DIODE D07-15 04 Search Results

Contextual Info: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY _SDLS019B- APRIL 1990 - REVISED JULY 1997 Designed to Reduce Reflection Noise SC PACKAGE TOP VIEW Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems

Z5B6.2

Abstract: zener diode bzy88 z586 zener diode in746 IS2030A zener z5B6 axial zener z5.6bp zener Z5.6Bp
Contextual Info: SEM ITRON IN D U STR IES LTP M3 E I> 8 1 3 7 0 0 = G O D D I S ? • 1 «S LC B SERIES Hermetically Sealed Packaged ■Voltage Regulator Diode Released to BS9305-F0086 ■Voltage Range 2V7 to 39 Volts 400 mW Steady State ■120 Watt Peak Power BZY88 Series Available

switching diode 16 array

Abstract: diode d07 ScansUX7 SN74S1056
Contextual Info: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019 - D3492, APRIL 1990 • Designed to Reduce Reflection Noise • Repetitive Peak Forward Current. . . 300 mA SC PACKAGE TOP VIEW • D01 [ 1 ° D 02[ 2 D 03[ 3 8-Bit Array Structure Suited for

in823

Abstract: IN821 DIODE D 92 02 78.P
Contextual Info: S E M I T R O N I N D U S T R I E S LTD IN82I-82 M3E T> ñiaTññT DOGGlbT ñ • SLCB SERIES Zener Reference Diodes 6V2 and 6V55 Volts Temperature Compensated APPLICATIONS ■ Semitron's ‘ZR’ range of silicon voltage references are designed and tested to provide an economical and stable

Contextual Info: SEMITRON INDUSTRIES LTD M3E T> 013700^ G00G173 T Œ S L C B - n -i SERI ES Zener Reference Diode 11V7 Volts Temperature Compensated FEATURES GLASS D07 • Hermetically sealed ■ DC power dissipation 500mW at 25°C FIG. 1 MECHANICAL DATA ■ Case: Hermetically sealed glass case D07

IN939

Contextual Info: SEMITRON INDUSTRIES LTD 43E D B 013700^ 0000171 b BISLCB IN935-940B s e r i e s Zener Reference Diode 9V0 Volt Temperature Compensated APPLICATIONS • The ZR range are designed for operation at a specified current from 2 - 1 5 mA. It is recommended that Iz is held

Contextual Info: SN74S1051 12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS018A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D D OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for

Koep Precision Standards

Abstract: PRD7505LN PRD2000 PRD2010 PRD600 PRD7500 PRD7505 PRD7510 PRD7520 D0DD22
Contextual Info: _ 5 2 4 5 2 79 K O E P P R E C I S I O N S T A N D A R D S ~7Ë ^^524527=1 OOOOSH'ì T f 72C 00229 D 7"*- t<- 6 ? “ - VOLTAGE REFERENCE I I P ¡P H E O S I K D K I NEW-TECH STANDARDS Is, IM C o P R D S E R I E FOR REAL-WORLD USE DIO D ES S

Contextual Info: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for

ix 3368

Abstract: logic selection guide
Contextual Info: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for

IN750

Abstract: 1N239 1N47A IN4858 1N236 1N701 649-1 diode 1N665 1N236 diode DIODE 1N649
Contextual Info: Zener Type No. Zener Volt age 3t 1ZT @ mA Volts Zener Voltage Tolerance Max. Zener Impedance @ Ur Ohms S u ffix A 0 .2 0 Device Package 150m w Case A 8 1 N 2 2 5 ÎD 1N 2 2 6 il ) 1N 2 27 (1 ) 7 .5 • 1 0 .0 9 .0 • 12 .0 1 1 .0 • 14 .5 1N 228H ) 1N 229

EBV diode

Contextual Info: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for

1N4868

Abstract: 1N233 zener diode 1N429 1N239 1N471 IN753 IN4858 IN4868 diode JAN1N486B 1N47A
Contextual Info: Zener Volt age Zener Type No. 3t 1ZT @ mA Volts S u f f ix A 0 .2 0 MICROSEMI Zener Voltage Tolerance Max. Zener Impedance @ Ur Ohms Power Rating Device Package 150m w C a s e A 8 1 N 2 2 5 ÎD 1N 2 2 6 il ) 1 N 2 2 7 (1 ) 7 .5 • 1 0 .0 9 .0 • 1 2 .0

