DIODE DB 3 C Search Results

DA0659

Contextual Info: FEATURES • 3 0 - 3 0 0 MHz MODEL NO. DA0659 VET / L ■ 1 dB LSB, 31 dB Range ■ Constant Phase ■ 2.2 dB Insertion Loss PIN Diode 5 Section Attenuator ■ +37 dBm 3rd Order Intercept 5 BIT ■ TTL Driver ■ 38 Pin DIP N /O U T 38 GND 37 - ► G N D

9315b

Abstract: SLD201V SLD201V3
Contextual Info: SLD201U-3/V-3 SONY« 50mW High Power Laser Diode Package Outline Description SLD201 U -3/V-3 is a gain-guided highpower laser diode fabricated by MOCVD. U nit: mm SLD201U-3 Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero visible laser diode.

Contextual Info: FEA TU RES & • 3 0 - 3 0 0 MHz ■ 1 dB LSB, 31 dB Range ■ Constant Phase MODEL NO. DA0659 PIN Diode 5 Section Attenuator ■ 2.2 dB Insertion Loss ■ +37 dBm 3rd Order Intercept 5 BIT ■ TTL Driver ■ 38 Pin DIP IN/OUT 38 GNO 37 36 35 34 33 32 31 30

Contextual Info: FEATURES MODEL NO. DA0035 • 2 0 - 3 0 0 MHz ■ 20 dB Linear Range Typical & ■ ± 0.8 dB Linearity PIN Diode Linear VCA ■ +44 dBm 3rd Order Intercept ■ 0.8 dB Insertion Loss ■ 14 Pin DIP ■ See 100C 0911 For Connectorized Version RF OUT/IN RF GND

9054

Abstract: DS0919
Contextual Info: FEATURES & • 3 - 5 GHz SP2T ■ 1.8 dB Insertion Loss ■ 124 dB Isolation ■ 24 nSec Switching Speed MODEL NO. DS0919 GaAs PIN Diode SP2T ■ Non-Reflective ■ TTL Driver ■ Mates with Low Loss Cable RF COM .012 ± .002 DIA 3 PLACES PA TTERN MATES W ITH

Contextual Info: FEA TU R ES MODEL NO. DA0098 • 2 0 -3 0 0 MHz ■ 40 dB Linear Range Typical ■ ± 2 dB Linearity PIN Diode Linear VCA ■ 2 dB Insertion Loss V ■ 14 Pin DIP ■ See DA0998 For Flat Pack Version ■ See 100C0912 For Connectorized Version RF OUT/IN .79

Contextual Info: FEATURES MODEL NO. DA0375 • 1 0 -1 5 0 MHz ■ 20 nSec Switching Speed ■ 3.5 dB Insertion Loss Schottky Diode 7 Section Attenuator ■ 0.1 dB LSB, 12.7 dB Range 7 BIT ■ TTL Control ■ See DA0775 For Surface Mount Version IN/OUT 38 QND « 37 3« RF IN/OUT

EL36

Abstract: ND5052-3G
Contextual Info: X TO K*BAND GaAs SCHOTTKY BARRIER MIXER DIODE FEATURES OUTLINE DIMENSIONS Untutnmm • X BAND MIXgR DIODE OUTLINE 3 6 • LOW NOISE GaAs SCHOTTKY DIODE NF = 5 dB TYP at I » 10 GHz • LOW TERMINAL CAPACITANCE C i =* 0.3 pF MAX at 1 M Hi • SMALL SIZE • LOW COST

73b diode

Abstract: mb-2d 100C1757 DA0617 DA0717
Contextual Info: FEATURES MODEL NO. DA0617 • 3 0 -2 0 0 MHz & ■ 25 nSec Switching Speed ■ 0.5 dB LSB, 63.5 dB Range & Schottky Diode 7 Section Attenuator ■ TTL Control ■ See DA0717 For Surface Mount Version 7 BIT ■ See 100C1757 For Connectorized Version 38 tm 1

DA0098

Abstract: DA0998
Contextual Info: FEATURES & • 2 0 - 7 0 0 MHz ■ 52 dB Linear Range ■ ± 2 dB Linearity MODEL NO. DA0998 XT PIN Diode VCA ■ 3 dB Insertion Loss ■ 14 Pin Flat Pack ■ See DA0098 For 14 Pin DIP Version VCA 1 RF OUT/IN , ÒÒÓÓÒÒ FACTORY TEST ONLY NO EXTERNAL CONNECTION

Contextual Info: SONY C O R P / C O M P O N E N T PR OD S 4TE D A3fl23fl3 OOOSTlb b SLD202U-3/V-3 SONY. T- w -or 50mW High Power Laser Diode Package Outline Description U nit: mm r S LD 202U -3/V -3 is a gain-guided highpow er laser diode fabricated by MOCVD. Features . Low noise S /N = 8 0 dB (Typ. at 5 mW.

