DIODE D100 Search Results

D1004

Abstract: MCH3405 MCH5811 SS10015M
Contextual Info: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

IFM D100

Abstract: CD41 CD411230 CD411630
Contextual Info: CD411230 CD411630 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual Diode POW-R-BLOK Modules 30 Amperes/1200-1600 Volts A B 1 2 3 H D K - DIA. (2 TYP.) G E E L - M5 THD (3 TYP.) C A F CD411230, CD411630 Dual Diode

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Description Features Uniform light emitting area. The Hyper Red source color devices are made with Al- Low current operation GaInP on GaAs substrate Light Emitting Diode. Easily mounted on P.C.boards.

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SURKW Hyper Red Features Description z Uniform light emitting area. The Hyper Red source color devices are made with Al- z Low current operation GaInP on GaAs substrate Light Emitting Diode. z Easily mounted on P.C.boards.

RECTIFIER DIODE D100

Abstract: D100 diode D100/04 d100-16 diode D100/04 DIODE D100 D10008 D100/12 D100/16 1750a
Contextual Info: Rectifier Diode D100 Technical Data Typical applications : All purpose mean power rectifier diodes, Non-controllable rectifiers . Free-wheeling diodes. Type No. D100/04 D100/06 D100/08 VRRM Volts 400 600 800 VRSM (Volts) 500 700 900 D100/12 1200 1300 D100/16

KB-D100SRW

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SRW Super Bright Red Features Description z UNIFORM LIGHT EMITTING AREA. The Super Bright Red source color devices are made with z LOW CURRENT OPERATION Gallium Aluminum Arsenide Red Light Emitting Diode. z EASILY MOUNTED ON P.C.BOARDS.

KB-D100SRW

Contextual Info: 8.89mmx3.81mm LED LIGHT BAR Part Number: KB-D100SRW Super Bright Red Features Description z Uniform light emitting area. The Super Bright Red source color devices are made with z Low current operation Gallium Aluminum Arsenide Red Light Emitting Diode. z Easily mounted on P.C.boards.

Contextual Info: IDW100E60 Fast Switching Emitter Controlled Diode A Features: • 600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175 °C junction operating temperature  Easy paralleling

Contextual Info: VS901SL Ordering number : ENA1295A SANYO Semiconductors DATA SHEET VS901SL Low Capacitance TVS Diode General Purpose Protection Device Applications • • • • • USB 2.0. Mobile communication. STB, MP3, DVD, DSC. LCD, camera. Notebooks and desktop computers, peripherals.

IEC61000-4-4

Abstract: vs901sl diode d1008
Contextual Info: VS901SL Ordering number : ENA1295C SANYO Semiconductors DATA SHEET VS901SL Low Capacitance TVS Diode General Purpose Protection Device Applications • • • • • USB 2.0. Mobile communication. STB, MP3, DVD, DSC. LCD, camera. Notebooks and desktop computers, peripherals.

C3D10065I

Contextual Info: C3D10065I Silicon Carbide Schottky Diode Z-Rec Rectifier IF; 10 A TC<125˚C= = 25 nC Package 650-Volt Schottky Rectifier Ceramic Package provides 2.5kV isolation Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior

Contextual Info: SBH15-03 Ordering number : ENN6968B SBH15-03 Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBH15-03 applied sets to be made smaller. Low forward voltage VF max=0.3V . Average rectified current : IO=1.5A.

D1003

Abstract: SBH15-03
Contextual Info: SBH15-03 Ordering number : ENN6968B SBH15-03 Schottky Barrier Diode 30V, 1.5A Rectifier Features • • • Supports automatic mounting and permits SBH15-03 applied sets to be made smaller. Low forward voltage VF max=0.3V . Average rectified current : IO=1.5A.

Contextual Info: TIG058E8 Ordering number : ENA1381 SANYO Semiconductors DATA SHEET TIG058E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • • Low-saturation voltage. Low voltage drive 4V . Enhansment type. Built-in Gate-to-Emitter protection diode.

TIG058E8

Abstract: A1381
Contextual Info: TIG058E8 Ordering number : ENA1381 SANYO Semiconductors DATA SHEET TIG058E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • • Low-saturation voltage. Low voltage drive 4V . Enhansment type. Built-in Gate-to-Emitter protection diode.

D1003

Abstract: SBM30-03
Contextual Info: SBM30-03 Ordering number : ENN6967B SBM30-03 Schottky Barrier Diode 30V, 3A Rectifier Features • • • Supports automatic mounting and permits SBM30-03 applied sets to be made smaller. Low forward voltage VF max=0.4V . Average rectified current : IO=3A.

Contextual Info: CSD10060–Silicon Carbide Schottky Diode VRRM = 600V Zero Recovery Rectifier IF = 10A Qc = 28nC Features • • • • • • • Package 600 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

Contextual Info: CSD10060–Silicon Carbide Schottky Diode VRRM = 600 V Zero Recovery Rectifier IF AVG = 10 A Qc Features • • • • • • • = 28 nC Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation

Contextual Info: CSD10030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 10A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior

Contextual Info: CSD10030–Silicon Carbide Schottky Diode Zero R ecovery VRRM = 300V Rectifier IF = 10A Qc = 11.5nC Features • • • • • • • Package 300 Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High Frequency Operation Temperature Independent Switching Behavior