DIODE CME Search Results

Diode - Quad, Fast Switching

Contextual Info: CMEDA-6i SURFACE MOUNT MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMEDA-6i is an isolated, monolithic silicon quad switching diode array and epoxy molded in an SOT-28 surface

Contextual Info: CMEDA-6i SURFACE MOUNT MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMEDA-6i is an isolated, monolithic silicon quad switching diode array and epoxy molded in an SOT-28 surface

CPD74

Contextual Info: PROCESS CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Top Side Metalization

CPD74

Contextual Info: PROCESS CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Top Side Metalization

CPD74

Contextual Info: Central PROCESS TM Semiconductor Corp. CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS

PROTEK SO-8 DEVICE MARKING

Contextual Info: 05098 PSRDA70-4 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The PSRDA70-4 is an ultra low capacitance steering diode array designed to protect circuit applications from the effects of Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Its ultra low capacitance allows maintenance

Contextual Info: 05098 PSRDA70-4 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The PSRDA70-4 is an ultra low capacitance steering diode array designed to protect circuit applications from the effects of Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Its ultra low capacitance allows maintenance

psrda70

Abstract: PSRDA70-4
Contextual Info: 05098 PSRDA70-4 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The PSRDA70-4 is an ultra low capacitance steering diode array designed to protect circuit applications from the effects of Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Its ultra low capacitance allows maintenance

PSRDA70-4

Abstract: 61000-4-5 surge
Contextual Info: 05098 PSRDA70-4 Only One Name Means ProTek’Tion ultra low capacitance steering diode array Description The PSRDA70-4 is an ultra low capacitance steering diode array designed to protect circuit applications from the effects of Electrostatic Discharge ESD and Electrical Fast Transients (EFT). Its ultra low capacitance allows maintenance

tunnel diode

Abstract: lm719 IN3717 tunnel diode application 1N3717 1N2719 1N3719 TUNNEL DIODE d 220 1N3713 1N3715
Contextual Info: I — fdlL-s-19500/269 NAVT IC2ctcber 196S bDLfTARV SPECIPfCATION SEMfC0NDUCT05f TYPES DEVICE, 1N3719, 1N3715, TuKNEL 1N3717, DIODE, 1N3719 AND 1N3721 . 1. SCOPE 1.1 Description. - TMsspecification cmer8tie deWlrquirements MIL-S-1 8500, except as otherwise

"Varactor Diode"

Abstract: BXY32 varactor diode X-band x5 frequency multiplier
Contextual Info: BXY32 SILICON PLANAR EPITAXIAL VARACTOR DIODE T E N T A T IV E D A TA Silicon planar epitaxial varactor diode exhibiting step recovery characteristics, especially suitable for high order frequency multiplier circuits up to X-band output frequency. It is a diffused silicon device and is mounted in a small double-ended ceram ic-m etal

CMEDA-61

Contextual Info: Central CMEDA-6Ì SURFACE MOUNT SUPERmini MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY Semiconductor Corp. FEATURES: • Four Monolithic Isolated diodes. • Fast Switching. • Matched Vp DESCRIPTION: The CENTRAL SEMICONDUCTOR CMEDA-6i is an

SOT-28

Abstract: marking code 18 surface mount diode
Contextual Info: CMEDA-6i SURFACE MOUNT SUPERmini MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY Central TM Semiconductor Corp. FEATURES: • Four Monolithic Isolated diodes. • Fast Switching. • Matched VF SOT-28 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMEDA-6i is an

Diodes

Abstract: RF Diode Design Guide
Contextual Info: RF Diode Design Guide Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,

Measurement of stray inductance for IGBT

Abstract: Hitachi DSA00281
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04023 R2 P1 MBN1800E17DD Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04023 R3 P1 MBN1800E17DD Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-12010 R1 MBM200H45E2-H P1 Preliminary Specification Silicon N-channel IGBT 4500V E2 version FEATURES  Low switching loss IGBT module.  Low noise due to ultra soft fast recovery diode.  Isolated heat sink terminal to base .

G15BB

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R5 P1 MBN500H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

diode byx 64 600

Abstract: MBN2400E17D
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-02007 R7 MBN2400E17D Silicon N-channel IGBT 1. FEATURES ∗ High speed, low loss IGBT module due to LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R3 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04010R6 MBM600E17D Silicon N-channel IGBT FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.

Contextual Info: Spec.No.IGBT-SP-06020R1 P1 IGBT MODULE MBN1800E17E Silicon N-channel IGBT 1. FEATURES ∗ Low noise, low loss IGBT module due to soft-LiPT Trench Technology ∗ Low noise due to ultra soft fast recovery diode. U-SFD ∗ High reverse recovery capability (HiRC)

Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R4 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.