DIODE DB2 Search Results
DIODE DB2 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE DB2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LDTC0520
Abstract: WTC3243 PLD10K-CH WLD3343 cables WHY5690 PLD-10 laser diode driver 200 mhz Quantum cascade laser PID1500
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wld3343wld339314-pinfl500+13 | |
DB2F150N6SContextual Info: DB2F150N/P6S May. 2009 Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optim ized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters, |
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db2f150n/p6sdb2f150n6s | |
DB2F200N6S
Abstract: DB2F200P6S DB2F200N6 DB2F200N Cathode Anode Breakdown Voltage
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db2f200n/p6sdb2f200n6sdb2f200p6sdb2f200n6+2 | |
semiconductor
Abstract: hirect H507CH Hirect diode H400TB
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semiconductorhirect h507chhirect diodeh400tb | |
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Contextual Info: SDB310WAF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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sdb310wafot-23f25-aug-10ksd-d5c040-001 | |
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Contextual Info: SDB310WA SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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sdb310waot-2325-aug-10ksd-d5c036-001 | |
SDB310WAUFContextual Info: SDB310WAUF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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sdb310waufot-323f25-aug-10ksd-d5d018-001 | |
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Contextual Info: SDB310WAUF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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sdb310waufot-323f25-aug-10ksd-d5d018-001 | |
marking db2 sot23
Abstract: SDB310WA
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sdb310waot-2325-aug-10ksd-d5c036-001+1 | |
SDB310WKFContextual Info: SDB310WKF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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sdb310wkfot-23f25-aug-10ksd-d5c041-001 | |
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Contextual Info: SDB310WK SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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sdb310wkot-2325-aug-10ksd-d5c037-001 | |
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Contextual Info: SDB310WKF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature |
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sdb310wkfot-23f25-aug-10ksd-d5c041-001 | |
SDB310WK
Abstract: marking db8 sot23
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sdb310wkot-2325-aug-10ksd-d5c037-001+1 | |
SDB310WAF
Abstract: marking db2
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sdb310wafot-23f25-aug-10ksd-d5c040-001+1 | |
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Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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vs-etl015y120he789962002/95/ec2011/65/eu+2 | |
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Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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vs-etl015y120he789962002/95/ec2011/65/eu+2 | |
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Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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vs-etl015y120he789962002/95/ec2011/65/eu+2 | |
OTS-16 28 0.635-02
Abstract: connector DB25 Enplas ots-16 OTS-16 2N3904 equivalent db25 socket Transistor sot-23 pin map 2N3904 BAT54 HLMP-K150
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p-k150bat54ots-16 28 0.635-02connector db25+7 | |
diode 31 DQ 05Contextual Info: DIGITALLY CONTROLLED, 360-DEG. PIN DIODE P H A S E SH IFTER S E R IE S DQ GENERAL INFORMATION: KDI/Triangle's Series DQ digitally controlled PIN-diode phase shifters vary the phase of a micro wave signal in response to a TTL-compatible logic input signal. |
OCR Scan |
360-deg0-to-360-degdb-25pdiode 31 dq 05 | |
Triangle Microwave phase shifter
Abstract: AQ-81 phase shifter AQ24 Triangle Microwave AQ-42 triangle KDI
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OCR Scan |
360-deg0-to360-degdb-25ptriangle microwave phase shifter+6 | |
marking db2
Abstract: SDB310WA SDB310WAF ir 2901 ksd2069
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sdb310wafsdb310waot-23fksd-2069-000+3 | |
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Contextual Info: DB2S316 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB2S316 Product type: Schottky Barrier Diode Parameters *DEVICE=DB2S316,D * DB2S316 D model *$ .MODEL DB2S316 D + IS=477.23E-9 + N=1.0 + RS=1.6470 + IKF=1.9141 + CJO=8.4129E-12 |
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db2s31623e-94129e-1290e-9+2 | |
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Contextual Info: Doc No. TT4-EA-12625 Revision. 3 Product Standards Schottky Barrier Diode DB2X20600L DB2X20600L Silicon epitaxial planar type Unit: mm For high frequency rectification DB3X206K in Mini2 type package 1.6 0.13 2 • Features 2.6 3.5 Low forward voltage VF |
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tt4-ea-12625db2x20600ldb3x206kul-94 | |
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Contextual Info: Doc No. TT4-EA-14319 Revision. 3 Product Standards Schottky Barrier Diode DB2G41000L DB2G41000L Silicon epitaxial planar type Unit: mm 0.6 For rectification 1.0 2 Low forward voltage VF Forward current Average IF(AV) = 1 A rectification is possible |
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tt4-ea-14319db2g41000l | |