DIODE CODE 15 F Search Results

diode 1500V

Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

diode marking e41

Abstract: E41-15 diode 3A 1500V 1500V 3A diode
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

Contextual Info: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration

diode marking code I5

Contextual Info: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded

D09-15

Abstract: diode D09-15 D09.15 diodes CUREENT erd09 d09.15
Contextual Info: ERD09 3.0A ( 1300 to 1500V / 3.0A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Blue D09-15 High reliability Abridged type name Voltage class Applications

schottky marking code PD

Contextual Info: 1SS372W SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • High speed switching 3 1 2 Marking Code: ME Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Average Forward Current

D09-15

Abstract: w1300 diode D09-15
Contextual Info: ERD09 3.0A ( 1300 to 1500V / 3.0A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Blue D09-15 High reliability Abridged type name Voltage class Applications

DIODE C06-15

Abstract: c06-15 DIODE C06 15 DIODE C06 C06-15 diode C0615 DIODE C06-15 75 erc06 c06 15
Contextual Info: ERC06 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : Blue Applications C06 15 Abridged type name

MARKING ta y sod-323

Abstract: smd code marking book smd diode marking code
Contextual Info: BB148WS VHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Excellent linearity DESCRIPTION PIN Excellent matching to 1% DMA Very small plastic SMD package C28: 2.6 pF; ratio:15 1 Cathode 2 Anode 2 1 TA Low series resistance Top View Marking Code: "TA" Simplified outline SOD-323 and symbol

international smd marking code

Contextual Info: BB148WS VHF VARIABLE CAPACITANCE DIODE FEATURES PINNING Excellent linearity DESCRIPTION PIN Excellent matching to 1% DMA Very small plastic SMD package C28: 2.6 pF; ratio:15 1 Cathode 2 Anode 2 1 TA Low series resistance Top View Marking Code: "TA" Simplified outline SOD-323 and symbol

diode D07-15

Abstract: D07 15 d07-15 diode d07-15 diode D07-15 04 d0715 diode D07-15 30 fast recovery diode 1500V diode erd07-15
Contextual Info: ERD07 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : White Applications D07- 15 51 Abridged type name

BAT378W

Contextual Info: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)

BAT378W

Abstract: MARKING CODE B7
Contextual Info: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)

D30L60

Contextual Info: Super Fast Recovery Diode Single Diode •¿m H D30L60 OUTLINE Unit : mm W eight 4.3« T yp P a c k a g e : IT O -3 P 5.5 15 600V 30A a -Æ H K W ) Date code N Feature • raiHŒ FRD • • • • • e y -fX • trr=150ns • yJlst-Jb F S3T High Voltage Super FRD

D20SC9M

Abstract: marking code AJs
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE D20SC9M Unit : mm P a c k a g e : IT O -3 P Weight 4.3« Typ 15 90V 20A Date code Feature • T j= 1 5 0 t: • Tj=150°C • P rrs m T lK r jy is x fä M . • *«9K8B • P rr s m Rating • High lo Rating • 7 J I Æ - J L-K

30SC4M

Abstract: FtZ MARKING CODE Diodo Schottky D30SC4M DIODO diodo 10 A
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE Package : ITO-3P D30SC4M U nit : m m W eight 4.3 « T y p 15 40V 30A 5.5 . n ? h £ 9 (fl) Date code N Feature f f a « 9 (n > • Tj=i5(rc • Tj=1 50°C • P r r s m P K t? • P r r s m Rating • ttU K S B • High lo Rating

Contextual Info: Bridge Diode Single In-line Package OUTLINE D4SB80 Unit : mm Weight : 3.9g typ. Package 3S 800V 4A 管理番号（例） Control No. 品名 Type No. • SIP • UL E142422 IFSM • ロット記号（例） Date code 25 D4SB 80 4.6 0264 15 ＋ ① Feature ~ ∼

FtZ MARKING CODE

Abstract: D25SC6M D25SC6MR
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE D25SC6MR Unit :m m P a c k a g e : IT O -3 P W eight 4.3k T y p 15 60V 25A 5.5 n-yt-m XW ) D a te code Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm R ating • ttU K S B • High lo Rating • 7 J I Æ - J L/K

Contextual Info: Bridge Diode Single In-line Package OUTLINE D10XB60H Unit : mm Weight : 4.4g typ. Package 3S 600V 10A 管理番号（例） Control No. 品名 Type No. • SIP • UL E142422 • IFSM • • ロット記号（例） 4.6 Date code 25 D10XB 60H 0264 15 ＋

Contextual Info: Bridge Diode Single In-line Package OUTLINE D10XB Unit : mm Weight : 4.4g typ. Package 3S 800V 10A 管理番号（例） Control No. 品名 Type No. • SIP • UL E142422 • IFSM • • ロット記号（例） 4.6 Date code 25 D10XB 60 0264 15 ~ ∼

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

Contextual Info: PD - 94925B IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

d 1830

Contextual Info: PD - 94925C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

ccd diode

Abstract: 50A-150A 2SH2S37 50A-150 diode code F 15 diode code 15 F
Contextual Info: CRYDOM CO 31E 2SH2S37 D OGOObll cavaoM 0 • CRY POWER MODULES C O M P A N Y 40A-90A DIODE CIRCUITS PA RA M ETER Average Output Current per Device One-Cycle Surge Current Peak f t for Fusing (Max.) Leakage Current (Max.) Isolation Vtoltage (Min.) Junction Operating and Storage