DIODE ED 21 Search Results

Contextual Info: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C

Contextual Info: Ordering num ber : ENN6966 Silicon Diffused-Junction Type EC2C01C iSMlYOl VCXO & VHF Band VCO Applications Varactor Diode Features Package Dimensions • High capacitance ratio. C R C l ,( V / C4.0V)=5.0typ unit : mm • Ultrasmall-si/ed packagc(i008), slim package

ZENER 6.2V DO-214AC

Contextual Info: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)

DIODE marking ED

Abstract: marking ya 71A marking GI 536 POWER 15X15 SC802-09 sc802
Contextual Info: SC802-09 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE I Features • • • • Surface mount device Lo w V f Super high speed switching High reliability by planer design -CATHOOE MARKING -SYMBOL I ED 1 14 H Applications - LOT NO.

RK105

Contextual Info: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package

6bv8

Abstract: diode 12-55 c capacitor RGF general electric RK 1900
Contextual Info: 6BV8 ET-T981 Page 1 6BV8 TUBES 12-55 DUPLEX-DIODE TRIODE DESCRIPTION AND RATING T h e 6 B V 8 is a m iniature duplex-diode m ed ium -m u triode in w hich separate cathode an d plate connections are provided for each diode section. T h e tube is intended p rim a rily for service as a com bined syn ch ron ou s detector and

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

rover

Abstract: J1000
Contextual Info: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.

1LD5

Abstract: newark electronic tube Scans-0017346
Contextual Info: ILD5 TUNG-SOL 's DIODE PENTODE THE 1 L D 5 I S A D IO D E -A U D 1 0 PENTODE D ES IG N ED E S P E C I A L L Y FOR S E R V I C E AS A COMBINED DIODE DETECTOR AND PENTODE AUDIO A M P L I F I E R . THE DIODE PL A TE I S LOCATED AT THE NEGATIVE END OF THE F IL A M E N T .

LG direct drive motor

Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Contextual Info: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W

DIODE RK 306

Abstract: tr/DIODE RK 306
Contextual Info: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.

X9522

Abstract: X9522V20I-A X9522V20I-B X9522V20IZ-A X9522V20IZ-B
Contextual Info: I GNS DE S W E T OR N DUC ED F TE PRO 9520 D N TITU 2329, X MME ECO E SUBS ISData L2 Sheet R T 26, NO I BL 3 S 2 S 2 PO SL 20, I X958 X9522 Laser Diode Control for Fiber Optic Modules January 3, 2006 FN8208.1 DESCRIPTION Triple DCP, Dual Voltage Monitors

1N 3000 DIODE

Abstract: 14R7 Scans-0017298 general electric
Contextual Info: 14R7 14R.7 PAGE I Description and Rating DUPLEX-DIODE PENTODE GENERAL DESCRIPTION Pr i n c i p a l Application: semi-remote-cutoff combined fi er detector, The I4R7 pentode for us e as a automatic-voIume-controI and audio amplifier. a l s o be us ed as a r a d i o - f r e q u e n c y or i n t e r m ed ia te f r e q u e n c y a m p l i f i e r . Th e tube fe at ur es low co upling

12sR7

Abstract: 12sr7, tube 500 watts audio amplifier diagram 12sr7 tube rs tube Scans-0017290
Contextual Info: 12SR7 PAGE I 12SR7 Description and Rating DUPLEX-DIODE TRIODE GENERAL DESCRIPTION Pr in ci pa l A p p l i c a t i o n : Th e ty pe I2SR7 is a d u p l e x diode medi um -m u triode ampl if ie rdesi gn ed for use as a c o m b i n e d d e t e c t o r , a u d i o a m p l i f i e r ,

Contextual Info: VER PF -’ - F l . O P E B 32EI FEATURES • Up to 1.25Gb/s operation ■ 75mA peak drive current ■ Separate modulation control ■ Separate master reset for laser safety T he S Y 1 0 0 E L 1 0 0 1 is a high sp e ed current so u rce for driving a sem iconductor lase r diode in optical transm ission

MIL-STD-1276

Abstract: VS-100 kovar 107D 204C 213B VS100
Contextual Info: VS-100 High Speed Wideband RF Switch 2-500 MHz SP2T L4RIL T h e V S -100 is a m in ia tu re high perform ance RF S ch o ttky diode sv/itch w ith inte rna l d rivers and internal 50 o h m term in atio ns. T his sw itch e xh ib its high spe ed sw itching, lo w sw itch ing

