DIODE DA2 Search Results
DIODE DA2 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE DA2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
vrm 20
Abstract: diode reverse voltage protection DA221
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ot-523da221vrm 20diode reverse voltage protection | |
1X3 diode
Abstract: dan217 DA204K DA221 DA204U
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da221da204uda204kdan217+2 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes DA221 SOT-523 SWITCHING DIODE FEATURES: z Bias circuits z Protection circuits 1 3 2 MARKING: K Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter |
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ot-523da221 | |
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Contextual Info: DA221 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features Dual Diode Series Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability |
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da221ot-523mil-std-202 | |
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Contextual Info: DA204U SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features Dual Diode Series Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability |
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da204uot-323mil-std-202 | |
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Contextual Info: DA221 Switching Diode SOT-523 Features Bias circuits Protection circuits MARKING: K Dimensions in inches and millimeters Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 ℃ Symbol Limits Unit Peak reverse voltage VRM 20 V DC reverse voltage |
Original |
da221ot-523 | |
DA2F75N12S
Abstract: 5DM1
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da2f75n12s5dm1 | |
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Contextual Info: MURI DA20020 DACO SEMICONDUCTOR CO,LTD. THRU MUFRI DA20060 SUPER FAST HIGH POWER DIODE MODULE TYPES 200A Features High Surge Capability Types Up to 600V V rrm Isolation Type Package Electrically Isolation base plate 200 Amp Rectifier 200- 600 Volts HEAVY DIODE |
OCR Scan |
da20020da20060murida20020murida20040+1 | |
DA221Contextual Info: Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Diode DA221 SOT-523 SWITCHING DIODE FEATURES: Power dissipation PD: 150 mW Tamb=25℃ Collector current 100 mA IF: Collector-base voltage 20 V VR: Operating and storage junction temperature range |
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ot-523da221 | |
da2f100p12s
Abstract: DA2F100 DA2F100N12S da2f100n
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da2f100n/p12sda2f100p12sda2f100da2f100n12s+1 | |
A114D
Abstract: AN217 DAN217C
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OCR Scan |
imn11imp11an209san215+9 | |
da2jf81Contextual Info: New Proposal for Strobe Circuit 800V/0.2A Small Package Fast Recovery Diode DA2JF81 Overview DA2JF81 is the high voltage fast recovery diode FRD which has high speed trr characteristics and can reduce the switching loss for strobe circuit. Package is SMini2-F5 (2.50 x 1.25mm) which is |
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00v/0da2jf81200ma100ma+1 | |
A0 DIODE
Abstract: A0 SOT DA204U A005
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ot-323da204ua0 diodea0 sot+1 | |
1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
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hsn278wkhzc10hzc11hzc12+16 | |
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DIODE A112
Abstract: AP-803 AN2153 FTL 12-1 202k 204k
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OCR Scan |
an201diode a112ap-803an2153+2 | |
A116 diode
Abstract: DIODE A116 as 15-f DIODE A118 AP-222 diode smd6 44
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OCR Scan |
imn11imp11dan209sdan215+12 | |
sms05
Abstract: GPZ1275 xbox 360 lcd gameboy xbox 360 power supply FC177 SMDA08 VSB10P15LCI VS10P05 MSMF15C
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usb004usb208sfc05-4u040xfc+11 | |
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Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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vs-etl015y120he789962002/95/ec2011/65/eu+2 | |
BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
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mmbd4148200maot-23mbr0540+16 | |
77C7
Abstract: 887c 1r12r
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77c7887c1r12r | |
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Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
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vs-etl015y120he789962002/95/ec2011/65/eu+2 | |
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Contextual Info: DACO SEMICONDUCTOR CO,LTD. SUPER FAST HIGH POWER DIODE MODULE TYPE 200A Features High Surge Capability Type 1200V Vrrm Isolation Type Package Electrically Isolation base plate 200 Amp Rectifier 1200 Volt HEAVY DIODE Maximum Ratings Operating Temperature: -5 5 C to +175 °C |
OCR Scan |
murida200120da2091 | |
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Contextual Info: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance |
Original |
vs-etl015y120he789962002/95/ec2011/65/eu+2 | |
samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
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zd500qf500rhu002n06200ma+16 | |