DIODE DEVICE DATA ON SEMICONDUCTOR Search Results

Schottky

Contextual Info: RB551V-40 Taiwan Semiconductor Small Signal Product Schottky Barrier Diode FEATURES - Surface Mount Device Type - Pb free and RoHS compliant - Green compound Halogen free with suffix "G" on packing code and prefix "G" on date code SOD-323 MECHANICAL DATA

marking UM

Contextual Info: VEC2315 Ordering number : EN8699 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFETs VEC2315 General-Purpose Switching Device Applications Features • • • • • ON-resistance RDS on 1=105mΩ(typ.) 4V drive High-density mounting Protection diode in

A1767

Abstract: MCH3481
Contextual Info: MCH3481 Ordering number : ENA1767 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3481 Low Votage Drive Switching Device Applications Features • • ON-resistance RDS on 1=80mΩ (typ.) Halogen free compliance • • 1.2V drive Protection diode in

Contextual Info: FW217A Ordering number : EN8994A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW217A General-Purpose Switching Device Applications Features • • • • On-state resistance RDS on 1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in

ATP113

Contextual Info: ATP113 Ordering number : ENA1755A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=2400pF(typ.)

Contextual Info: ATP218 Ordering number : EN8970A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP218 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=2.9mΩ(typ.) 2.5V drive Protection diode in Input Capacitance Ciss=6600pF(typ.)

Contextual Info: FW217A Ordering number : EN8994 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW217A General-Purpose Switching Device Applications Features • • • • On-state resistance RDS on 1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in

MCH6662

Contextual Info: MCH6662 Ordering number : EN8999 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6662 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=120mΩ(typ.) 1.8V drive Halogen free compliance Protection diode in

MCH3383

Contextual Info: MCH3383 Ordering number : EN9000A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH3383 Low Voltage Drive Switching Device Applications Features • • • • ON-resistance RDS on 1=57mΩ (typ.) 0.9V drive Halogen free compliance Protection diode in

Contextual Info: ECH8654 Ordering number : ENA0981A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8654 General-Purpose Switching Device Applications Features • • Low ON-resistance Halogen free compliance • • 1.8V drive Protection diode in Specifications

A1429

Abstract: 95A MARKING
Contextual Info: ECH8320 Ordering number : ENA1429A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8320 General-Purpose Switching Device Applications Features • • • • Low ON-resistance 1.8V drive Halogen free compliance Protection diode in Specifications

marking WZ

Contextual Info: ECH8654 Ordering number : ENA0981B SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8654 General-Purpose Switching Device Applications Features • • Low ON-resistance Halogen free compliance • • 1.8V drive Protection diode in Specifications

Contextual Info: ATP212 Ordering number : ENA1507A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP212 General-Purpose Switching Device Applications Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in

1N4148

Contextual Info: LITE-ON SEMICONDUCTOR 1N4148 REVERSE VOLTAGE - 100 V POWER DISSIPATION - 500 mW FAST SWITCHING DIODE DO-35 FEATURES Fast Switching Device Trr < 4.0 nS Hermetically Sealed Glass Compression Bonded Construction Low leakage current MECHANICAL DATA DO-35 Dim.

a1870

Abstract: a1870 fet marking a1870 FW513 TC-00002515
Contextual Info: FW513 Ordering number : ENA1870 SANYO Semiconductors DATA SHEET MOSFET : N-Channel Silicon MOSFET FRD : Ultrahigh-Speed Switching Diode FW513 General-Purpose Switching Device Applications Features • • • FET RDS on =5.8Ω (typ.), 10V drive FRD VF=1.1V (typ.), trr=40ns (typ.)

ech8 pattern

Abstract: ECH8651R ECH8651R-TL-H ECH8651 A10105
Contextual Info: ECH8651R Ordering number : ENA1010A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8651R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

Contextual Info: APPLICATION NOTES Data Display Products What is an LED? A light-emitting diode LED is a solid-state semiconductor device that converts electrical energy directly into light. On its most basic level, the semiconductor is comprised of two regions. The p-region contains positive electrical charges while the n-region contains negative electrical

Contextual Info: MOTOROLA Order this document by MTB50P03HDL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB50P03HDL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM

F7N02Z

Abstract: D7N02
Contextual Info: MOTOROLA Order this document by MMDF7N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 7N 02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel w ith Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET 7.0 AMPERES

S5P02H

Contextual Info: MOTOROLA Order this document by MMSF5P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 5P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8.7 AMPERES

Contextual Info: MOTOROLA Order this document by MMDF4P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F4P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 85 m fi

supper mosfets

Abstract: k 351 transistor
Contextual Info: MOTOROLA Order this document by MTD20N03HDUD SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD20N03HDL HDTMOS E-FET™ High Density Pow er FET DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand

Contextual Info: M OTOROLA Order this document by MMDF6N03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 6N 03H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 35

AN569

Abstract: D3N02 MMDF3N02HD MMDF3N02HDR2 SMD310
Contextual Info: MOTOROLA Order this document by MMDF3N02HD/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMDF3N02HD Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors Motorola Preferred Device DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS