DIODE DB 3 C Search Results

T7026

Abstract: QFN20 T7026-PGP T7026-PGQ T7026-PGS
Contextual Info: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode

smd marking S21

Abstract: DIODE S4 56 smd diode S4 DIODE marking S4 06 BAP65-05
Contextual Info: Diodes SMD Type Silicon PIN diode BAP65-05 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage, current controlled 1 0.55 Two elements in common cathode configuration +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 RF resistor for RF switches

HBFP-0450

Abstract: 35-689 HBFP-0450-BLK CMP10 CMP12 55 ic Sot-343 HBFP0450TR1
Contextual Info: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0450 Features • Ideal for High Performance, Medium Power, and Low Noise Applications 4-lead SC-70 SOT-343 Surface Mount Plastic Package • Typical Performance at 1.8 GHz

Contextual Info: RF2492 Preliminary 8 DUAL-BAND LOW NOISE AMPLIFIER/MIXER Typical Applications • TDMA-GSM Cellular/PCS Handsets • CDMA Cellular/PCS Handsets • TDMA Cellular/PCS Handsets • GSM DCS/PCS Handsets • GAIT Handsets Product Description 1.00 0.85 Optimum Technology Matching Applied

D1VQ

Contextual Info: TL026C DIFFERENTIAL HIGH-FREQUENCY AMPLIFIER WITH AGC SLFS0Q7A - JUNE 1985 - REVISED JULY 1990 • Low Output Common-Mode Sensitivity to AGC Voltages D Oft P PACKAGE TOP VIEW • Input and Output Impedances Independent of AGC Voltage IN+ [ 1 U AGC [ 2 • Peak Gain . . . 38 dB Typ

laser diode symbol schematic

Abstract: EN-60825-2 Front Monitor Diode photodiode pin alpha STM-16
Contextual Info: Agilent HFCT-5944xxx Single Mode SFF Transceivers for SONET OC-48/SDH STM-16 Multirate Operation Part of the Agilent METRAK family Data Sheet Description The HFCT-5944xxx are high performance, cost effective modules for serial optical data communications applications

Contextual Info: Advance Product Information December 18, 2002 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss

all diodes ratings

Abstract: diode color code APC 5000 construction of photo diode dual laser diode HA 1335 HT 8870 Laser InP OL3300N-02 OL3300W
Contextual Info: Oki Semiconductor 0L3300N-02 and 0L3300W Low-Cost Laser Diode Modules D ES C R IP TIO N The 013300N -02 and 013300W are 1310 nm w avelength InG aA sP /InP laser diodes coupled to a single­ mode fiber w ith a pigtail. The 013300N -02 and OL3300W are provided in mini dual-in-line surface-m ount packages for com pact

L026

Contextual Info: TL026C DIFFERENTIAL VIDEO AMPLIFIER WITH AGC D 2 7 9 0 , JUNE 1 9 8 5 -R E V IS E D OCTOBER 1 9 8 8 Low Output Common-Mode Sensitivity to AGC Voltages D OR P PACKAGE TO P V IE W Input and Output Impedances Independent of AGC Voltage Peak Gain . . . 38 dB Typ

ORTEL

Abstract: AM-VSB photodiode amplifier PIN Photodiode Module For CATV Receiver 2610C
Contextual Info: □ A T A S A H ortel C O R P O R A T I O N 2610 C Broadband Photodiode Module • • • • • Flat Response, ±0.5 dB Frequency Response up to 600 M Hz High Responsivity >0.85 A /W Internal Current Gain >7 dB Compatible with 75 SI C A TV amplifier The Ortel Model 2610C is a packaged photodiode with internal current gain designed for use in

TA7630P

Abstract: bass treble volume control for 2 channel using IR
Contextual Info: TOSHIBA TA7630P D U AL. VOLUMC/BALArJCE/TOriE C A S S / T R E D L C DC CONTROL IC The TA7630P is DC controlled dual volume, balance, tone (Bass, treble) IC. As these dual channels are constructed on one chip, this IC is excellent in pair characteristic.

