DIODE DB4 Search Results
DIODE DB4 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE DB4 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
1N4007 ZENER DIODE
Abstract: diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v
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OCR Scan |
1n40011n40021n40031n4004+16 | |
A1378Contextual Info: DB473S6 Ordering number : ENA1378 SANYO Semiconductors DATA SHEET DB473S6 Silicon Diffused Junction Type Diode ESD Protection Diode Features • • • • Contact discharge 13kV guarantee IEC61000-4-2 . 6-pin package containing 4 devices. Low capacitance. Best suited for touch panel protection. |
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db473s6ena1378iec61000-4-2a1378-4/4+1 | |
semiconductor
Abstract: hirect H507CH Hirect diode H400TB
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semiconductorhirect h507chhirect diodeh400tb | |
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Contextual Info: DB4 BIDIRECTIONAL TRIGGER DIODE DO-35 Features ● VBO : 40V ● Breakover voltage range : 35 to 45V 1.0 2 26.0 MIN. 0.079(2.0) MAX 0.165 (4.2) MAX Applications 1.0 2(26.0) MIN. Functioning as a trigger diode with a fixed voltage reference, the DB4 can be used in conjunction |
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do-35 | |
MMBD2004
Abstract: MMBD2004A MMBD2004C MMBD2004S db6 sot-23 DB531
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mmbd2004/c/a/s225mampers300voltsot-23+8 | |
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Contextual Info: MMBD2004/C/A/S Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 225mAMPERS 300VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications |
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mmbd2004/c/a/s225mampers300voltsot-23+3 | |
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Contextual Info: MMBD2004/C/A/S Surface Mount Switching Diode * “G” Lead Pb -Free SWITCHING DIODE 225mAMPERS 300VOLTS Features: *Fast Switching Speed *Surface Mount Package Ideally Suited for Automatic Insertion *High Conductance *For General Purpose Switching Applications |
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mmbd2004/c/a/s225mampers300voltsot-23+3 | |
BT 69D
Abstract: FBC 320
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ff200r12mt4cbb32cbb326223db+5 | |
DIODE C06-15
Abstract: DIODE C06 15 DIODE C06-13
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fs300r17ke3cbb32cbb326223db+6 | |
LTC4098-3.6
Abstract: SXA-01GW-P0.6
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ff400r12ke3cbb32cbb326223db+5 | |
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+, |
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ddb6u25n16vr3de1322e14dd2313b32e36+6 | |
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values |
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bsm100gb120dlccbb32cbb326223db+5 | |
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values |
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bsm150gb120dlccbb32cbb326223db+5 | |
br - b2d
Abstract: br b2d
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bsm200gb120dlccbb32cbb326223db+7 | |
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LTC4098-3.6
Abstract: 36A65 FBC 320
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bsm200ga120dlcscbb32cbb326223db+6 | |
br b2d
Abstract: br- b2d br - b2d LTC4098-3.6
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bsm300gb120dlccbb32cbb326223db+9 | |
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Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C361CB3D132214DDD" 2313BCBC36134#6233236B4"3 |
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dz3600s17k32313bcbc223db86b56+3 | |
DIACS
Abstract: DB3 DB4 diac db3 specifications DIAC 5 VOLT
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do-35mil-std-202ediacsdb3 db4+2 | |
D60 DIAC
Abstract: thyristor firing circuit diac 32 V 5mA DIODE D28 Low Voltage DIACs 400C bidirectional diode thyristor diac diode db3 diac db3 specifications
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do-35mil-std-202ed60 diacthyristor firing circuit+7 | |
diac 32 V 5mA
Abstract: Bidirectional Diode Thyristors diac db3 specifications D60 DIAC diode d60 400C diode db3 DIAC 5 VOLT
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do-35mil-std-202ediac 32 v 5mabidirectional diode thyristors+6 | |
diac db3
Abstract: DIAC DO35 diac bidirectional diode diac db3 specifications
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iso/ts16949100hzc-120140104e+4 | |
diac DB3 application note
Abstract: DB3 application note DIAC DO35
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100hzc-120190402ediac db3 application note+2 | |
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Contextual Info: Doc No. TT4-EA-12509 Revision. 3 Product Standards Schottky Barrier Diode DB5S406K0R DB5S406K0R Silicon epitaxial planar type Unit: mm For high speed switching circuits DB4J406K in SSMini5 type package 1.6 0.2 5 Features 0.13 4 1.2 1.6 y Small reverse current IR |
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tt4-ea-12509db5s406k0rdb4j406kul-94+1 | |
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Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON DIAC BIDIRECTIONAL TRIGGER DIODES GLASS PASSIVATED PNPN DEVICE DB3, DB4 DO- 35 Glass Axial Package Functioning as a Trigger Diode with a Fixed Voltage Reference, DB3/DB4 can be |
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100hzc-120190402e | |