directional detector

Contextual Info: DATA SHEET DD02-999, DD02-999LF: 650 MHz–3 GHz Directional Detector Features Pin Out Frequency coverage: 650 MHz to 3 GHz ● Typical insertion loss < 0.2 dB to 2.3 GHz ● Typical directivity > 23 dB ● Small outline SC-88 6-Lead SC-70 ● Built-in temperature compensating diode

Contextual Info: FEATURES • 3 0 - 2 5 0 MHz J ■ 20 nSec Switching Speed CD . MODEL NO. DA0717 Schottky Diode 7 section Attenuator 0.5 dB LSB, 63.5 dB Range • TTL control ■ See DA0617 For 38 Pin DIP Version 7 BIT ■ See 100C1757 For Connectorized Version IN/OUT 38

Contextual Info: DATA SHEET DD02-999, DD02-999LF: 650 MHz–3 GHz Directional Detector Features Pin Out Frequency coverage: 650 MHz to 3 GHz ● Low insertion loss: 0.2 dB typ. up to 2 GHz ● Directivity: 23 dB typ. ● Small outline SC-88 6-Lead SC-70 ● Built-in temperature compensating diode

100C1595

Abstract: DA0295 DA0795
Contextual Info: FEA TU R ES • TTL Control & ■ 38 Pin Surface Mount Package PIN Diode 7 Section Attenuator ■ 3 0 -5 0 0 MHz ■ 0.5 dB LSB, 63.5 dB Range MODEL NO. DA0795 ■ See DA0295 For 38 Pin DIP Version 7 BIT ■ See 100C1595 For Connectorized Version GUARANTEED PERFORMANCE

Contextual Info: DAICO INDUSTRIES INC blE D • QDD177S IDT DAI FEATURES ■ 3 0 - 5 0 0 MHz ■ 0.5 dB LSB, 63.5 dB Range ■ TTL Control ■ 38 Pin Surface Mount Package PIN Diode 7 Section A ■ See DA0295 For 38 Pin DIP Version ■ See 100C 1595 For Connectorized Version

MACOM SP8T

Abstract: SP8T isolation diodes MA4AGSW8-2
Contextual Info: MA4AGSW8-2 AlGaAs SP8T PIN Diode Switch Features V 1.00 MA4AGSW8-2 Layout Specified Performance : 50 MHz to 40 GHz Operational performance: 50 MHz to 50 GHz 2.0 dB Typical Insertion Loss at 40 GHz 30 dB Typical Isolation at 40 GHz thru 3 Diodes 22 dB Typical Isolation at 40 GHz thru 2 Diodes

TELEVISION EHT TRANSFORMERS

Abstract: ELC1043 ELC2000 ELC1042 AT4042 U321 U322 EHT COIL AP series AT1040
Contextual Info: Television assem blies book 3 part 5 tuners with diode tuning Noise factor Power gain transistors tuning diodes dB dB +12 + 0.3 to + 28 7 20 +1 2 + 0.3 to + 25 7 22 C.C.I.R. E 5 to E 1 2 E 2 to C E21 to E 6 9 +1 2 + 0.5 to + 28 6 to 13 depending on channel

"back diode"

Abstract: tangential back diode
Contextual Info: Back Diode Detector 2085 Series V 3.00 Specifications Mechanical Outline Drawing Parameter Specification Bias Current Negative 4 Output Polarity Video Resistance 80 Ohms Nominal 2 Maximum Power 40 mW CW or 3 erg spike Temperature Stability ± 1 dB over operating range

Contextual Info: FEATU RES • 50 m A ,+5 VDC ■ +40 dBm 3rd Order Intercept PIN Diode 6 Section Attenuator ■ 1 dB LSB, 63 dB Range 6 BIT MODEL NO. DA0844 dr ■ 3 0 -5 0 0 MHz ■ TTL Control -, xCT <s* ■ 38 Pin DIP PART ID E N T IF IC A T IO N RF IN/OUT 38 G N D _

Contextual Info: DAICO INDUSTRIES INC blE D • SbOMTED DODI?!, 04b ■ DAI FEA TU R ES J f c lj ■ 3 0 -5 0 0 MHz • 30 mA, +5 VDC MODEL NO. DA0285 P M Diode 7 Section Attenuator ■ +43 dBm 3rd Order Intercept ■ o.5 dB ls b , 63.5 dB Range ■ CMOS Control xO° ry ■ See 100C1585 For Connectorized Version

T7026

Abstract: QFN20 T7026-PGP T7026-PGQ T7026-PGS 33 GP 4563D
Contextual Info: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode

4563B

Abstract: T7026 QFN20 T7026-PGQ T7026-PGS
Contextual Info: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode

T7026

Abstract: QFN20 T7026-PGP T7026-PGQ T7026-PGS
Contextual Info: Features • • • • • • • • Single 3-V Supply Voltage High-power-added Efficient Power Amplifier Pout Typically 28 dBm Ramp-controlled Output Power Low-noise Preamplifier (NF Typically 2.1 dB) Biasing for External PIN Diode T/R Switch Current-saving Standby Mode