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    DIODE DATASHEET Search Results

    DIODE DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet

    DIODE DATASHEET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 PDF

    Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 PDF

    Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 PDF

    Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 PDF

    Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC8H065 O-220AC O-220AC STPSC8H065D STPSC8H065DI STPSC8H065B-TR STPSC8H065G-TR DocID023603 PDF

    Contextual Info: STPSC10H065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


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    STPSC10H065-Y DocID026618 PDF

    Contextual Info: Preliminary Datasheet RJS6005TDPN-EJ 600V - 15A - Diode SiC Schottky Barrier Diode R07DS0899EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material : Silicon Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


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    RJS6005TDPN-EJ R07DS0899EJ0101 PRSS0003AN-A O-220AB-2L) PDF

    Contextual Info: Preliminary Datasheet RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode R07DS0897EJ0200 Rev.2.00 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


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    RJS6004WDPK R07DS0897EJ0200 PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0200 Rev.2.00 Jan 28, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


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    RJS6005WDPK R07DS0901EJ0200 PRSS0004ZE-A PDF

    Contextual Info: Preliminary Datasheet RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A


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    RJS6005WDPK R07DS0901EJ0201 PRSS0004ZE-A PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0200 Rev.2.00 Oct 17, 2013 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    RJS6004TDPP-EJ R07DS0896EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    RJS6004TDPP-EJ R07DS0896EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    RJS6004TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6004TDPP-EJ R07DS0896EJ0102 Rev.1.02 Nov 21, 2012 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    RJS6004TDPP-EJ R07DS0896EJ0102 PRSS0002ZA-A O-220FP-2L) RJS6004TDPP-EJ PDF

    RJS6005TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0200 Rev.2.00 Oct 17, 2013 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    RJS6005TDPP-EJ R07DS0900EJ0200 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ PDF

    Contextual Info: Preliminary Datasheet RJS6004TDPN-EJ 600V - 10A - Diode SiC Schottky Barrier Diode R07DS0895EJ0101 Rev.1.01 Nov 21, 2012 Features • New semiconductor material: Silicon Carbide Diode  No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0003AN-A


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    RJS6004TDPN-EJ R07DS0895EJ0101 PRSS0003AN-A O-220AB-2L) PDF

    RJS6005TDPP-EJ

    Contextual Info: Preliminary Datasheet RJS6005TDPP-EJ R07DS0900EJ0300 Rev.3.00 Jan 23, 2014 600V - 15A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A


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    RJS6005TDPP-EJ R07DS0900EJ0300 PRSS0002ZA-A O-220FP-2L) RJS6005TDPP-EJ PDF

    Contextual Info: STPSC6TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


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    STPSC6TH13TI DocID024696 PDF

    Contextual Info: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


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    STPSC10TH13TI DocID024699 PDF

    Contextual Info: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


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    STPSC8TH13TI DocID024698 PDF

    Contextual Info: new high quality laser diode modules STAR - we proudly present a new series of laser diode modules: datasheet get more informations from our web site laser diode modules laser diodes LEDs optics please download our new pricelist pricelist ROITHNER LASERTECHNIK GmbH


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    PDF

    Contextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for


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    FFPF60B150DS O-220F FFPF60B150DSTU O-220F PDF

    Contextual Info: STPS20200C Power Schottky diode Datasheet − production data Features Diode 1 • Low forward voltage drop A1 • Very small conduction losses K Diode 2 • Negligible switching losses A2 • Extremely fast switching • Low thermal resistance K • -40°C minimum operating Tj


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    STPS20200C O-220FPAB STPS20200CFP O-220AB STPS20200CT STPS20200CG-TR DocID024382 PDF

    Contextual Info: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material


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    STPSC16H065C O-220AB STPSC16H065CT DocID024810 PDF