-U MINIATURE HIGH EFFICIEN C Y LED WITH N AR RO W BEAM A N G LE G LA S S/M E TA L W ELD ED P A C K A G E

SCR GTO

Abstract: RC firing circuit FOR SCR SCR Gate Drive scr RC snubber design dc circuit breaker using SCR gto firing circuit SCR 6 pulse Gate Drive selen scr latching RC snubber scr design inductive load
Contextual Info: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 2.0 POW-R-BLOK Module Mounting Figure 2.1 SCR/GTO/Diode POW-R-BLOK™ Modules Application Information Mounting Screw Fastening Pattern ➃ When mounting POW-R-BLOK™ modules to a heatsink, care

Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d (ON) BVdgs (max) (min) TO-39 TO-92 30V 1 .2 0 . 1.0A V N 0 30 0B V N 0 30 0L Advanced DMOS Technology High Reliability Devices See pages 5 -4 and 5-5 fo r M ILIT A R Y S T A N D A R D P rocess Flows

CM200E3Y-12E

Abstract: GE 047 TRANSISTOR
Contextual Info: m tm B C Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 CM200E3Y-12E Chopper IGBTMOD E-Series Module 200 Amperes/600 Volts Description: Powerex Chopper IGBTMOD™ Modules are designed for use in switching applications. Each

CM50E3Y-12E

Abstract: CM50E3Y
Contextual Info: m Ê Ê B Œ K CM50E3Y-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Chopper IGBTMOD E-Series Module 50 Amperes/600 Volts Description: CM50E3Y-12E Chopper IGBTMOD™ E-Series Module 50 Amperes/600 Volts Powerex C hopper IGBTMOD™

Contextual Info: 9.2mm x 1.9mm BACK LIGHT KA-9219/2EC HIGH EFFICIENCY RED KA-9219/2GC GREEN KA-9219/2YC YELLOW KA-9219/2SRC SUPER BRIGHT RED KA-9219/2SGC SUPER BRIGHT GREEN Features Description ! LOW The High Efficiency Red source color devices are made POWER CONSUMPTION.

Contextual Info: T O S H IB A MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 15Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 92 .7±0.6 • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode