DIODE D132 Search Results

BD3 diode

Abstract: 6n06e k4366
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

LTC4098-3.6

Abstract: 6N16 l436 SXA-01GW-P0.6
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS100R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

6A243

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS150R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

Contextual Info: Technische Information / technical information FS75R06KE3 IGBT-Module IGBT-modules EconoPACK mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™ with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

isa2000

Abstract: powerex cd49
Contextual Info: m ßfEREX CD492010 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reverse Dual Diode POW-R-BLOK Modules 100 Amperes/2000 Volts Description: Powerex Reverse Dual Diode POW-R-BLOK™ Modules are designed for use in applications

semikron skiip 132 GDL

Contextual Info: SKiiP 132 GDL 120 - 412 CTV E/A Absolute Maximum Ratings Symbol Conditions 1) IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM

TDB6HK180N16RR

Abstract: 6a65
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3

132-gd

Abstract: TR 132-GD 132 gd 120 132Gd 120 132Gd 132 gd SKIIP GD Igbt 318
Contextual Info: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol Conditions 1 IGBT & Inverse Diode VCES Operating DC link voltage VCC 9) Theatsink = 25 °C IC IGBT & Diode Tj 3) 4) AC, 1 min. Visol Theatsink = 25 °C IF Theatsink = 25 °C; tp < 1 ms IFM tp = 10 ms; sin.; Tj = 150 °C

shindengen m

Contextual Info: Shindengen 3.3V /5V Output MD1320N 14.1 M AX Dimensions = mm Americajnc. DESCRIPTION 13.6 : The M D1320N is a high-efficiency step down DC-DC converter 17 32 Company Name power integrated circuit with main M O SFET switch and Schottky Type No. Barrier Diode. The M D1320N can deliver 7.5 watts maximum

CM121308

Abstract: CM1213-02SR CM1213-01ST
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

cm1213-04st

Abstract: 025 SOT23 CM1213-04SO CM1213 CM1213-01ST CM121308 CM1213-02SR D138 marking Zener diode sot23-5 california micro CM1213-02SS
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

CM1213-02ST

Abstract: CM1213-02SR CM1213-04SO ZENER DIODE E1 025 SOT23 3-pin D128 transistor HDMI D136 d138 SOT143 package CM1213 diode zener 05
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

CM1213-04SO

Abstract: CM1213 D123 CM1213-02SR CM1213-04ST Zener diode sot23-5 california micro CM121308
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

CM1213-02SS

Abstract: CM1213 CM1213-A4MR CM121308
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

CM1213-02SS

Abstract: CM121308 marking d1x1 CM1213-01ST
Contextual Info: CM1213 1, 2, 4, 6 and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1213 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

AL 1450 DV

Abstract: 132-gd 132 gd 120
Contextual Info: SEMIKRON SKiiP 132 GD 120 • 318 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1200 V IGBT & Inverse Diode VcES SKiiPPACK SK integrated intelligent Power PACK 3-phase bridge SKiiP 132 GD 120 + Driver 318 CTV 713 V cc 9> O perating D C link voltage

Contextual Info: HbflbBEb G0Dlb77 OS'i H I X Y d ix y s Thyristor Modules MCC132 iTAV= 2 x 130 A Thyristor/Diode Modules MCD132 vRRM= 600-1800 v Vr w V o *. V Vm Vmm V Type Version 1 Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* M C C 132-06io1 M C C 132-06io1

AL 1450 DV

Contextual Info: SEMIKRON S K iiP P A C K S K iiP 132 G P L 1 2 0 - 4 1 2 C TV E/A A b so lu te M ax im u m R atings Sym bol |c o n d itio n s 1> Values U n its 1200 V 900 V 3-p h a s e b ridg e IGBT & Inverse Diode V cE S V c c 9> O perating DC link voltage lc T h ea tsink

D1323

Abstract: RS-232C SN75188 MC1488 SN55188 SN7S188
Contextual Info: MC1488, SN55188, SN75188 QUAD LINE DRIVERS SLLS094A- D1323, SEPTEMBER 1 9 8 3 - REVISED MARCH 1993 Meets Specifications of EIA RS-232-C S N 5 5 1 8 8 . . . J OR W PACKAGE M C 1488, S N 7S 188 . . . D O R N P A C K A G E Designed to Be Interchangeable With

PW610

Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
Contextual Info: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,