DIODE E2 Search Results

biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power

Contextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for

FFPF60B150DS

Contextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for

Contextual Info: FFAF60A150DS FFAF60A150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-3PF Applications 1 2 3 Modulation Damper • Modulation + Damper diode designed for

Contextual Info: Comchip Zener Diode SMD Diode Specialist 1N5221B-G Thru. 1N5267B-G N5 Voltage: 2.4 to 75 Volts Power: 0.5 Watts RoHS Device Features DO-35 -Silicon planar power Zener diode. -The Zener voltages are graded according to the international E24 standard, smaller voltage

C1060

Abstract: bookham diode 2 Wavelength Laser Diode C1060 Series b60c Nd-yag B60C-1060-01 emitter "1060 nm"
Contextual Info: Data Sheet Preliminary 60W 10xxnm High Power Bare Laser Diode Bar B60C-10xx-01 The Bookham B60C-10xx-01 50% fill factor laser diode bar has been designed to provide the increased brightness and reliability required for direct diode applications and as replacement for Nd:YAG lasers. The proprietary E2 front mirror

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

Diode Motorola 711 2N2905A

Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

Aspheric Lens TO Can

Abstract: 310-0065-780 305-0065-780 336 305 336-0808-830 lens laser diode HL6312G 785nm 780nm laser diode 300-0355-780
Contextual Info: Optima Laser Diode Optics Cost Effective Lenses for Collimating and Focusing Laser Diodes Collimating and focusing a laser diode is perhaps the most critical prerequisite in any laser diode application. While the characteristics of a laser diode might be ideal for your

OL3200N-5

Abstract: laserdiode m 140
Contextual Info: E2V0014-37-X1 ¡ electronic components OL3200N-5 LASER DIODES OL3200N-5 1.3 mm High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL3200N-5 is a 1.3 mm, high-power laser diode DIP module with a single-mode fiber pigtail. The high-performance OKI laser diode achieved a single-mode fiber output of over 5 mW.

OL3200N-5

Contextual Info: E2V0014-37-X1 O K I electronic components QL3200N-5_ 1.3 High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL3200N-5 is a 1.3 high-pow er laser diode DIP m odule w ith a single-m ode fiber pigtail. The high-perform ance OKI laser diode achieved a single-m ode fiber output of over 5 mW.

Contextual Info: E2V0014-37-X1 O K I electronic components OL32QON-5_ 1.3 jim High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL3200N-5 is a 1.3 J im , high-power laser diode DIP module with a single-mode fiber pigtail. The high-performance OKI laser diode achieved a single-mode fiber output of over 5 mW.

DIODE A6 sod110

Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Contextual Info: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation

te555

Abstract: 808nm LAR23P400
Contextual Info: 808nm 400W QCW Lensed Laser Diode Array Part Number: LAR23P400 E2 PACKAGE • Packaged 13-Bar Lensed Laser Diode Array · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS

Contextual Info: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. POLARITY L2 E F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)

laser diode array

Abstract: LAR23P400
Contextual Info: Industrial Microphotonics Company 808nm 400W QCW Lensed Laser Diode Array Part Number: LAR23P400 E2 PACKAGE • Packaged 13-Bar Lensed Laser Diode Array · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS ELECTRICAL

E25A2CPR

Abstract: E25A2CPS
Contextual Info: SEMICONDUCTOR E25A2CPS, E25A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES ᴌAverage Forward Current : IO=25A. ᴌReverse Voltage : 200V Min. E POLARITY L2 F1 E25A2CPS (+ Type) B L1 G E25A2CPR (- Type)

500W

Abstract: LAR23P500
Contextual Info: 940nm 500W QCW Lensed Laser Diode Array Part Number: LAR23P500 E2 PACKAGE • Packaged 13-Bar Lensed Laser Diode Array · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS

LAR23P500

Abstract: australia heat sink b1099
Contextual Info: Industrial Microphotonics Company 500W QCW Lensed Laser Diode Array Part Number: LAR23P500 E2 PACKAGE • Packaged 13-Bar Lensed Laser Diode Array · Available Wavelengths 785-1064nm · Other Powers Are Also Available OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS

H24 SMD DIODE

Abstract: electrical circuit diagram reverse forward move d 12v bulb 220 supply diagram
Contextual Info: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.

electrical circuit diagram reverse forward move d

Abstract: H24 SMD DIODE
Contextual Info: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.

Alternator Diode

Contextual Info: SEMICONDUCTOR E25A2CS, E25A2CR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. A3 A2 FEATURES A1 D3 B1 B2 D2 Repetitive Peak Reverse Voltage : VRRM=200V. D1 Average Forward Current : IF AV =25A. E30A2CS (+ Type) C1

electrical circuit diagram reverse forward move d

Abstract: H24 SMD DIODE
Contextual Info: Low Power Loss ORing Diode Module BID Series This is a low power loss ORing diode device that eliminates the need for a Schottky diode. With the voltage detection between terminals of its built-in MOS-FET, it is turned ON for forward voltage and OFF for reverse voltage like a diode.