DIODE D60 Search Results

Contextual Info: M E400803 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 T h te e -P h tiS e Diode Bridge Modules 30 Amperes/800 Volts Description: O U T L IN E DRAWING Powerex Three-Phase Diode Bridge Modules are medium pow­ ered devices for use in inverter

Contextual Info: Technische Information / technical information Netz-Gleichrichterdiode Rectifier Diode D6001N Key Parameters fenndaten VRRM 5000 V IFAVM 5790 A TC=100 °C IFSM VT0 118000 A 3570A (TC=55°C) 0,674 V rT 0,104 mΩ RthJC 4,5 K/kW Clamping Force 63 … 91 kN

DIACS

Abstract: DB3 DB4 diac db3 specifications DIAC 5 VOLT
Contextual Info: HITANO ENTERPRISE CORP. DB3 THRU DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,

Contextual Info: PD-2.462 International raÊjRectifier HFA60MB60C HEXFRED Ultrafast, Soft Recovery Diode Features V r = 600V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V (4-6) F ^ , ^ ANODE

2SK1822-01M

Contextual Info: 2SK1822-01M N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,07Ω 20A 35W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

2SK2166

Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

Contextual Info: 2SK1822-01M N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,07Ω 20A 35W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

2SK2166-01R

Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

2SK2165-01

Contextual Info: 2SK2165-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 100W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

D60 DIAC

Abstract: thyristor firing circuit diac 32 V 5mA DIODE D28 Low Voltage DIACs 400C bidirectional diode thyristor diac diode db3 diac db3 specifications
Contextual Info: DB3 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,

diac 32 V 5mA

Abstract: Bidirectional Diode Thyristors diac db3 specifications D60 DIAC diode d60 400C diode db3 DIAC 5 VOLT
Contextual Info: DB3 DC COMPONENTS CO., LTD. R THRU RECTIFIER SPECIALISTS DB4 TECHNICAL SPECIFICATIONS OF BIDIRECTIONAL DIODE THYRISTORS DIACS FEATURES * Glass passivalted three-layer for triggering thyristors. * Low breakover current at breakover voltage. * For use in thyristor phase-control circuit for lampdimming,

gs 069

Abstract: 2SK2166-01
Contextual Info: 2SK2166-01 N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications - Motor Control

bc 457

Abstract: Transistor BC 457 IRFP250 SMD-220 smd 8a 046
Contextual Info: PD-96059A HFA04SD60SPbF Ultrafast, Soft Recovery Diode t rr = 38ns IF AV = 4Amp VR = 600V Features • • • • • • • Ultrafast Recovery Time Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Temperature Lead-Free

Contextual Info: PD-96059A HFA04SD60SPbF Ultrafast, Soft Recovery Diode t rr = 38ns IF AV = 4Amp VR = 600V Features • • • • • • • Ultrafast Recovery Time Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Temperature Lead-Free

2514-6002UB

Abstract: NSSW100 TPS6118x NSSW100CT HPA260A JP13 JP15 2514-6002UB header NSP nichia TP72
Contextual Info: User's Guide SLVU238 – February 2008 WLEDEVM-260 WLED Load Board The WLEDEVM-260 load board contains 8 white light emitting diode WLED banks/strings which contain either 10 or 12 WLEDs as selected by the odd numbered jumpers (JP1, JP3, etc.). The even numbered

Contextual Info: bitemational PD-2.475 lüRectifier HFA75MB40C Ultrafast, Soft Recovery Diode HEXFRED" Features V R = 400V ISOLATE DBASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization o f Recovery Parameters V F = 1 .3 V i 1(1-3) ANODE 1 (4-6)

2475A

Abstract: D-60 HFA75MB40C IRFP250
Contextual Info: PD -2.475A HFA75MB40C HEXFRED Ultrafast, Soft Recovery Diode TM Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 400V VF(typ.)ƒ = 1V

DIODE h4b

Abstract: diode sg 45 APT2X31D50J pearson 411
Contextual Info: K2 A2 K1 ADVANCED POW ER Te c h n o lo g y * APT2X31D60J APT2X31D50J Al 600V S00V 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply

D-60

Abstract: HFA60MB60C IRFP250
Contextual Info: PD -2.462 HFA60MB60C Ultrafast, Soft Recovery Diode HEXFRED TM Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 600V VF(typ.)ƒ = 1.1V

D-60

Abstract: HFA60MB60C IRFP250
Contextual Info: PD -2.462 rev. A 03/99 HFA60MB60C Ultrafast, Soft Recovery Diode HEXFRED TM Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters (1-3) ANODE 1 (4-6) COMMON CATHODE (7-9) ANODE 2 VR = 600V

DVD laser head

Abstract: "dvd pickup"
Contextual Info: LASER DIODE LC-50S-660C/D-60X LC-50S-660C/D-60X is 660nm AlGaInP quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability. LC-50S-660C/D-60X is a CW single mode injection

Contextual Info: Bulletin 12039 International [K?RjRectifier 70/30ûu R s e rie s STANDARD RECOVERY DIODES Stud Version 250A 300A Features • ■ Alloy diode Peak reverse voltage up to 1000V ■ Popular series for rough service ■ Standard JEDEC types ■ Stud cathode and stud anode version

2N3906 SOT-23

Abstract: MMBT3906FSCT-ND CRCW060310R0FRT1 WLED driver CRCW06030R0FRT1 mic2297 H-22 M9999-120508-B
Contextual Info: Application Note 58 MIC2297 60 WLED Driver with Current Mirror Introduction The White Light-Emitting Diode WLED is becoming more and more popular for LCD back lighting in visual display electronics. Whether for lighting up LCDs in PDAs, cell phones or remote controls, the luminescence of the WLED