DIODE DR 25 Search Results

Contextual Info: SKiiP 12NAB065V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper K<DR .< .<1Y K/DR -* P HG Q<M 45%7* 2&97'8:*7 *B7?: :76 -* P HG UVSW Q< -[ Diode - Inverter, Chopper MiniSKiiP 1 3-phase bridge rectifier +

BAR66

Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Contextual Info: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode

dr25 diode specifications

Abstract: DR25 Diode OP 741 L6690 free download led wiring guide LLD1002E01
Contextual Info: INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 1.0 1.5 2.0 2.5 40 20 830 3.0 ●High duty ratio (DR≦2.5%)

Laser Diode for cutting

Contextual Info: INFRARED PULSED LASER DIODE L6690 PRELIMINARY DATA FEATURES High duty ratio DR 2.5 % High speed rise time (tr=0.5 ns typ.) APPLICATIONS Laser rader Range finder Excitation light source Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)

mss60.341

Abstract: n10 diode N092 SCHOTTKY DIODE BRIDGE mss60 Diode DR 25 PCR46 dr 25 diode MSS25 MSS40
Contextual Info: Spice Models for Metelics Schottky Diodes 1 of 6 The standard diode model found in Spice Ver 2 does not correctly model the reverse bias characteristics of Metelics’ Schottky diodes. To correct this problem, use the macromodel shown below. DR Anode Cathode

Contextual Info: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)

Contextual Info: INFRARED PULSED LASER DIODE L6690-53 PRELIMINARY DATA FEATURES High speed rise time tr 2 ns typ. Output Power : 10 W (at DR=0.05 %) MTTF 20000hrs Compact APPLICATIONS Laser rader Range finder Optical trigger Security barrier Figure 1: Dimensional Outline (Unit: mm)

Contextual Info: 55 Commerce Way Woburn, MA 01801 781 935 - 4442 (781) 938 - 5867 www.gilway.com GHB-PLCC-DR Features Description !SINGLE COLOR. The Super Bright Red source color devices are made with !SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER Gallium Aluminum Arsenide Red Light Emitting Diode.

zener spice model

Contextual Info: DE3S062D Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DE3S062D Product type: Zener Diode 3 1 2 Parameters * cathode1 * | anode1, anode2 * | | cathode2 * | *$ .SUBCKT DE3S062D 1 3 2 D11 3 2 DF D12 2 p DR V1 p 3 0.002 D21 3 1 DF

Hitachi DSA002759

Contextual Info: 2SK3082 L ,2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 10 A 40 A 10 A 10 A 8.5 mJ 30 W Drain peak current I D(pulse) Note1 Body-drain diode reverse drain current I DR

DS0352

Contextual Info: witches 40E D DAICO I N DU ST RIE S INC SbOH TS G 00015^7 & TOT IDAI T - s i - Volume 2 Issue 2 SP2TPin Diode Switch Model No. DS0352 OPERATING CHARACTERISTICS CU RR EN T DR AI N 15 25 TYPICAL PERFORMANCE mA A T +5 VDC SUPPLY INTE RC EP T POINT, 2ND +72 d 8m

DZ2J100

Contextual Info: DZ2J100 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2J100 Product type: Zener Diode Parameters *DEVICE=DZ2J100,D * DZ2J100 D model *$ .SUBCKT DZ2J100 A K D1 A K DF DZ K 1 DR V1 1 A 0.01 .MODEL DF D + IS=1.1985E-15 + N=1.025

DZ2S068

Abstract: DZ2S Diode DR 25
Contextual Info: DZ2S068 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2S068 Product type: Zener Diode Parameters *DEVICE=DZ2S068,D * DZ2S068 D model *$ .SUBCKT DZ2S068 A K D1 A K DF DZ K 1 DR V1 1 A 0.002 .MODEL DF D + IS=1.3073E-15 + N=1.0628

Contextual Info: STV7617D STV7617U PLASMA D SPLAY PANEL SCAN DR VER PRELIM IN ARY DATA • 64/65 SELECTABLE OUTPUT PLASMA DIS­ PLAYDRIVER ■ 100V ABSOLUTE MAXIMUM SUPPLY ■ 5V SUPPLY FOR LOGIC ■ 100/700mASOURCE/SINK OUTPUT ■ 700mASOURCE/SINK OUTPUT DIODE ■ 65-BIT BIDIRECTIONAL SHIFT REGISTER

