DIODE D2C Search Results

IFS100B12N3E4

Abstract: C5363 IFS100B12N3E4B
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current

Contextual Info: LM83 LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS111A LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM83 is a digital temperature sensor with a 2 wire serial

lm83

Contextual Info: LM83 LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface Literature Number: SNIS111A LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM83 is a digital temperature sensor with a 2 wire serial

Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.

Contextual Info: SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B 1N6642D2C / 1N6642D2D • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications.

sot-23 DIODE marking code D3B

Abstract: CCZ23C24 marking code d5g CCZ23C51 MARKING CODE D2H d3f sot23 D6B marking MARKING D3E D2E diode MARKING CODE D3E
Contextual Info: Silicon-Based Technology Corp. Small-Signal Zener Diodes CCZ23C2V7 – CCZ23C51 „ Features and Advantages: z Surface mount package for automatic assembly process z High precision Zener voltage VZ (Note3.) z Small Zener diode dynamic impedance(ZZT) z Low standby reverse current(VR) (Note4.)

LM83

Abstract: Silicon temperature sensors ADM1021 LM83CIMQA LM83CIMQAX LM84 MAX1617 04H0000 DS101058-6
Contextual Info: LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM83 is a digital temperature sensor with a 2 wire serial interface that senses the voltage and thus the temperature of three remote diodes using a Delta-Sigma analog-to-digital

LM83

Abstract: LT 6208 ADM1021 LM83CIMQA LM83CIMQAX LM84 MAX1617
Contextual Info: LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description The LM83 is a digital temperature sensor with a 2 wire serial interface that senses the voltage and thus the temperature of three remote diodes using a Delta-Sigma analog-to-digital

LM83

Abstract: j1n transistor diode BY 127 code j1n Transistor d2t 78 zener diode data 2N3904 ADM1021 LM83CIMQA LM83CIMQAX LM84
Contextual Info: Semiconductor tß LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description On-board local tem perature sensing The LM 83 is a digital tem perature senso r w ith a 2 w ire serial interface th a t senses the voltage and thus the tem perature of

SE304

Contextual Info: N EC 3ÜE D ELECTRONI CS INC • b427555 002*1046 S ■ " T -H I-i/ LIG HT EMITTING DIODE SE304 GaAs IN F RA R ED E M IT T IN G DIO DE -N E P O C S E R IE S — The SE304 is a GaAs Ga!lium Arsenide Infrared LEO in a plastic PA C K A G E D IM E N S IO N S

ZS 1052 AC UL

Abstract: k244 VRM 12.5 SK24100C SK2440C SK2450C SK2460C SK2470C sk245 diode db3 51
Contextual Info: DIOTEC ELECTRONICS CORP SflE D 2 3 ^ 1 0 7 0D0G05T 243 • D2C ■ DIX Data Sheet No.: SBDT-2400-A DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 24 AMP SCHOTTKY BARRIER RECTIFIERS TO-247 (TO-3PÏ

Contextual Info: DIOTEC ELECTRONICS CORP SflE D 23^107 • 0D0G05T 243 D2C ■ DIX Data Sheet No.: SBDT-24C DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 24 AMP SCHOTTKY BARRIER RECTIFIERS TO-247 (TO-3PÏ FEATURES:

Contextual Info: DS1395/DS1397 DALLAS SEMICONDUCTOR D S 1 3 9 5 /D S 1 3 9 7 RAMified Real Time Clock FEATURES PIN ASSIGNMENT * Ideal for EISA bus PCs A0on A1CÉ X2dC X10C STBYn r DOCE DICE D2CE D3CE D4DC D5QEZ Dene D7DE \festx * Functionally compatible with MC146818 in 32 KHz

M7 DIODE POLARITY

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF2C02HD Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process.

ipad charger

Abstract: emif05 Detector Schottky Diodes at 915MHZ pin connector ipad EMIF02-MIC04F2 STBGH91 STPS140M ipad sensor 3 mobile phone "Camera Module" conector usb PCB
Contextual Info: IPAD protection and rectifiers for mobile communication TM February 2006 www.st.com Contents Advantages of IPAD 4 Available packages 6 IPAD and discretes application mapping 7 LCD and camera 8 Bottom conector 10 USB interface 12 Memory card 14 SIM card interface

Contextual Info: SKM 200GB123D . 5 16 7*     # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122  122 + . 5 ;6 7* /;2 + 022 + > 12  /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*

Contextual Info: SKM 200GB123D . 5 16 7*     # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122  122 + . 5 ;6 7* /;2 + 022 + > 12  /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*

skm200gal123d

Contextual Info: SKM 200GB123D . 5 16 7*     # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122  122 + . 5 ;6 7* /;2 + 022 + > 12  /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*

Contextual Info: MMDF2C03HD Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

SKM200GAL123D

Contextual Info: SKM 200GB123D . 5 16 7*     # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122  122 + . 5 ;6 7* /;2 + 022 + > 12  /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*

Contextual Info: SKM 200GB123D . 5 16 7*     # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122  122 + . 5 ;6 7* /;2 + 022 + > 12  /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*

Contextual Info: SKM 200GB123D . 5 16 7*     # Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* /122  122 + . 5 ;6 7* /;2 + 022 + > 12  /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7*

Contextual Info: MMDF2C03HD Power MOSFET 2 Amps, 30 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the

Contextual Info: NTMD2C02R2 Preferred Device Power MOSFET 2 Amps, 20 Volts Complementary SO−8, Dual These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the