DIODE DATASHEET CATALOG Search Results
DIODE DATASHEET CATALOG Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE DATASHEET CATALOG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
re1e002Contextual Info: RE1E002SP Pch -30V -250mA Small Signal MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 1.4W ID -250mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Drive circuits can be simple. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. *1 BODY DIODE |
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re1e002sp-250ma150mwr1120a+1 | |
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Contextual Info: RE1E002SP Datasheet Pch -30V -250mA Small Signal MOSFET lOutline VDSS -30V RDS on (Max.) 1.4W ID -250mA PD 150mW lFeatures EMT3F (3) (1) (2) lInner circuit 1) Drive circuits can be simple. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. *1 BODY DIODE |
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re1e002sp-250ma150mwr1120a | |
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Contextual Info: Schottky Barrier Diode RBQ30NS65A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ30NS 65A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar |
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rbq30ns65abq30nso263sr1102a | |
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Contextual Info: Schottky Barrier Diode RBQ10NS45A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ10NS 45A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar |
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rbq10ns45abq10nso263sr1102a | |
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Contextual Info: Schottky Barrier Diode RBQ30NS45A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ30NS 45A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar |
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rbq30ns45abq30nso263sr1102a | |
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Contextual Info: Schottky Barrier Diode RBQ20NS65A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ20NS 65A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar |
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rbq20ns65abq20nso263sr1102a | |
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Contextual Info: Schottky Barrier Diode RBQ20NS45A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ20NS 45A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar |
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rbq20ns45abq20nso263sr1102a | |
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Contextual Info: Schottky Barrier Diode RBQ10NS65A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ10NS 65A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar |
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rbq10ns65abq10nso263sr1102a | |
se2460
Abstract: SD2420 SE2460-003 SE2470
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se2460-003se2460se2470sd2420+3 | |
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Contextual Info: Super Fast Recovery Diode Datasheet RFNL5BM6S Serise Dimensions Unit : mm Land size figure (Unit : mm) 6.0 6.0 Standard Fast Recovery Application 1.6 3.0 2.0 1.6 General rectification 1 for PFC (Discontinuous Current Mode) TO-252 Features |
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o-252o-252msc-63r1102a | |
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Contextual Info: Super Fast Recovery Diode RF071L4STF Datasheet AEC-Q101 Qualified lLand size figure Unit : mm lDimensions (Unit : mm) lSeries Standard Fast Recovery 4.2 2.0 2.0 lApplication General rectification PMDS lStructure cathode lFeatures 1) Small power mold type. |
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rf071l4stfaec-q101od-106r1102a | |
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Contextual Info: Schottky Barrier Diode RB225NS-40 Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification RB225 NS40 lFeatures 1 1) Cathode common dual type. (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar |
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rb225ns-40rb225o263sr1102a | |
SD2410
Abstract: SD2420 SD2440 SE2470 SE2470-002 infrared emitting CIRCUIT
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se2470-002sd242020and20settings/rabab/desktop/datasheet+5 | |
127kVContextual Info: Schottky Barrier Diode Datasheet RB095T-60 Application Dimensions Unit : mm Structure Switching power supply Features (1) (2) (3) 1) Cathode common type. (TO-220) 6 2) Low IR 3) High reliability Construction Silicon epitaxial planar ROHM : TO220FN |
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rb095t-60o-220o220fn60hz/1cyc+2 | |
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Contextual Info: Schottky Barrier Diode Datasheet RB095T-60 / RB095T-60FH Application Dimensions Unit : mm Structure Switching power supply Features (1) (2) (3) 1) Cathode common type. (TO-220) 2) Low IR 6 3) High reliability Construction Silicon epitaxial planar |
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rb095t-60rb095t-60fho-220o220fn+2 | |
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Contextual Info: Schottky Barrier Diode RB238NS100 Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) Switching power supply RB238 NS100 lFeatures 1 1) Cathode common type. 2) Low IR 3) High reliability lStructure Cathode JEITA : TO263S ROHM : LPDS |
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rb238ns100rb238ns100o263s+1 | |
HOA0961-N51
Abstract: 097X HOA096X HOA097X SDP8600 SEP8506 hoa0961 U.S. Sensor
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hoa0961-n51hoa096x/097x20and20settings/rabab/desktop/datasheet+8 | |
RBE05AS20AContextual Info: RBE05AS20A Schottky Barrier Diode Datasheet RBE05AS20A lApplication lExternal dimensions Unit : mm lLand size figure (Unit : mm) Small current rectification 0.2 0.6 0.8 lFeatures 1)Ultra small mold type.(VML2) 2)Low VF VML2 3)High reliability lStructure |
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rbe05as20a60hz1cycr1120a | |
RohmContextual Info: Schottky Barrier Diode Datasheet RB095T-60 / RB095T-60FH Dimensions Unit : mm Application Structure Switching power supply (1) (2) (3) Features 1) Cathode common type. (TO-220) 2) Low IR 6 3) High reliability Construction Silicon epitaxial planar |
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rb095t-60rb095t-60fho-220o220fn+3 | |
HOA0971-N51
Abstract: HOA0971 HOA096X HOA097X SDP8600 SEP8506
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hoa0971-n51hoa096x/097x20and20settings/rabab/desktop/datasheet+6 | |
SEP8736-002Contextual Info: Datasheet - SEP8736-002 SEP8736-002 SEP Series AlGaAs Infrared Emitting Diode, Side-looking Plastic Package Representative photograph, actual product appearance may vary. Features ● ● ● Due to regional agency approval requirements, some products may not be |
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sep8736-002sdp8436sep873620and+2 | |
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Contextual Info: Schottky Barrier Diode RB228NS100 Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) Switching power supply RB2281 NS100 lFeatures 1 1) Cathode common dual type 2) Low IR LPDS 3) High reliability 4) AEC-Q101 qualified lConstruction |
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rb228ns100rb2281ns100aec-q101+2 | |
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Contextual Info: Schottky Barrier Diode RBE05AS20A Datasheet lExternal dimensions Unit : mm lApplication lLand size figure (Unit : mm) Small current rectification 0.2 0.6 0.8 lFeatures 1)Ultra small mold type.(VML2) 2)Low VF VML2 3)High reliability lStructure ROHM : VML2 |
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rbe05as20ar1120a | |
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Contextual Info: Schottky Barrier Diode Datasheet RBE05AS20A lApplication lExternal dimensions Unit : mm lLand size figure (Unit : mm) Small current rectification 0.2 0.6 0.8 lFeatures 1)Ultra small mold type.(VML2) 2)Low VF VML2 3)High reliability lStructure ROHM : VML2 |
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rbe05as20a60hz1cycr1120a | |