DZ2J030

Abstract: dr 25 diode
Contextual Info: DZ2J030 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2J030 Product type: Zener Diode Parameters *DEVICE=DZ2J030,D * DZ2J030 D model *$ .SUBCKT DZ2J030 A K D1 A K DF DZ K 1 DR V1 1 A 0.002 .MODEL DF D + IS=1.2641E-15 + N=1.0575

Contextual Info: y a .y h dr/s: lj K Surface Mounting^Deviœ Schottky Barrier Diode Twin Diode •W fêvhÆ E ] DF30PC3M OUTLINE DIMENSIONS Case : STO-220 30V 30A •S M D • ¡B ffiV F = 0 .4 V m ffl i î • A '> x U - i ï S K ± • D C tÜ ^ O R ffl • D C / D C n v A — 5>

Contextual Info: FEATURES MODEL NO. DS0506 dr • 100-600 MHz ■ 0.6 dB Insertion Loss ■ Handles +25 dBm PIN Diode SP6T ■ 250 nSec Switching Speed ■ Non-Reflective ■ TTL Driver ■ 38 Pin DIP PART IDENTIFICATIO N L ^ 2 0 V T 018 DIA LEAD 2 6 CONT1 ! " 0" 14 3 1 5 7 8 9 11 12 1315 19

1SV212

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV212 U nit in mm V C O FOR UHF B A N D R A D IO T3i±i +a 2 5 • • 1.5-<11 5 U ltra Low Series Resistance: rs = 0.2il Typ. Useful for Small Size Set z S 1 J . !. 7=_ dr M A X IM U M RATIN G S (Ta = 25°C)

GEC Marconi Materials Technology

Abstract: 2-18ghz P35-5100-0 diode DB 3 C
Contextual Info: FEATURES MODEL NO. P35-5100-0 dr • Cascode Configuration ■ 0.25 |^m HEMT Technology ■ 10 dB Gain GaAs MMIC LNA ■ <4dB Noise Figure 2-18GHz ■ <4.5dB Noise Figure 18-20GHz ■ AGC Control With Gate Bias ■ -55°C to +85°C Operation ■ Temperature Sensing Diode Included On Chip

DS0950

Contextual Info: FEATURES • 5 -4 0 0 MHz ■ 3 nSec 10% / 90% RF Transition ■ 9 nSec Switching Speed SPST MODEL NO. DS0950 dr & Schottky Diode SPST ■ 60 dB Isolation ■ TTL Driver -o'a7 4 - ■ Non-Reflective ■ 14 Pin DIP GND 12 RF IN/OUT CONT 11 GND 10 GND 9 GND

Contextual Info: FEATU RES • 50 m A ,+5 VDC ■ +40 dBm 3rd Order Intercept PIN Diode 6 Section Attenuator ■ 1 dB LSB, 63 dB Range 6 BIT MODEL NO. DA0844 dr ■ 3 0 -5 0 0 MHz ■ TTL Control -, xCT <s* ■ 38 Pin DIP PART ID E N T IF IC A T IO N RF IN/OUT 38 G N D _

6AL5

Abstract: RL 1962 h 48 diode
Contextual Info: 5726 - TUNB-SOi — DOUBLE DIODE MINIATURE TYPE COATED UN IPOTENTIAL CATHODE HEATER 6.3 VOLTS 300 MA. AC OR DC ANY MOUNTING POSITION BASING 0 tAG RAM JEDEC 6BT SM A L L B U T T O N M I N I A T U R E 7 PIN B A SE E7-1 O U T L I N E DR AW IN G O E D E C 5-1

DS0613

Contextual Info: FEA TU RES • TTL Driver SP2T MODEL NO. DS0613 dr ■ 5-2000 MHz ■ Low Cost ■ 14 Pin DIP PIN Diode SP2T .87 PART ID E N T IF IC A T IO N r I "0 " CO N TRO L GND 14 13 .20 RF COM 11 GND 12 G ND 10 N/C 9 +9V TO +15V 8 .22 V .018 D iA L E A D RF 1 GND GND

IFND89

Contextual Info: 04/2009 B-XX IFND89 N-Channel JFET with Integrated Back to Back Diodes PACKAGE: Absolute maximum ratings at TA = 25°C Reverse Gate Source & Gate Drain Voltage Gate Current, IG Continuous Device Power Dissipation Power Derating Operating Junction Temperature, TJ