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    DIODE CODE GW 42 Search Results

    DIODE CODE GW 42 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet

    DIODE CODE GW 42 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    siemens functional profet

    Abstract: MAR 723 BTS 723 siemens functional description profet P-DSO-14
    Contextual Info: PROFET BTS 723 GW Smart High-Side Power Switch Two Channels: 2 x 100mΩ Ω Status Feedback Suitable for 42V Product Summary Package Operating Voltage Vbb on Active channels On-state Resistance RON Nominal load current IL(NOM) Current limitation IL(SCr)


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    P-DSO-14 2001-mar-16 siemens functional profet MAR 723 BTS 723 siemens functional description profet P-DSO-14 PDF

    diode code GW 17

    Contextual Info: IGBT FMC6G15US60 Compact & Complex Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is


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    FMC6G15US60 21PM-AB diode code GW 17 PDF

    MC68HC16Z1CFC16

    Abstract: 10K SIP Resistor 3FW 94 lcd 2X20 RAM 62256 80C32MOD-ULE-DIP 3FW 59 80C32 MAX147EVC16-DIP MAX147EVC32-DIP
    Contextual Info: 19-4751; Rev 1; 1/97 MAX147 Evaluation System/Evaluation Kit _Component List DESIGNATION QTY DESCRIPTION C1, C7–C14 9 0.01µF ceramic capacitors C2, C4, C6, C15, C17–C20 8 0.1µF ceramic capacitors C3 C5 C16 J1 J18 JU1, JU2, JU5 R1-R8


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    MAX147 10-pin MAX147BCPP MAX872CPA MAX393CPE MAX666CPA MAX495C3? 80C32 MC68HC16Z1CFC16 10K SIP Resistor 3FW 94 lcd 2X20 RAM 62256 80C32MOD-ULE-DIP 3FW 59 MAX147EVC16-DIP MAX147EVC32-DIP PDF

    gv 275 diode

    Abstract: SMC7G30US60
    Contextual Info: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit


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    SMC7G30US60 21-PM-BA gv 275 diode SMC7G30US60 PDF

    SMC7G30US60 XX2

    Abstract: A OF IGBT Fast Recovery Rectifier, 300V XX1
    Contextual Info: Preliminary SMC7G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100°C * Built in Brake & 3 φ Rectifier Circuit


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    SMC7G30US60 21-PM-BA SMC7G30US60 XX2 A OF IGBT Fast Recovery Rectifier, 300V XX1 PDF

    SMC6G30US60

    Contextual Info: Preliminary SMC6G30US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.0 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in 3 Rectifier Circuit & k Package code : 21-PM-BA


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    SMC6G30US60 21-PM-BA SMC6G30US60 PDF

    SMC6G50US60

    Contextual Info: Preliminary SMC6G50US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.1 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in 3 Rectifier Circuit & k Package code : 21-PM-BA


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    SMC6G50US60 21-PM-BA SMC6G50US60 PDF

    SMC7G50US60

    Contextual Info: Preliminary SMC7G50US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.1 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in Brake & 3 Rectifier Circuit & k


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    SMC7G50US60 21-PM-BA SMC7G50US60 PDF

    SMC7G50US60

    Contextual Info: Preliminary SMC7G50US60 COMPACT & COMPLEX MODULE FEATURES * High Speed Switching * Low Saturation Voltage @ VCE sat = 2.1 V (typ) * High Input Impedance * Short Circuit Min. 10uS Rated @ VCC=300V, VGE=15V, TC=100 * Built in Brake & 3 Rectifier Circuit & k


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    SMC7G50US60 21-PM-BA SMC7G50US60 PDF

    FMC7G10US60

    Contextual Info: IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMC7G10US60 E209204 21PM-AA FMC7G10US60 PDF

    FMC6G15US60

    Abstract: FMC7G15US60
    Contextual Info: IGBT FMC6G15US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMC6G15US60 E209204 21PM-AA FMC6G15US60 FMC7G15US60 PDF

    FMC6G10US60

    Abstract: FMC7G10US60
    Contextual Info: IGBT FMC6G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMC6G10US60 E209204 21PM-AA FMC6G10US60 FMC7G10US60 PDF

    FMC6G50US60

    Abstract: FMC7G50US60
    Contextual Info: IGBT FMC6G50US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMC6G50US60 E209204 21PM-BA FMC6G50US60 FMC7G50US60 PDF

    Contextual Info: IGBT FMC7G10US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMC7G10US60 E209204 21PM-AA PDF

    FMC7G50US60

    Contextual Info: IGBT FMC7G50US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMC7G50US60 E209204 21PM-BA FMC7G50US60 PDF

    Contextual Info: IGBT FMC7G50US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor IGBT power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power


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    FMC7G50US60 E209204 21PM-BA PDF

    Contextual Info: L99ASC03 Brushless / sensorless 3-phase motor pre-driver for automotive applications Datasheet - production data • TQFP48 7 x 7 x 1 mm with Exposed Pad 4.5 x 4.5 mm package Applications • Mechatronic three-phase motor application such as engine cooling fans, fuel pumps, water


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    L99ASC03 TQFP48 TQFP48-EP L99ASC03 DocID023504 PDF

    Contextual Info: SC4525C 28V 3A Step-Down Switching Regulator POWER MANAGEMENT Features            Description Wide input range: 3V to 28V 3A Output Current 200kHz to 2MHz Programmable Frequency Precision 1V Feedback Voltage Peak Current-Mode Control


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    SC4525C 200kHz SC4525C PDF

    gw 340 diode

    Abstract: SC4525CEVB diode schottky code GW sc4525c SOIC-8 SC4525CSETRT 0589 diode code GW 17 ZENER diode t 4148 IPC-SM-78
    Contextual Info: SC4525C 28V 3A Step-Down Switching Regulator POWER MANAGEMENT Features            Description Wide input range: 3V to 28V 3A Output Current 200kHz to 2MHz Programmable Frequency Precision 1V Feedback Voltage Peak Current-Mode Control


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    SC4525C SC4525C gw 340 diode SC4525CEVB diode schottky code GW SOIC-8 SC4525CSETRT 0589 diode code GW 17 ZENER diode t 4148 IPC-SM-78 PDF

    hef4051

    Abstract: 74AUP2G34 74LVT1403 74ABT543A 74LV74 74AVCH1T45 74HC590 CBTD3306 NCX2200 74HC40103
    Contextual Info: ロジック IC データスイッチ/アナログスイッチ コンパレータ レベルシフタ 汎用ロジック Index 2 ●● P3 NXP ロジック ●● P4 低抵抗アナログスイッチ/データスイッチ ●● P7 コンパレータ ●●


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    PDF

    ENGcm09460

    Contextual Info: Freescale Semiconductor Errata Document Number: IMX25CE Rev. 6, 09/2012 Chip Errata for the i.MX25 This document details all known silicon errata for the i.MX25. Table 1 provides a revision history for this document. Table 1. Document Revision History Rev.


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    IMX25CE ENGcm11122. ENGcm12383 TLSbo95476. BID2773, ENGcm09152. ENGcm11891. ENGcm12381. ENGcm11802. ENGcm09460 PDF

    Contextual Info: SC4525D 18V, 3A, 350kHz Step-Down Switching Regulator POWER MANAGEMENT Features           Input range: 3V to 18V 3A Output Current 350kHz Fixed Switching Frequency Precision 1V Feedback Voltage Peak Current-Mode Control Cycle-by-Cycle Current Limiting


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    SC4525D 350kHz SC4525A 20BQ030 PDF

    Contextual Info: Z2SMB6V2 . Z2SMB200 2.0 W Surface Mounted Glass Passivated Zener Diode Dimensions in mm. CASE: SMB/DO-214AA Voltage 6.2 to 200 V Power 2.0 W 1.25 ± 0.25 • Glass passivated junction • The plastic material carries UL 94 V-0 • Low profile package


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    Z2SMB200 SMB/DO-214AA EIA-RS-481) PDF

    IR7309

    Abstract: EY 85 rectifier IR-730 IN5822 IN5817 IN5822 diode MAX1640 MAX1640EEE MAX1641 MAX1641EEE
    Contextual Info: 19-1245; Rev 2; 5/09 ?W2@?@@@@@@@@@@@@@@@ ?W2@?@@@@@@@@@@@@@@@ ?O@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@6X ?W2@@@@@@@@@@@@@@@@@@?g?@@@@@@@@@@@@@@@ W2@?@@@@@@@@@@@@@@@? O2@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ W&@@?@@@@@@@@@@@@@@@ ?W2@@?@@@@@@@@@@@@?f@@@@@@@@@@@@@@@@@@@@@ X?


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    MAX1640 MAX1641 MAX1640EEE+ MAX1641C/D MAX1641EEE+ MAX1640C/D MAX1641) MAX1640) 16-Pin IR7309 EY 85 rectifier IR-730 IN5822 IN5817 IN5822 diode MAX1640 MAX1640EEE MAX1641 MAX1641EEE PDF