D0807

Abstract: v426 309H FUJINON TV LENS CF25L fujinon
Contextual Info: 1/7 inch 110k pixel Primary color filter CIF CMOS Image Sensor with A/D converter TCM5053LU Technical data sheet Tentative Ver. 4.6 April 17th, 2001 TOSHIBA Corporation Semiconductor Company, System LSI Division Marketing & Engineering Group Digital Consumer System LSI & Image Sensor

CI 3060 elsys

Abstract: mav55 ECG592 1N416C microwave diode ecg 588 ci 3060 DIODE Z54 Z11A 1N415C diode Z6 DIODE
Contextual Info: M icrowave Mixer Diodes Type No. Test Freq. MHz Noise Figure (dB) I.F. IM PED. Q 30 MHz (Ohms) VSW R Max. Ratio Burn Out (ERGS) Fig. No. 1N415C 9375 9.5 325-475 1.5 2.0 Z64 1N415E 9375 7.5 335-465 1.3 2.0 Z64 1N416C 3060 8.3 300-700 . 2.0 Z64 1N416E 3060

s1052 3 300

Abstract: SN74S1050 SN74S1052 display texas
Contextual Info: SN74S1050 12-BIT SCHOTTKY BARRIER DIODE BUS TERMINATION ARRAY SD LS015A D 3 2 2 8 . J U L Y 1 9 8 9 -H E V IS E D M A R C H 1 9 9 0 D O R N PACKAGE Designed to Reduce Reflection Noise TOP VIEW* Repetitive Peak Forward Current . . . 200 mA D01 g D02 : 2 D03 c 3

HX5116

Abstract: S107 S160 C22N C22P
Contextual Info: Document No.: Tentative Product Specification Module name: BL034ACRNBp$ Issue date: 2008/11/21 Version: 1.8 Customer Approved by Customer Approved by BOLYMIN PD Division ENG Division QA Dept Note: 1. The information contained herein may be change without prior notice. It is therefore advisable to contact BOLYMIN

Contextual Info: TECH. CORP. OKAYA Electric America, Inc. SPECIFICATIONS CUSTOMER : CUS007 : SE9664WRF-004-I02Q MASS PRODUCTION CODE : This Code will be changed while mass production PE9664WRF-004-I02Q SAMPLE MASS VERSION PRODUCTION CODE : 01 RS320240T-3X5WN-A (REV.A) SPECIFICATIONS EDITION

Contextual Info: SN74S1051 12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS018B – SEPTEMBER 1990 – REVISED MARCH 2003 D D D D, N, NS, OR PW PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for

HX8257A

Abstract: s534 diode HX8257-a g434 diode s448 schottky diode S698 DIODE Himax HX8257-A HX8257-A01 Himax CKV 2310
Contextual Info: DOC No. HX8257-A01-DS HX8257-A01 480RGBX272 TFT LCD Single Chip Digital Driver Version 01, November 2008 HX8257-A01 480RGBX272 TFT LCD Single Chip Digital Driver Version 01 November 2008 1. 2. 3. 4. 5. 6. 7. General Description . 4

Contextual Info: SN74S1053 16-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS017A – SEPTEMBER 1990 – REVISED AUGUST 1997 D D D D DW OR N PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 16-Bit Array Structure Suited for

HX5116

Abstract: bl043 C22N C22P S107 S160 BL043ACRNB 42 inch display
Contextual Info: Document No.: Tentative Product Specification Module name: BL043ACRNB$ Issue date: 2008/07/21 Version: 1.3 Customer Approved by Customer Approved by BOLYMIN PD Division ENG Division QA Dept Note: 1. The information contained herein may be change without prior notice. It is therefore advisable to contact BOLYMIN

HX5116

Abstract: OLED waveforms bl043 23/yamaha dx7 C22N C22P S107 S160 24bit parallel RGB to 8bit vspl
Contextual Info: Document No.: Tentative Product Specification Module name: BL043ACRNBp$ Issue date: 2008/07/21 Version: 1.3 Customer Approved by Customer Approved by BOLYMIN PD Division ENG Division QA Dept Note: 1. The information contained herein may be change without prior notice. It is therefore advisable to contact BOLYMIN

HX5116

Abstract: C22N C22P S107 S160 BL034ACRNB diode b212
Contextual Info: Document No.: Tentative Product Specification Module name: BL034ACRNB$ Issue date: 2008/12/01 Version: 1.9 Customer Approved by Customer Approved by BOLYMIN PD Division ENG Division QA Dept Note: 1. The information contained herein may be change without prior notice. It is therefore advisable to contact BOLYMIN