DIODE E 20C Search Results

1N1743

Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:

20CS04FM

Contextual Info: SEC 20A SHOTTKY BARRIER DIODE MODULE aHn N "m 20CS04FM OUTLINE DRAWING UNIT: mm 20CS04FM is a isolated type shottkey barrier diode centertap module o f w hich o u tp u t current is 20A. FEATURES * Low forw ard voltage drop. * Very fast recovery tim e. Isolated type.

20CS04M

Abstract: 20A shottky diode
Contextual Info: NEC 20A SHOTTKY BARRIER DIODE MODULE ELECTHO« DEVICE 20CS04M 20CS04M is a s h o ttk y barrier diode centertap module o f w hich o u tp u t current is 20A. OUTLINE DRAWING Unit: mm FEATURES • Low forw ard voltage drop. • • V ery fast recovery tim e.

gyrator

Abstract: stabiliser circuit diagram preamplifier AGC remote MV601 SL486 3055-1
Contextual Info: GEC P L E S S E Y I S E M I C O N D U C T O R S ! 3055-1.0 SL486 INFRA RED REMOTE CONTROL PREAMPLIFIER The SL486 is a high gain preamplifier designed to form an interface between an infra-red receiving diode and the digital input of remote control receiving circuits. The device

RK-71

Contextual Info: Bulletin 127132 rev. D 09/97 International lO R Rectifier i r k .71 .91 s e r i e s THYRISTOR/DIODE and NEWADD-A-pak Power Modules , THYRISTOR/THYRISTOR Features • Electrically isolated: DBC base plate ■ 3500 V RMg isolating voltage I Standard JED EC package

Contextual Info: Bulletin 12066 rev. B 09/94 International i ö r Rectifier SD303C.C FAST RECOVERY DIODES s e r ie s Hockey Puk Version Features • High power FAST recovery diode series ■ 1.0 to 2.0 fis recovery tim e ■ High voltage ratings up to 2500V ■ High current ca pability

2N2222 motorola

Abstract: RECTIFIER DIODES Motorola
Contextual Info: MOTOROLA Order this document by MBRF1045/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S ch o ttky Pow er R e c tifie r M BRF1045 The S W IT C H M O D E Power Rectifier employs the Schottky Barrier principle in a large area m etal-to-silico n power diode. S ta te -o f-th e -a rt geom etry features

westcode sw

Contextual Info: WESTCODE SEMICONDUCTORS £^ d*c« Capsule Rectifier Diode C o n s is ts o f a d iffu s e d s ilic o n e le m e n t m o u n te d in a n h e rm e tic c e ra m ic c o ld w e ld e d c a p s u le . A v a ila b le in in d u s try s ta n d a rd a n d th in h o u s in g s .

B85 diode

Abstract: DIODE B89 IRGPC50KD2
Contextual Info: 09/01/94 1 1 ;IS i 57 I n t e r n a t 'I R e c tifie r - > Product In fo rn ai ion Page 002 P D - 9.1123 International S Rectifier IRGPC50KD2 Short Circuit Rated UHraFasl CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFASI SOF T RECOVERY DIODE Features

Siemens MTT 40 A 12 N

Abstract: Siemens MTT 65 A 12 N diode 1gw siemens SFH nm Siemens MTT SFH487 RJ31 CFRH
Contextual Info: SIEMENS JnAiGaAs-Laser Diode 1000 mW with FC-connector 750 mW 2 SFH 487401 SFH 487406 F e a tu re s * Monochromatic coherent radiafcon source for pulse and cw-opeiation • MOCVD ¡quantum-well s t r u c k . strainer layer iechnt>loyy * S m all s ize p ackag e tor etfic.erti Jt>ermal coupling

60HQ100

Abstract: JANTX1N6392
Contextual Info: International Government and Space liQ R lR e c t i f i e r Schottky Diode Hermetic Packages 8-60 Amps Case Part Number VRRM V 'F(AV) @ (A) Tc •f (AV) @ t c VFM @ >FM 25°C(V) (C) Outline !r M @ v RWM 25°C(mA) Max. Tj Number (1) 5EQ100 8EQ045 100 45 8

647c

Abstract: DBA20E DBA20 DBA20B DBA20C Scans-0093209
Contextual Info: Ordering number : EN647C _ D B A 20 N 0.647C SA\YO D iffused J u n c t i o n T y p e Silicon Diode 2.0A Single-Phase Bridge Rectifier I F e a tu re s • P la s tic m olded s tr u c t u r e • G la ss p a s s iv a ti o n for hig h re lia b il ity

M54581P

Contextual Info: M IT S U B IS H I BIPOLAR DIGITAL ICs ! M54581P 8 -U N IT SOOmA SOURCE T Y P E DARLINGTON TR A N S ISTO R ARRAY W IT H C L A M P DIODE DESCRIPTION PIN CONFIGURATION TOP VIEW rh e M 5 4 5 8 1 P , 8 -c h a n n e l source driver, consists of 8 NPN and 8 P N P source ty p e darlington transistors co n n ec te d to

UCU20C16

Abstract: CK200 NIHON PULSE
Contextual Info: # y 20A 160V 30ns F^^E-y Fast Recovery Cathode common Similar to TO-263 UCU20C16 Nihon Inter Electronics Corporation Specification. mm izmmyy =*yv'i Diffusion Type Silicon Diode Application High Frequency Rectification Ü x ^ Æ .fê ' frd MAXIMUM RATINGS Ta=25°C: Unless otherwise specified

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

Contextual Info: Bulletin 12030/A International Rectifier 45L r .d s e r ie s STANDARD RECOVERY DIODES Stud Version Features 150A • Diffused diode ■ High current carrying capability ■ High voltage ratings up to 1 6 00V ■ High surge current capabilities ■ Stud cathode and stud anode version

FU-29

Abstract: LA1175 L4 95 Mitsumi FM OSC LA1174 3SK181 Mitsumi AM coil ift Mitsumi D0994 IC LA1175
Contextual Info: Ordering number:EN 227 6B Monolithic Linear 1C L A 1 1 7 5, 1 1 7 5 FM F r o n t End for Ca r Ra d i o , Home St e r e o A p p l i c a t i o n s Functions . Double-balanced type MIX, PIN diode drive AGC output, MOS FET gate drive AGC output, keyed AGC, differential IF amplifier, buffer amplifier for

M54630P

Abstract: M54630 n type laser diode APC RS 800 m5463 66515FP M54977 54975P M66515FP 16P2N
Contextual Info: lAPPLICATION SPECIFIC IC CONTINUED Function Tyjse No. Packase Outiire WttfKXM Features • U sag e /F ie ld • Includes self APC c irc u it N -type Laser diode d rive r with M 66515FP self APC function 20P 2N -A H igh­ speed Bip • H igh-speed sw itching 40M bps

3N60A4D

Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688
Contextual Info: HGT1S3N60A4DS, HGTP3N60A4D in t e r r i i J a n u a ry . D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices

RLT430-50CMG

Contextual Info: RLT430-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT430-50CMG is an Violet Laser Diode emitting at 430 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol

RLT390-50CMG

Contextual Info: RLT390-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT390-50CMG is an Violet Laser Diode emitting at 390 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol

RLT395-50CMG

Contextual Info: RLT395-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT395-50CMG is an Violet Laser Diode emitting at 395 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol

RLT405-50CMG

Contextual Info: RLT405-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT405-50CMG is an Violet Laser Diode emitting at 405 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol

RLT410-50CMG

Contextual Info: RLT410-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT410-50CMG is an Violet Laser Diode emitting at 410 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol