DIODE DB 03 Search Results

Contextual Info: FEATURES MODEL NO. DAT76191 2200 - 2800 MHz 0.5 dB LSB, 47.5 dB Range 3.2 dB Insertion Loss TTL Control Replaceable SMA Connectors 7 BIT PIN Diode 7 Section Attenuator RF IN/OUT PART IDENTIFICATION .10 0.38 ±.02 2 PLACES 16 dB 1.550 .10 RF IN/OUT • .25

Contextual Info: F E AT U R E S MODEL NO. DAT761 91 2200 - 2800 MHz 0.5 dB LSB, 47.5 dB Range 3.2 dB Insertion Loss TTL Control Replaceable SMA Connectors 7 BIT PIN Diode 7 Section Attenuator RF IN/OUT PART IDENTIFICATION .10 0.38 ±.02 2 PLACES 16 dB 1.550 .10 RF IN/OUT •

Contextual Info: F E AT U R E S MODEL NO. DAT761 91 2200 - 2800 MHz 0.5 dB LSB, 47.5 dB Range 3.2 dB Insertion Loss TTL Control Replaceable SMA Connectors 7 BIT PIN Diode 7 Section Attenuator RF IN/OUT PART IDENTIFICATION .10 0.38 ±.02 2 PLACES 16 dB 1.550 .10 RF IN/OUT •

Contextual Info: High IP3 PIN Diode Variable Attenuator 0.60-1.2 GHz Features • • • • • • Large Useable Bandwidth: 0.60 GHz to 1.2 GHz 1.0 dB Insertion Loss 14 dB Return Loss, Typical 25 dB Attenuation, Typical +50 dBm IP3 SOIC-8 Package MA4VAT907-1061T V1 PIN Configuration

Contextual Info: MEDIUM-HIGH POWER PIN DIODE SWITCH MODEL SWX-A09S ELECTRICAL SPECIFICATIONS Frequency Range: 130-155 MHz Isolation: 20 dB minim um Insertion Loss: 0.5 dB maxi m um VSWR: 5:1 Worst Case 1.5 nominal at highest power Switching Speed: 20 microsec typical RF Power:

TTL pin outs

Contextual Info: MEDIUM-HIGH POWER PIN DIODE SWITCH MODEL SWX-A09S ELECTRICAL SPECIFICATIONS Frequency Range: 130-155 MHz Isolation: 20 dB minim um Insertion Loss: 0.5 dB maxi m um VSWR: 5:1 Worst Case 1.5 nominal at highest power Switching Speed: 20 microsec typical RF Power:

ghz detector

Abstract: diode Robinson Laboratories schottky diode
Contextual Info: NEW PRODUCT RELEASE TWO WEEK DELIVERY! Schottky Diode Detector Schottky Diode Detector, Model 9045-001 operates over the frequency range of 0.5 to 18 GHz. Sensitivity is 2000 mV/mW minimum with output voltage flatness versus frequency of ±1.5 dB maximum. TSS is -51 dBm

MA4SW100

Abstract: 9620* diode MA4SW100-300
Contextual Info: Monolithic PIN Diode Switches MA4SW100, 200, 300 V3.00 Features ● ● ● ● Broadband Performance: Specified 1-18 GHz Usable 1-26 GHz SPST, SPDT Usable 1-20 GHz (SP3T) Insertion Loss 1.2 dB to 18 GHz Isolation 40 dB to 18 GHz Single Chip Replaces up to

92256

Abstract: 44750 7432 truth table 90087
Contextual Info: AlGaAs SPST Non-Reflective PIN Diode Switch MA4AGSW1A Rev 2.0 FEATURES • • • • Ultra Broad Bandwidth: 10 GHz to 50 GHz Functional Bandwidth: 100 MHz to 70 GHz 1.0 dB Insertion Loss, 35 dB Isolation at 50 GHz M/A-COM’s unique patent pending AlGaAs

1GM1

Abstract: 1GM1- 4220 Agilent JEDEC J-STD-033b 1GG5-8205 1gg5 1gm1-4220 TC626P Agilent 1gg5 TC626 8205
Contextual Info: Agilent 1GG5-8205 Packaged 13.5 GHz GaAs Diode Limiter TC626P Data Sheet Features • ESD Protection: 3000V Human Body Model • Insertion Loss: 1.0 dB Typ. • Port Match: S11 and S22 –15 dB Typ. • Power Handling: P–1dB 25 dBm Typ. • Distortion: SHI >100 dBm Typ.

TG9006

Abstract: 5V712
Contextual Info: Digital Attenuators Depending on switching speed requirements, either Pin Diode or GaAs Switches are used for the control elements. Attenuation steps are available from 0.1 dB to 63.5 dB. F req u en cy Range M Hz M odel TAD3186 1 A \6 0 0 ~ T AD5006 TAD5007

Contextual Info: F E AT U R E S MODEL NO. 100C17 57 45 - 200 MHz 25 nSec Switching Speed 0.5 dB LSB, 63.5 dB Range TTL Control SMA Connectors See DA0617 for 38 Pin DIP Version See DA0717 for Surface Mount Version 7 BIT Schottky Diode 7 Section Attenuator RF IN/OUT J2 RF IN/OUT

A1708

Abstract: VBT1-S5-S5-SMT BSS84LT1G MSWSS-020-40 RK73B2HTTD181J KOA Chip Resistors Packaging capacitor 22-25 mosfet 6 ghz BSS84LT1 J-STD-20C
Contextual Info: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.3 dB typical up to 2.7 GHz • High Isolation 50 dB typical up to 2.7 GHz

MSWSE-040-10

Abstract: A1708 VBT1-S5-S12-SMT 20v atc 0603 capacitor KOA Chip Resistors Packaging BSS84LT1 SN74ACT14 atc 1117 MSWSE
Contextual Info: MSWSE-040-10 PIN Diode Series Switch Element 1 1 2 2 2 0805P Features Description • Supports up to 40 watts power when cold switched • Low Insertion Loss 0.25 dB typical up to 2.7 GHz • Medium Isolation 11 dB typical up to 2.7 GHz A broadband, high linearity, medium power series switch

MSWSH

Abstract: MSWSH-020-30 SRF 3800 Power MOSFET A1708 KOA Chip Resistors Packaging PIN DIODE 10V 10mA SMT ATC1206 part 1 date sheet 2012 2N7002E BSS84LT1
Contextual Info: MSWSH-020-30 PIN DIODE SHUNT SWITCH ELEMENT 4 3 1 3 2,4 1 2 2012 Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.25 dB typical up to 2.7 GHz • High Isolation 31 dB typical up to 2.7 GHz A broadband, high linearity, medium power shunt switch

Contextual Info: BAT15-036 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq4.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)5.5

Contextual Info: BAT14-034 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq4.0G Frequency Min. (Hz)2.0G Frequency Max. (Hz)4.0G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5

Contextual Info: DMA5221-037 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandS Test Freq3.1G Frequency Min. (Hz)2G Frequency Max. (Hz)4G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: SONY CORP/COMPONENT PROPS MTE Ô3fl23fl3 Q Q Q E ^ m D B ISONY SLD201 U/V SONY. T -m -osr 20mW High Power Laser Diode Description Package Outline SLD201 U/V is a gain-guided high-power laser diode fabricated by MOCVD. Unit: mm SLD201U Features . Low noise S/ N = 8 0 dB Typ. at 5 mW.

DAS-A11S

Contextual Info: PIN DIODE ATTENUATOR, DIGITAL – CELLULAR DAS-A11S 3 BIT PLUS “OFF” SWITCH 800–900 MHz GENERAL INFORMATION The Model DAS-A11S is a pin diode switched type with series attenuators in a sealed thick film hybrid pin package. The unit includes an extinguish switch which provides a total of 65 dB isolation above insertion

3959 8-pin

Abstract: V-763-MTE SPECDILAS V-series
Contextual Info: Preliminary datasheet SPECDILAS V-Series SPECDILAS V-763-MTE Based on AVAP-µTEC Single Mode Laser Diode low threshold current Features: Applications: - no mode hopping - Oxygen Sensing - singlemode 20 dB suppression - Reference laser - circular beam profile

Contextual Info: PIN DIODE ATTENUATOR, DIGITAL – CELLULAR DAS-A11S 3 BIT PLUS “OFF” SWITCH 800–900 MHz GENERAL INFORMATION The Model DAS-A11S is a pin diode switched type with series attenuators in a sealed thick film hybrid pin package. The unit includes an extinguish switch which provides a total of 65 dB isolation above insertion

DAS-A11S

Contextual Info: PIN DIODE ATTENUATOR, DIGITAL – CELLULAR DAS-A11S 3 BIT PLUS “OFF” SWITCH 800–900 MHz GENERAL INFORMATION The Model DAS-A11S is a pin diode switched type with series attenuators in a sealed thick film hybrid pin package. The unit includes an extinguish switch which provides a total of 65 dB isolation above insertion

HMC350MS8

Abstract: 2.2 GHz local oscillator
Contextual Info: HMC350MS8 MICROWAVE CORPORATION HIGH IP3 SINGLE-BALANCED MIXER 0.6 - 1.2 GHz FEBRUARY 2001 V00.1200 Features General Description CONVERSION LOSS: 7.5 dB The HMC350MS8 is a miniature single balanced mixer in an 8 lead plastic surface mount package. The passive GaAs schottky diode mixer