C50AX6G

Abstract: 350VOLTS
Contextual Info: TENTATIVE DATA C50 a x 6 g 6 A X 6 G TUMGSOL DOUBLE DIODE COATED UN I POTENTIAL CATHODE HEATER 6 .3 VOLTS 2 .5 AMP. AC OR DC ANY MOUNTING POSITION BOTTOM VIEW ME DI U M S H E L L 7 P IN OCTAL THE 6 a x 6G IS A FU LL-W AVE HIGH VACUUM R E C T I F IE R D ESIG N ED FOR DAMPER

Contextual Info: niCRO PAC IN D U ST R IE S 42E IN C D b l l 2 b 4 G OOOCHOb H 1 B MPI GaAs LIGHT-EMITTING DIODE “PIGTAIL’ 62017 TYPE G S 3040 * HIGH INTENSITY G aA IA s VER SIO N A V A IL A B L E M i-U MINIATURE HIGH EFFICIEN C Y LED WITH N AR RO W BEAM A N G LE G LA S S/M E TA L W ELD ED P A C K A G E

chn 702

Abstract: chn 090 LMSW43LA-215 VC-2R diode fr 207
Contextual Info: Microwave Modules RF Diode Switches RF Diode SW with Integrated LPF 1.8+0 2 0 . 7 t0 2 r o l 2 (3) U U U - □ n r \ M a n ufa ctu re r's N am e Code (1 ) : R x (2)(4)(8) . GN D (3) : Tx (5) : Vc1 (6) : ANT (7) : Vc2 i r a 0 351:0.2 1 .2 7 *0 1 LMSW43LA-215

Contextual Info: 25.4mm 1.0INCH SINGLE DIGIT NUMERIC DISPLAYS SA10-11EWA/GWA/YWA/SRWA SC10-11EWA/GWA/YWA/SRWA SA10-21EWA/GWA/YWA/SRWA SC10-21EWA/GWA/YWA/SRWA Features Description !1.0 INCH DIGIT HEIGHT. The Green source color devices are made with Gallium !LOW CURRENT OPERATION.

IHD 680 AI

Abstract: Zen Research IN4007 CH1 3W Ihd 680 an
Contextual Info: CONCEPT IHD 215/ 280/ 680 Data Sheet& A pplicatbn M a n u a l Intelligent Half-Bridge Drivers ib r E BTs and Pow erM 0 SEETs Description H ie in te llig e n t h a lf-b r id g e d riv e rs of th e IH D ty p e series h a v e been d e v e lo p e d specifically fo r th e reli­

CA56-12SRWA

Abstract: CA56-11EWA CA56-12EWA KDA0343 CC56-12GWA CA56-12 CC56-12SRWA CC56-21SRWA
Contextual Info: 14.22mm 0.56INCH FOUR DIGIT NUMERIC DISPLAYS CA56-11EWA/GWA/YWA/SRWA CC56-11EWA/GWA/YWA/SRWA CA56-12EWA/GWA/YWA/SRWA CC56-12EWA/GWA/YWA/SRWA CA56-21EWA/GWA/YWA/SRWA CC56-21EWA/GWA/YWA/SRWA Features Description z0.56 INCH DIGIT HEIGHT. The High Efficiency Red source color devices are made with

12SRWA

Abstract: CA56-21SRWA SRWA CA56-11EWA CA56-12EWA CA56-12SRWA CA-56-11 CA56-21EWA
Contextual Info: 14.22mm 0.56INCH FOUR DIGIT NUMERIC DISPLAYS CA56-11EWA/SRWA/YWA/GWA CC56-11EWA/SRWA/YWA/GWA CA56-12EWA/SRWA/YWA/GWA CC56-12EWA/SRWA/YWA/GWA CA56-21EWA/SRWA/YWA/GWA CC56-21EWA/SRWA/YWA/GWA Features Description !0.56 INCH DIGIT HEIGHT. The High Efficiency Red source color devices are made

N13001

Contextual Info: I Ordering number : ENN6862~| N-Channel Silicon MOSFET CPH3414 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2152 A Specifications Absolute Maximum Ratings at Ta=25°C