DIODE CMC F 4 Search Results

Contextual Info: CMT55N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION FEATURES ‹ Vds=25V ‹ Advanced trench process technology ‹ RDS ON =6 mΩ (Max.) , VGS @10V, Ids@30A ‹ High Density Cell Design For Ultra Low On-Resistance ‹ RDS(ON)=9 mΩ (Max.), VGS @4.5V, Ids@30A

CMT35N03G

Abstract: TO-252 N-channel MOSFET Ultra Low voltage rds mosfet
Contextual Info: CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION FEATURES ‹ Vds=25V ‹ Advanced trench process technology ‹ RDS ON =8.5 mΩ (Max.) , VGS @10V, Ids@30A ‹ High Density Cell Design For Ultra Low On-Resistance ‹ RDS(ON)=13 mΩ (Max.), VGS @4.5V, Ids@30A

CMC lcd

Abstract: CMT9435G
Contextual Info: CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES ‹ VDS=-30V , ID=-5.3A ‹ Advanced trench process technology ‹ RDS ON , VGS@-10V , IDS@ -5.3A = 60mΩ ‹ High Density Cell Design For Ultra Low On-Resistance ‹ RDS(ON) , VGS@-4.5V , IDS@ -4.2A = 90mΩ

CMD1210

Contextual Info: ALPHA IND/ CTL MICROüJAVE □565303 OQQQGMO □ r OSE D T-Ô7 - / CMD SERIES GUNN DIODES Features • Available from 4 GHz through 110 GHz • High Efficiency • Low Noise • Maximum Output Power/Frequency Levels • Pulsed Devices with Several Watts

Contextual Info: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V

CMC lcd

Abstract: p-channel mosfet sot-23 P-Channel MOSFET 20V P-Channel Power MOSFET CMT2301 CMT2301GM233 CMT2301M233
Contextual Info: CMT2301 P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION FEATURES The CMT2301 is the P-Channel logic enhancement mode -20V/-2.3A ,RDS ON =130 mΩ@VGS=-4.5V power field effect transistors are produced using high cell -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V

tr/2088 RGB-5

Abstract: 2088 RGB-5
Contextual Info: REV ISIO NS . RIGHTS RESERVED LTR DESCRIPTION DATE LOGO CHANGE DWN 08MAÏ20I3 TY APVD KZ ~ ïï= 5: Q O', MAT E R I A L S : -HOUSING: HI GH T E MP E R A T U R E NYLON, BLACK, UL 9 4 V - 0 -SHIELD: 0.20mm T H I C K , BRASS P R E P L A T E D WI T H 1 . 2 7 / j m MI N S E M I - B R I G H T

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/9S/EÇ, BI-PDLAR LED PDLARITY PIN 11 PIN 12 CQLDR + □RANGE + GREEN —

diode 8a 600v

Abstract: CMPFCD86 CMPFCD86XN220
Contextual Info: CMPFCD86 PFC Diode 8A/600V FEATURES ‹ Fast switching for high efficiency ‹ Low noise ‹ Trr = 20ns ‹ Low reverse leakage current ‹ High voltage super FRD ‹ PFC application MECHANICAL DATA ‹ Case : Molded plastic TO-220AC / TO-220FP / SMC ‹ Epoxy : UL94V-0 rate flame retardant

diode 8a 600v

Abstract: CMPFCD86XN220
Contextual Info: CMPFCD86 PFC Diode 8A/600V FEATURES ‹ Fast switching for high efficiency ‹ Low noise ‹ Trr = 20ns ‹ Low reverse leakage current ‹ High voltage super FRD ‹ PFC application MECHANICAL DATA ‹ Case : Molded plastic TO-220AC / TO-220FP / SMC ‹ Epoxy : UL94V-0 rate flame retardant

CMPFCD86GN220

Contextual Info: CMPFCD86 PFC Diode 8A/600V FEATURES ‹ Fast switching for high efficiency ‹ Low noise ‹ Trr = 20ns ‹ Low reverse leakage current ‹ High voltage super FRD ‹ PFC application MECHANICAL DATA ‹ Case : Molded plastic TO-220AC / TO-220FP / SMC ‹ Epoxy : UL94V-0 rate flame retardant

Contextual Info: CMPFCD86 PFC Diode 8A/600V FEATURES ‹ Fast switching for high efficiency ‹ Low noise ‹ Trr = 20ns ‹ Low reverse leakage current ‹ High voltage super FRD ‹ PFC application MECHANICAL DATA ‹ Case : Molded plastic TO-220AC / TO-220FP ‹ Epoxy : UL94V-0 rate flame retardant

Contextual Info: CMT20N15 POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed to withstand high energy ! Robust High Voltage Termination in avalanche and commutation modes. The new energy ! Avalanche Energy Specified efficient design also offers a drain-to-source diode with a

CM6805

Contextual Info: CMPFCD86 PFC Diode 8A/600V FEATURES ‹ ‹ ‹ ‹ ‹ ‹ Fast switching for high efficiency Low noise Trr ~ 25ns Ultra low reverse leakage current High voltage ultra faster diode PFC application High inrush current K A CMPFCD86 (TO-220AC) K MECHANICAL DATA

S 170 MOSFET TRANSISTOR

Abstract: transistor w 431 PDF Datasheets CMT20N50 CMT20N50N3P td 6950
Contextual Info: CMT20N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ! Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ! Avalanche Energy Specified without degrading performance over time. In addition, this

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY* TD BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC. BI-POLAR LED POLARITY COLOR PIN 11 PIN 12 + □RANGE + GREEN — —

Contextual Info: REVISIONS . RIGHTS RESERVED LTR DESCRIPTION DATE LOGO CHANGE DWN 08MAÏ20I3 TY APVD KZ R J 4 5 MOD P L U G S E L E C T I V E S S S P R I NG M E M B E R /JA Q — ^C i CO -fc^ O - < CO O ', -< ? =n — ^ Z o CO CJl ^ 03 Ü <X> od A x RJ45 A , m LED SINGLE MAT E R I A L S :

CMT01N60

Abstract: CMT01N60GN251 CMT01N60GN252 CMT01N60GN92 CMT01N60N251 CMT01N60N252 CMT01N60N92
Contextual Info: CMT01N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this

Contextual Info: CMT02N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this

Field Effect Transistor CMT08N50

Abstract: CMT08N50 CMT08N50N220 CMT08N50N220FP
Contextual Info: CMT08N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this

Contextual Info: CMT14N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this

Contextual Info: CMT08N50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this

CMT01N60

Abstract: MOSFET
Contextual Info: CMT01N60 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this ‹

Logic Level N-Channel Power MOSFET

Abstract: CMT70N03
Contextual Info: CMT70N03 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES Buck Converter High Side Switch Low ON Resistance Other Applications Low Gate Charge Peak Current vs Pulse Width Curve VDSS RDS ON Typ. ID Inductive Switching Curves 30V 6.6mΩ 71A Improved UIS Ruggedness