Contextual Info: CM1623 EMI Filter with ESD Protection for SIM Card Applications Features • • • 4-channel EMI filtering with integrated ESD protection Pi-style EMI filters in a capacitor-resistor-capacitor C-R-C network ±15kV ESD protection on each channel (IEC 61000-4-2 Level 4, contact discharge)

Texas Advanced Optoelectronic Solutions

Abstract: TSL257
Contextual Info: TSL257 HIGHĆSENSITIVITY LIGHTĆTOĆVOLTAGE CONVERTER t t TAOS023A – JULY 2000 D Converts Light Intensity to Output Voltage D Monolithic Silicon IC Containing D D D D D D PACKAGE FRONT VIEW Photodiode, Operational Amplifier, and Feedback Components High Sensitivity

10 gb laser diode

Contextual Info: 10Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TX-SXCMI -01 Features • Uncooled DFB Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

MINDSPEED M02015

Contextual Info: Revision Information This document contains information that is subject to change without notice. Contact Technical Publications for latest revision information. M02015 Low Power CMOS Transimpedance Amplifier with AGC for Fiber Optic Networks up to 2.5 Gbps

Contextual Info: CM1443-06CP 6-Channel EMI Filter Array with ESD Protection Features Applications • • • • • • • • Six channels of EMI filtering for data ports Pi-style EMI filters in a capacitor-resistor-capacitor C-R-C network +15kV ESD protection on each channel

DFB Laser-Diode 1550 nm

Abstract: Laser Diode Specifications 1550nm C-15-DFB-TX-SXXXX pin PD connector SC 1550 sxxxx laser diode 1550 ns luminent single mode
Contextual Info: 1550 nm MQW-DFB Laser Diode Module C-15-DFB-T/R/PX-SXXXX/XXX-X Features • Un-cooled laser diode with MQW structure • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Complies with Bellcore TA-NWT-000983

laser DFB 1310nm single mode

Abstract: Receptacle LC laser diode 1310 nm fiber coupled
Contextual Info: 1310 nm MQW-DFB Laser Diode Module C-13-DFB-T/R/PX-SXXXX/XXX-X Features • Un-cooled laser diode with MQW structure • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Complies with Bellcore TA-NWT-000983

WiMAX transceivers

Abstract: ah225
Contextual Info: AH225 1W High Linearity InGaP HBT Amplifier Applications Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX SOIC-8 Package Product Features Functional Block Diagram 400-2700 MHz 15.5 dB Gain @ 2140 MHz

NDL7620P

Abstract: NDL7620P1 NDL7620P1C NDL7620P1D NDL7620P2 NDL7620P2C NDL7620PC NDL7620PD STM-16 SM 4108
Contextual Info: 1310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s NDL7620P SERIES FEATURES DESCRIPTION • PEAK EMISSION WAVELENGTH: λP = 1310 nm The NDL7620P Series is a 1310 nm λ/4-phase-shifted DFB Distributed Feed-Back laser diode coaxial module with internal optical isolator. Newly developed strained Multiple

MCL c 029

Abstract: autotransformer Insertion Loss MCL f 030 MCL 1 029
Contextual Info: Surface Mount RFTransformer 75Ω TC9-1-75 0.3 to 475 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power DC Current Features -20°C to 85°C -55°C to 100°C 250mW 30mA • • • • • wideband 0.3-475 MHz leadless surface mount good return loss, 23 dB typ in 1 dB bandwidth

FP-Laser-Diode

Abstract: 10 gb laser diode UNCOOLED MQW-FP LD
Contextual Info: 10Gbps 1310 nm MQW-FP Laser Diode Module-TOSA C-13-010-TJ-SXCMI -01 Features • Uncooled FP Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for

Contextual Info: Surface Mount RF Transformer 75Ω TC9-1-75G2+ 0.3 to 475 MHz Features Maximum Ratings Operating Temperature Storage Temperature -20°C to 85°C -55°C to 100°C RF Power 250mW DC Current 30mA • wideband, 0.3 to 475 MHz • good return loss, 23 dB typ. in 1 dB bandwidth

NX8330RA

Abstract: NX8330RA-BA NX8330RA-CA STM-16 Laser Diode 14 pin DIL
Contextual Info: 1310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP NX8330RA STRAINED MQW-DFB LASER DIODE MINI-DIL PIGTAILED MODULE FOR 2.5Gb/s FEATURES DESCRIPTION • HIGH-SPEED RESPONSE: tr = 40 ps, tf = 100 ps The NX8330RA is a λ/4-phase shifted DFB Distributed FeedBack laser diode mini dual in-line (DIL) pigtailed module with