DIODE ED 49 Search Results

Contextual Info: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers

ZENER 6.2V DO-214AC

Contextual Info: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

12sR7

Abstract: 12sr7, tube 500 watts audio amplifier diagram 12sr7 tube rs tube Scans-0017290
Contextual Info: 12SR7 PAGE I 12SR7 Description and Rating DUPLEX-DIODE TRIODE GENERAL DESCRIPTION Pr in ci pa l A p p l i c a t i o n : Th e ty pe I2SR7 is a d u p l e x diode medi um -m u triode ampl if ie rdesi gn ed for use as a c o m b i n e d d e t e c t o r , a u d i o a m p l i f i e r ,

Contextual Info: International S Rectifier HEXFRED Provisional Data Sheet PD-2.362 H FA 1 2 P A 1 2 0 C ULTRA FAST, SOFT RECOVERY DIODE 1200 V 6 .0 A F e a tu re s : — Ultra F as t R ecovery — Ultra So ft R ecovery — V e ry Low I r r m — V e ry Low Q rr — G u a ra n te ed A valan ch e

Contextual Info: 4bfibE2b OOO lbbl 7bl *IXY QIXYS MCC44 lTAV=2 x 49 A MCD44 vRRM= 400-1800 V Thyristor Modules Thyristor/Diode Modules > > > 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1800 1800* Ii V r*m Vo«, V Type Version 1 B MCC44-06ÌO1 MCC44-08ÌO1 MCC44-12io1

Contextual Info: CY7C235 CYPRESS SEMICONDUCTOR 1024 x 8 Registered PROM Features • CMOS for optimum speed/power • 5V +10% V cc, commercial and military • High speed — 25 ns max set-up — 12 ns dock to output • TTL compatible I/O • Low power — 495 mW commercial

F 407 Diode

Abstract: Marking STMicroelectronics
Contextual Info: BAT 49 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. DO 41 Glass

Contextual Info: Surging Ideas TVS Diode Application Note TEL: 805-498-2111 SI96-17 FAX: 805-498-3804 Intra-Building Lightning Protection for T1/E1 CMOS 1C Transceivers This application note illustrates how to implement secondary transient and power cross protection for T1/E1 circuits/CMOS transceivers which are

Contextual Info: BAT 49 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex­ cessive voltage such as electrostatic discharges. ABSOLUTE RATINGS limiting values

Contextual Info: SX8733/SX8743/SX8744 DATASHEET ADVANCED COMMUNICATIONS & SENSING Precision Diode Digital Temperature For Up To 3 External Sensors SX8733 P1 1 AL1 AL2 6 P2 5 VDD 4 SMBCLK D2- SMBDAT VDD SX8743 1 3 8 + ADC - SMBUS SMBCLK VDD P3 2 3 P1 4 +- + ADC - SMBUS 7

Contextual Info: Surging Ideas SI96-16 TVS Diode Application Note TEL: 805-498-2111 FAX: 805-498-3804 Outside Line Lightning Protection for T1/E1 CMOS 1C Transceivers This application note illustrates how to implement secondary transient and pow er cross protection for T1/E1 circuits/CM O S transceivers which are

4925 B equivalent ic

Contextual Info: 1N4916 thru 1N 4932A Microsemi Corp. y The ôiQôe expels SANTA A N A , C'A / ! SC O T T SD A L E \ A Z Fw more information call; / Í602 94I-630Ü FE A TU R E S 19.2 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • ZENER VOLTAGE 19.2V . TEMPERATURE COEFFICIENT RANGE: 0 .0 1 % /° C to 0 .0 0 1 % /° C

5082-2565

Abstract: hp 2817 hp 5082 2207 S3H 02 diode U1Z 07 u1z 99 hp 5082 2817 5082-2500 5082-2711 5082-2766
Contextual Info: COMPONENTS 5082 -2200 / 01/ 0 2 /0 3 5082 - 2207 / 08 / 09/10 5082 2 7 6 5 /6 6 5082 - 2774/75 5082 - 2 7 85/8 6 5082 - 2 7 9 4 /9 5 SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T PACKARD SCHOTTKY BARRIER DIODES FOR STRIPLINE, MICROSTRIP MIXERS

1N4896

Abstract: 1N4896A 1N4897 1N4897A 1N4898 1N4898A 1N4899 1N4899A 1N4915A 0107MA
Contextual Info: 1N 4896 th ru 1N 4915A / Microsemi Corp. The diode experts SC O TTSD A LE , A Z SANTA A N A , CA F o r m o re in fo rm a tio n call: 602 941-6300 12.8 VOLT LOW NOISE TEMPERATURE COMPENSATED ZENER R EFER EN C E DIODES FEATURES • ZENER VOLTAGE 1 2.8V . TEM PERATURE COEFFICIENT RANGE: 0.01 % / ° C to 0.001 % / ° C

Contextual Info: TOSHIBA 2SK2952 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2952 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR APPLICATIONS Low Drain-Source ON Resistance : Rd S (ON)= 0 -4 ^ (Typ.) High Forward Transfer Adm ittance : |Yfs| = 8.0S (Typ.)

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN SC4612H 40V Synchronous Buck Controller POWER MANAGEMENT Features          Wide input voltage range, 4.75V to 40V Internally regulated DRV 1.7A gate drive capability Low side RDS-ON sensing with hiccup OCP

Contextual Info: TOSHIBA 2SK2949 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2949 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source ON Resistance

MP 9141

Abstract: ze 003 driver LTA 702 N IRLMS6702 MARKING tAN SOT-23 MARKING tAN sot EE 16A transformer
Contextual Info: PD - 9.1414B IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V RDS(on) = 0.20Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

Diode SMD ED 9a

Abstract: RK 73 SMD marking SH SOT23 mosfet IRLMS6702 LTA 702 N MP 9141 MOSFET marking smd NU 702 mosfet smd marking DIODE marking S6 96 smd diode marking mp
Contextual Info: PD 9.1414A IRLMS6702 PRELIMINARY HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V RDS(on) = 0.20Ω To p V ie w Description Fifth Generation HEXFETs from International Rectifier

IRLMS6702

Abstract: Diode SMD ED 98 RK 73 SMD smd diode marking mp 22AV
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1414 IRLMS6702 PRELIMINARY HEXFET Power MOSFET Generation 5 Technology ● Micro6 Package Style ● Ultra Low Rds on ● P-Channel MOSFET Description ● A D 1 6 D 2 5 D G 3 4 S D VDSS = -20V Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to

LTA 702 N

Abstract: ze 003 driver MP 9141 Lm 304 PN mp 315 IRLMS5703
Contextual Info: PD - 9.1413D IRLMS5703 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

H05U

Contextual Info: TO SHIBA 2SK2841 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2841 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER A N D M O TOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS •

gz30

Abstract: onsemi marking 651
Contextual Info: NOT RECOMMENDED FOR NEW DESIGN SC415 Dual Synchronous Buck Controller POWER MANAGEMENT Features „ „ • • „ „ „ „ • • „ „ „ „ „ „ „ „ „ „ „ „ VIN Range 3-25V Outputs Adjustable from 0.75 to 5.25V, or Preset Output Voltages: VOUT1 = 1.8 or 1.5V