DIODE CODE GW 42 Search Results

siemens functional profet

Abstract: MAR 723 BTS 723 siemens functional description profet P-DSO-14
Contextual Info: PROFET BTS 723 GW Smart High-Side Power Switch Two Channels: 2 x 100mΩ Ω Status Feedback Suitable for 42V Product Summary Package Operating Voltage Vbb on Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr)

diode code GW 17

Contextual Info: IGBT FMC6G15US60 Compact & Complex Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is

MC68HC16Z1CFC16

Abstract: 10K SIP Resistor 3FW 94 lcd 2X20 RAM 62256 80C32MOD-ULE-DIP 3FW 59 80C32 MAX147EVC16-DIP MAX147EVC32-DIP
Contextual Info: 19-4751; Rev 1; 1/97 MAX147 Evaluation System/Evaluation Kit _Component List DESIGNATION QTY DESCRIPTION C1, C7–C14 9 0.01µF ceramic capacitors C2, C4, C6, C15, C17–C20 8 0.1µF ceramic capacitors C3 C5 C16 J1 J18 JU1, JU2, JU5 R1-R8

gv 275 diode

Abstract: SMC7G30US60
Contextual Info: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit

SMC7G30US60 XX2

Abstract: A OF IGBT Fast Recovery Rectifier, 300V XX1
Contextual Info: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit

SMC6G30US60

Contextual Info: Preliminary SMC6G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in 3 Rectifier Circuit & k Package code : 21-PM-BA

SMC6G50US60

Contextual Info: Preliminary SMC6G50US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.1 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in 3 Rectifier Circuit & k Package code : 21-PM-BA

SMC7G50US60

Contextual Info: Preliminary SMC7G50US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.1 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in Brake & 3 Rectifier Circuit & k

SMC7G50US60

Contextual Info: Preliminary SMC7G50US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.1 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in Brake & 3 Rectifier Circuit & k

FMC7G10US60

Contextual Info: IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FMC6G15US60

Abstract: FMC7G15US60
Contextual Info: IGBT FMC6G15US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FMC6G10US60

Abstract: FMC7G10US60
Contextual Info: IGBT FMC6G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FMC6G50US60

Abstract: FMC7G50US60
Contextual Info: IGBT FMC6G50US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

Contextual Info: IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

FMC7G50US60

Contextual Info: IGBT FMC7G50US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

Contextual Info: IGBT FMC7G50US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power

Contextual Info: L99ASC03 Brushless / sensorless 3-phase motor pre-driver for automotive applications Datasheet - production data • TQFP48 7 x 7 x 1 mm with Exposed Pad 4.5 x 4.5 mm package Applications • Mechatronic three-phase motor application such as engine cooling fans, fuel pumps, water

Contextual Info: SC4525C 28V 3A Step-Down Switching Regulator POWER MANAGEMENT Features            Description Wide input range: 3V to 28V 3A Output Current 200kHz to 2MHz Programmable Frequency Precision 1V Feedback Voltage Peak Current-Mode Control

gw 340 diode

Abstract: SC4525CEVB diode schottky code GW sc4525c SOIC-8 SC4525CSETRT 0589 diode code GW 17 ZENER diode t 4148 IPC-SM-78
Contextual Info: SC4525C 28V 3A Step-Down Switching Regulator POWER MANAGEMENT Features            Description Wide input range: 3V to 28V 3A Output Current 200kHz to 2MHz Programmable Frequency Precision 1V Feedback Voltage Peak Current-Mode Control

hef4051

Abstract: 74AUP2G34 74LVT1403 74ABT543A 74LV74 74AVCH1T45 74HC590 CBTD3306 NCX2200 74HC40103
Contextual Info: ロジック IC データスイッチ/アナログスイッチ コンパレータ レベルシフタ 汎用ロジック Index 2 ●● P3 NXP ロジック ●● P4 低抵抗アナログスイッチ/データスイッチ ●● P7 コンパレータ ●●

ENGcm09460

Contextual Info: Freescale Semiconductor Errata Document Number: IMX25CE Rev. 6, 09/2012 Chip Errata for the i.MX25 This document details all known silicon errata for the i.MX25. Table 1 provides a revision history for this document. Table 1. Document Revision History Rev.

Contextual Info: SC4525D 18V, 3A, 350kHz Step-Down Switching Regulator POWER MANAGEMENT Features           Input range: 3V to 18V 3A Output Current 350kHz Fixed Switching Frequency Precision 1V Feedback Voltage Peak Current-Mode Control Cycle-by-Cycle Current Limiting

Contextual Info: Z2SMB6V2 . Z2SMB200 2.0 W Surface Mounted Glass Passivated Zener Diode Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.2 to 200 V Power 2.0 W 1.25 ± 0.25 • Glass passivated junction • The plastic material carries UL 94 V-0 • Low profile package

IR7309

Abstract: EY 85 rectifier IR-730 IN5822 IN5817 IN5822 diode MAX1640 MAX1640EEE MAX1641 MAX1641EEE
Contextual Info: 19-1245; Rev 2; 5/09 ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?