DIODE D 04 100 Search Results

BAT18

Abstract: ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

BAT18

Abstract: ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

BAT18

Abstract: BAT18-05 BAT18-04
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

G547F2P81U

Abstract: G547 Quanta ZG5 usb board quanta computer 11C15 Clamp-Diode Quanta ZR6 G547F2
Contextual Info: 5 4 3 2 1 D D USB CONNECTOR USB0PWR1 USBP0USBP0+ USBP0USBP0+ *6.34K/F_4 C19 .1U/10V_4 C20 C9 *Clamp-Diode 100U/6.3V_3528 1 C17 2 C15 C16 *470P/50V/04 .1U/10V_4 R313 1 5 CN1 2 OC# Follow ZG5 03/04 C10 *Clamp-Diode modify CN3 rev:C *100U/6.3V_3528 C 8 7 6 5

ASEA abb diode

Abstract: MOQ31 D1 diode 3108 DIODE ABB D1 MQQ31 E72873 5116D1
Contextual Info: A S E A BROUN/ABB SEMICON Schnelle Dioden-Module 03 D I □ 04 A3 dû O D D O n ? t Fast switching diode modules Daten pro D iode/data per diod e/les caractéristiques se rapportent à 1 diode V rrm Ifr m s V drm If a v m IfS M ft Tc- T v j m (10 ms) 100°C

Contextual Info: SEMIKRON V rsm dv/d t cr V rrm Itrms (maximum values for continuous operation) 24 A1*; 30 A2* V drm 2 4 A 1>;45A2> SEMIPACK 0 Thyristor / Diode Modules Itav (sin. 180; Toase = 65 °C) V V V/|xs 17,5 A2> 17,5 A2> 500 400 500 SKKT 15/04 D SKKH 15/04 D 700

BAS70

Abstract: BAS170W BAS70-02L BAS70-02W BAS70-04S MA6050 BAS70-05W BAS70-06 BAS70-04 BAS70-04W
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

INFINEON diode MARK 22

Abstract: marking code TS marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s bas16 infineon top marking code
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

DIN 6784

Abstract: marking code TS Diode Mark sot23 4x marking code 76s BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

BAS170W

Abstract: BAS70 BAS70-02L BAS70-02W BAS70-04S BAS70-04 BAS70-04W BAS70-05 BAS70-05W BAS70-06
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

marking code 76s

Abstract: BAS70-07W BAS170W BAS70-02L BAS70-02W BAS70-04S MARKING 74s marking 77s E6327 Application
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

BAS70-07

Abstract: 75S SOT23 schottky 73s BAS70-07W BAS170W BAS70 BAS70-02L BAS70-02W BAS70-04S marking 77s
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2 D 1

BAS 20 SOT23

Abstract: 44s sot23 BAS40 sot323 transistor marking 44s BAS140W BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06
Contextual Info: BAS40./BAS140W Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 3 1 3 2 1 BAS40-05 BAS40-05W 2 BAS40-06 BAS40-06W 3 D 1 D 2

Contextual Info: BAS40./BAS140W Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing BAS140W BAS40-02L BAS40 BAS40-04 3 1 3 2 1 BAS40-05 BAS40-05W 2 BAS40-06 BAS40-06W 3 D 1 D 2

BAS-400

Abstract: shcottky diode BAS40-05 smd smd code c09 BAS40 BAS40-04 BAS40-05 BAS40-06
Contextual Info: BAS40 / -04 / -05 / -06 200mW, Low V F, SMD Schottky Barrier Diode Small Signal Diode F A Features B —Metal-on-silicon Shcottky Barrier E —Surface device type mounting —Moisture sensitivity level 1 C G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

ERA15-02

Abstract: ERA1506 ERA15-06 ERA22-04 ERA48-02 ERA22-10 era4 ERA15-10 ERA22-02 ERA22-08
Contextual Info: V -V F U JI M IN I A X IA I. D IO D I? S E R IE S T PLAN -~ General purpose T Y P lì Vuj.l FRA15-01 ERA15-02 ERA15-04 MM15-06 ERA15-08 ERA15-10 100 200 4i)0 G00 000 1000 lo VL Ik FRD FRD Diode V V V V V V BRA-18-02 ERA48-04 200 V 400 V SOD Low loss FRD

BB510

Abstract: marking CA ITT DIODE
Contextual Info: ITT SEMICON] / INTERMETALL blE D • 4fc.62711 00D3175 TTE « I S I BB510 Tuner Diode Si Epitaxial Planar Capacitance Diode with very high effective capacitance ratio for tuning the whole MW range, especially in car receivers. i — r T tx -ÿ 04 I Id

Contextual Info: BAS70. / BAS170W Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2

BAS70

Abstract: BAS170W BAS70-02L BAS70-02W BAS70-04S BAS70-04 BAS70-04T BAS70-04W BAS70-05 BAS70-05W
Contextual Info: BAS70. / BAS170W Silicon Schottky Diode
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W 3 BAS70-04S 6 3 4 5 D 3 1 2

E72873

Abstract: D-68623
Contextual Info: Advanced Technical Information HiPerFREDTM Epitaxial Diode MEK 600-04 DA dual diode, common cathode VRSM VRRM V V 400 400 1 Type 2 VRRM = 400 V IFAVM = 880 A trr = 220 ns 3 2 3 1 MEK 600-04DA Symbol Conditions Maximum Ratings IFAVM IFAVM TC = 25°C; rectangular, d = 0.5

Herrmann

Abstract: type of diode
Contextual Info: HERRMANN KG 45E D • 443L275 OOOODTE 7 ■ HRMN ~T-C>h2$ Schnelle Dioden Fast Switching Diodes Diodes rapides Diodentyp Type of diode Type de diode HDS 12/04-4 'f a v m *FRMS V A A 400 12 20 iF A /¡2 d t 'f s m V rrm A A 2S "^VJM 150 110 Ir V 'f V (TO)

Contextual Info: SC21 1 0.8A : Outline D ra w in g s FAST RECOVERY DIODE -W - ^ 3*« Äm l_aLJ d I » 1« • M — k 12 Mi 1 -.*04 ì lJ 04 135*" 1 1 12*« l : Features • « S S S S * * "1*6 ■ 3 £ ;jv : M a rk in g Surface m ount device Cathode Mark Cod« High voltage by mesa design.

251C

Abstract: KCQ20A04
Contextual Info: SCHOTTKY BARRIER DIODE K C Q 20A 04 22A / 40V FEATURES o Similar to TO-247AC TO-3P Case o D ual Diodes - C athode C om m on o Low Forw ard Voltage D rop o Low Pow er Loss, High Efficiency o H igh Surge Capability o 40 Volts through 100 Volts Types Available

ESJA23-04

Abstract: diode A23
Contextual Info: ESJA23-04 3 . 6 k V *± /j'« a * * * - k : Outline Drawings HIGH VO LTAGE SILICO N DIODE ESJA23& , r i W ' d z L - ? • ESJA23 is high reliability resin molded type high voltage silicon diode for distributor-less automobile ignition system which is sealed a multilayed mesa type silicon chip by epoxy