DIODE DEVICE DATA ON SEMICONDUCTOR Search Results
DIODE DEVICE DATA ON SEMICONDUCTOR Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| EP1800ILC-70 |
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EP1800 - Classic Family EPLD |
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| EP1800GM-75/B |
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EP1800 - Classic Family EPLD |
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| AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| CA3140AT/B |
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CA3140 - Operational Amplifier, 1 Func, 15000uV Offset-Max, BIMOS |
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DIODE DEVICE DATA ON SEMICONDUCTOR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SchottkyContextual Info: RB551V-40 Taiwan Semiconductor Small Signal Product Schottky Barrier Diode FEATURES - Surface Mount Device Type - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on packing code and prefix "G" on date code SOD-323 MECHANICAL DATA |
Original |
RB551V-40 OD-323 OD-323 MIL-STD-202, C/10s RB551V-40) S1402011 Schottky | |
marking UMContextual Info: VEC2315 Ordering number : EN8699 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFETs VEC2315 General-Purpose Switching Device Applications Features • • • • • ON-resistance RDS on 1=105mΩ(typ.) 4V drive High-density mounting Protection diode in |
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EN8699 VEC2315 PW10s, 900mm2 marking UM | |
A1767
Abstract: MCH3481
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ENA1767 MCH3481 PW10s, 900mm2 019A-003 MCH3481-TL-H A1767-7/7 A1767 MCH3481 | |
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Contextual Info: FW217A Ordering number : EN8994A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW217A General-Purpose Switching Device Applications Features • • • • On-state resistance RDS on 1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in |
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EN8994A FW217A PW10s) 2000mm2 PW10s 35vement, | |
ATP113Contextual Info: ATP113 Ordering number : ENA1755A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=2400pF(typ.) |
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ENA1755A ATP113 2400pF PW10s) PW10s, A1755-7/7 ATP113 | |
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Contextual Info: ATP218 Ordering number : EN8970A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP218 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=2.9mΩ(typ.) 2.5V drive Protection diode in Input Capacitance Ciss=6600pF(typ.) |
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ATP218 EN8970A 6600pF | |
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Contextual Info: FW217A Ordering number : EN8994 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW217A General-Purpose Switching Device Applications Features • • • • On-state resistance RDS on 1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in |
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EN8994 FW217A PW10s) 2000mm2 PW10s | |
MCH6662Contextual Info: MCH6662 Ordering number : EN8999 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6662 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=120mΩ(typ.) 1.8V drive Halogen free compliance Protection diode in |
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EN8999 MCH6662 PW10s, 900mm2 022A-006 MCH6662 | |
MCH3383Contextual Info: MCH3383 Ordering number : EN9000A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3383 Low Voltage Drive Switching Device Applications Features • • • • ON-resistance RDS on 1=57mΩ (typ.) 0.9V drive Halogen free compliance Protection diode in |
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EN9000A MCH3383 PW10s, 900mm2 MCH3383 | |
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Contextual Info: ECH8654 Ordering number : ENA0981A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8654 General-Purpose Switching Device Applications Features • • Low ON-resistance Halogen free compliance • • 1.8V drive Protection diode in Specifications |
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ENA0981A ECH8654 PW10s, 900mm2 A0981-7/7 | |
A1429
Abstract: 95A MARKING
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ENA1429A ECH8320 PW10s, 900mm2 011A-002 ECH8320-TL-H A1429-7/7 A1429 95A MARKING | |
marking WZContextual Info: ECH8654 Ordering number : ENA0981B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8654 General-Purpose Switching Device Applications Features • • Low ON-resistance Halogen free compliance • • 1.8V drive Protection diode in Specifications |
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ENA0981B ECH8654 PW10s, 900mm2 A0981-7/7 marking WZ | |
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Contextual Info: ATP212 Ordering number : ENA1507A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP212 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in |
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ATP212 ENA1507A A1507-7/7 | |
1N4148Contextual Info: LITE-ON SEMICONDUCTOR 1N4148 REVERSE VOLTAGE - 100 V POWER DISSIPATION - 500 mW FAST SWITCHING DIODE DO-35 FEATURES Fast Switching Device Trr < 4.0 nS Hermetically Sealed Glass Compression Bonded Construction Low leakage current MECHANICAL DATA DO-35 Dim. |
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1N4148 DO-35 DO-35 135mg Jan-2008, KDYD01 300us 1N4148 | |
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a1870
Abstract: a1870 fet marking a1870 FW513 TC-00002515
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ENA1870 FW513 PW10s, 1000mm2 A1870-5/5 a1870 a1870 fet marking a1870 FW513 TC-00002515 | |
ech8 pattern
Abstract: ECH8651R ECH8651R-TL-H ECH8651 A10105
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ENA1010A ECH8651R PW10s, 900mm2 A1010-7/7 ech8 pattern ECH8651R ECH8651R-TL-H ECH8651 A10105 | |
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Contextual Info: APPLICATION NOTES Data Display Products What is an LED? A light-emitting diode LED is a solid-state semiconductor device that converts electrical energy directly into light. On its most basic level, the semiconductor is comprised of two regions. The p-region contains positive electrical charges while the n-region contains negative electrical |
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MIL-STD-1686) | |
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Contextual Info: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM |
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MTB50P03HDL/D MTB50P03HDL MTB50P03HDL/D* | |
F7N02Z
Abstract: D7N02
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OCR Scan |
MMDF7N02Z/D F7N02Z D7N02 | |
S5P02HContextual Info: MOTOROLA Order this document by MMSF5P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 5P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8.7 AMPERES |
OCR Scan |
MMSF5P02HD/D S5P02H | |
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Contextual Info: MOTOROLA Order this document by MMDF4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 85 m fi |
OCR Scan |
MMDF4P03HD/D | |
supper mosfets
Abstract: k 351 transistor
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OCR Scan |
MTD20N03HDUD 2PHX43416 MTD20N03HDL/D supper mosfets k 351 transistor | |
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Contextual Info: M OTOROLA Order this document by MMDF6N03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 6N 03H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 35 |
OCR Scan |
MMDF6N03HD/D | |
AN569
Abstract: D3N02 MMDF3N02HD MMDF3N02HDR2 SMD310
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MMDF3N02HD/D MMDF3N02HD MMDF3N02HD/D* AN569 D3N02 MMDF3N02HD MMDF3N02HDR2 SMD310 | |