DIODE CG Search Results

diode cross reference

Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Contextual Info: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE

SPL CG94

Abstract: CW laser diode 808 nm 039 opto
Contextual Info: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur

Contextual Info: Laser Diode on Submount 1.0 W cw Laser Diode in offener Bauform 1.0 W cw SPL CGxx_0 Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur

CG94

Abstract: Q62702-P1617 Q62702-P358
Contextual Info: Laser Diode on Submount 2.0 W cw Laser Diode in offener Bauform 2.0 W cw SPL CGxx Besondere Merkmale Features • Effiziente Strahlungsquelle für Dauerstrich- und gepulstem Betriebsmodus • Zuverlässige InGa Al As kompressiv verspannte Quantenfilm-Struktur

699h

Contextual Info: O rd e rin g n u m b e r: EN 699H , SAHYO SVC321SPA N 0 .6 9 9 H Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features • The SVC321SPA is a varactor diode with a good linearity and high capacitance ratio that is capable of

Contextual Info: □IXYS Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH10N60U1 IXGH10N60AU1 VCES ^C25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 MQ

Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH17N100U1 IXGH17N100AU1 v CES ^C25 V * CE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions v CES v CGR v GES v’ Td =25°C to ^ = 25°C to 150°C; Maximum Ratings 150°C

QAE 21.2

Contextual Info: v¥ Low V IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 ces 600 V 600 V ^C25 V ¥ C E sat 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR

200313B

Contextual Info: APPLICATION NOTE A Wideband General Purpose PIN Diode Attenuator Introduction PIN diode-based Automatic Gain Control AGC attenuators are commonly used in many broadband system applications such as cable or fiberoptic TV, wireless CDMA, etc. A popular attenuator

IRG4BC15UD

Contextual Info: PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

Contextual Info: BBY 55-05W Silicon Tuning Diode Preliminary data • Excellent linearity • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • Very low capacitance spread

Design with PIN diode alpha

Abstract: APN1003 SMP1307 SMP1307-011 silicon diode ideality factor ATTENUATOR AF PIN diode SPICE model Alpha Industries pin diodes SMP1307-011 spice model
Contextual Info: Application Note A Wideband General Purpose PIN Diode Attenuator APN1003 Introduction D3 RS3 RF Input The PIN diode is used as a current controlled resistance component in the PI network. PIN diodes are low cost, low distortion elements available in commonly used

aml 10 series

Abstract: Scans-001779
Contextual Info: DAF 40 DAF 4 0 Diode-R.F. pentode battery valve The D A F 40 is a diode-pentode for b a tte ry operation; th e p entode section is designed for R .F . an d I.F . am plification, th e diode section for d etectio n a n d A.G.C. A b a tte ry w ith a nom inal voltage of 1.4 V can be used for th e

Contextual Info: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current

Contextual Info: BBY 52-05W Infineon Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment R Pin Configuration BBY 52-05W S2s upon request 1 = A1 CM II Ordering Code

af amplifier

Abstract: type 42 pentode ebc41
Contextual Info: DAF 41 DAF 41 Battery type diode - A.F. pentode Fig. 1. The D A F 41 approxim ately full size . T he D A F 41 is a b a tte ry ty p e diode-pentode; th e p en to d e section can be used for A .F . a m ­ plification, th e diode section for detection or A.G.C. I ts filam en t is id en tical w ith th a t of

IRF7807D1

Contextual Info: PD- 93761 IRF7807D1 FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier

IRF7807D2

Contextual Info: PD- 93762 IRF7807D2 FETKY MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier

Contextual Info: International po-smnt IO R Rectifier IR F 7 4 2 1 D 1 preliminary FETKY MOSFET andf Schottky Diode • • • • Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation 5 T echnology SO-8 Footprint

IRF7321D2

Abstract: ed 77A DIODE
Contextual Info: PD- 91667C IRF7321D2 TM FETKY MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K

Contextual Info: SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET Using E Series Technoloy • Reduced trr, Qrr, and IRRM • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)

Contextual Info: SiHP24N65EF www.vishay.com Vishay Siliconix EF Series Power Fast Body Diode MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast Body Diode MOSFET using E Series Technology • Reduced Trr, Qrr, and Irrm • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)

LTC4416

Contextual Info: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES n n n n n n n n n n DESCRIPTION Low Loss Replacement for Power Diode Controls N-Channel MOSFET 0V to 18V Supply ORing or Holdup 0.5 s Turn-On and Turn-Off Time Undervoltage and Overvoltage Protection

st mosfet

Abstract: 12-PIN LTC4352 LTC4352C LTC4352CDD LTC4352H LTC4352I SBG1025L Si7336ADP LTC4352IMS#PBF
Contextual Info: LTC4352 Low Voltage Ideal Diode Controller with Monitoring Features n n n n n n n n n n Description Low Loss Replacement for Power Diode Controls N-Channel MOSFET 0V to 18V Supply ORing or Holdup 0.5 s Turn-On and Turn-Off Time Undervoltage and Overvoltage Protection