DIODE ED 35 Search Results

hp11612a

Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Contextual Info: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑

Contextual Info: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers

LN66

Contextual Info: Infrared Light Emitting Diodes LN66 GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 7.65±0.2 For optical control systems Not soldered ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l

RK105

Contextual Info: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package

Contextual Info: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode

selfoc

Abstract: EPITAXX SMF.300 EDL1300CD EDL1300CD-FC EDL1300FJ-S
Contextual Info: epitaxx inc I D E D I 3 J b U W U b UUUUU4J3 ADVANCE PRODUCT RELEASE. INFORMATION EDL1300CD -FC/EDL1300FJ-S EDL1300CD EPITAXX_ _ ED L1300CD -FC: 1300 nm Laser Diode in a- FC Receptacle EDL1300FJ-S/M : 1300 nm Laser Diode w ith an integral f ib e r

Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C

Contextual Info: Transmissive Optoswitch VTL23G2B, 23G3B Slotted Switch - Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches com bines an infrared emitting diode IR ED with a TTL compatible, Schmitt output, photo 1C detector in an opaque plastic case with

CLM185T2

Abstract: CLM285T2 CLM285Y2 CLM385N2 CLM385T2 CLM385Y2 120PV
Contextual Info: Micropower Voltage Reference Diode C Q IO Q IC CO RPO RATIO N v CLM185-2.5 / CLM285-2.5/ CLM385-2.5 FEATURES ORDERING INFORMATION • Operating C u rre n t. 20 |M - 20mA • Dynamic Im p ed an ce . 1Q

Contextual Info: Schottky Barrier Diode Twin Diode m n n . SG40TC12M o u tlin e Package ! FT 0220G Unit : mm Weight 1.54g Typ nyHB-ë-(M ) 120V 40A 4.5 Feature > T j= 1 7 5 °C ' T j= 17 5°C >3 7 JL Æ -JL / K ' Full M o ld ed • Î Ë I r =60| j A 1 L o w Ir =60| j A

rover

Abstract: J1000
Contextual Info: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.

ZENER 6.2V DO-214AC

Contextual Info: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)

Contextual Info: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/C505 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.

ip olivetti cd

Abstract: GL100MD1MP1 GL100MD1
Contextual Info: SPEC. No. ED-02157 ISSUE June 21,2002 SH A R P OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION i " DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. Specified for GL100MD1MP1 Olivetti Enclosed please find copies o f the Specifications which consists o f 14 pages including cover.

L1323

Abstract: 1323T
Contextual Info: HL1323TR Laser Diode Description H L 1323T R is a 1.3 ¿im In G aA sP laser diode with d o u b le h etero ju n ctio n structure. It is su itable as a light source in short- to interm ed iate-d istan ce fiberoptic co m m u n icatio n s sys­ te m s, e.g. L A N , C A T V and LJN.

condensateur

Contextual Info: diode biplaque [¿tsLVU g Y' 3 0 È R ed resseu r C A R A C T E R IST IQ U E S G E N E R A L E S C athode à chauffage in d irect T en sio n filam ent . Vf C ourant filam ent . If

2SC1254

Abstract: JIS C7021 B-11 led Concave RS510
Contextual Info: LED Structure, Characteristics and Operation | CHARACTERISTICS I LED BASIC STRUCTURE T h e LED Light E m itting Diode chip h as an internal P-N junction, and an electrode is provided on each surface of the chip to m ake ohm ic contact. T he P-N junction is form ed by

Contextual Info: O K I electronic components QCS30 Optical PNPN Sw itches GENERAL DESCRIPTION The OCS3 3 is an optical switch form ed by com bining a G aA s infrared light em itting diode and a silicon P N PN element that can w ithstand high voltages. The device is encased in an 8-pin plastic

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

LN66

Abstract: LN66L
Contextual Info: Infrared Light Emitting Diodes LN66L LN66(L GaAs Infrared Light Emitting Diode Unit : mm M Di ain sc te on na tin nc ue e/ d 1.0 7.65±0.2 For optical control systems Not soldered 2.25 ø5.0±0.2 Features ue pl d in an c se ed lud pl vi an m m es si tf

stetron

Contextual Info: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode

Contextual Info: OPTO DIODE CORP SSE D • bflOmfl OODDOTM 13T ■ O P D ^ d / / ' - f j > HIGH TEMPERATURE GaAIAs IR EMITTERS OD-88OLHT FEATURES • E xten d ed operating tem perature ran ge • High reliability eutectic preform die attach • No internal co atin gs • 10 0 % test for minimum p o w er requirem ent

DS0950

Abstract: ttl 400
Contextual Info: F EAT U R E S K TO C Schottky Diode SPST S SPST ED MODEL NO. DS0950 5 - 400 MHz 3 nSec 10% / 90% RF Transition 9 nSec Switching Speed 60 dB Isolation TTL Driver Non-Reflective 14 Pin DIP PART IDENTIFICATION +5V 14 .87 GND 13 GND 12 "1" CONT 11 GND 10 • GND

DIODE RK 306

Abstract: tr/DIODE RK 306
Contextual Info: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.