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    DIODE C13 Search Results

    DIODE C13 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE C13 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    R22A

    Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
    Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener


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    110vaczps60-3r22atransistor mtbf+8optocupler hand booktransistor mosfettransistor r1dr24 transistoroptocuplertransformer mtbfr18ar22e PDF

    transistor R1d

    Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
    Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener


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    110vaczps40-3transistor r1dtransistor r1a+8diode fr 105transistor 106 d1r22amtbf-zps400411278540r18a217f PDF

    zd1 1014

    Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
    Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky


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    110vaczpd40-512zd1 1014217f+5c10ac12acapacitor ceramicoptocuplertransistor mtbf PDF

    217F

    Abstract: resistor film transistor MTBF L2 diode 725
    Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    zpsa40-5217fresistor filmtransistor mtbf+1l2 diode 725 PDF

    ZPSA60-15

    Abstract: FR 306 Diode 217F
    Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    zpsa60-15fr 306 diode217f PDF

    DIODE 4008

    Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
    Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    zpsa40-12diode 4008diode" 4008217f+4capacitor electrolyticzener3optocupler105 capacitor PDF

    217F

    Abstract: ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor
    Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-12 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    zpsa60-12217fcapacitor variable ceramiczd1 1014+1105 capacitor PDF

    variable resistor 502

    Abstract: OPTOCUPLER HAND BOOK 217F ZPSA40-24 zpsa40 capacitor Electrolytic
    Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-24 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode, Fast 1 D2 6.1 Diode,General 1 BR1 6.1 Diode,General


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    zpsa40-24variable resistor 502optocupler hand book217f+2zpsa40capacitor electrolytic PDF

    731 zener diode

    Abstract: FR 309 diode 217F diode zener c5 R27A
    Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General


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    zpsa60-5731 zener diodefr 309 diode217f+2diode zener c5r27a PDF

    CON at36a

    Abstract: AT36A DIODE d2 DIODE A4 STEVAL-ISV004V2 DIODE d3 D1 diode 026l2 STEVAL-IS DSASW003737
    Contextual Info: 5 4 TP1 3 2 VIN V_OUT C13 4.7uF D3 DIODE VIN 1 V_OUT C12 4.7uF C6 4.7uF TEST POINT VCC D2 C5 D4 1uF TRISIL TEST POINT V_OUT D1 DIODE 1 1 TP2 C11 1uF D5 TRISIL DIODE TP3 1 D CB1 C1 22nF VIN CB3 L1 C3 22nF L3 47uH VIN 47uH L3 2 2 VIN V_OUT L1 D TEST POINT J35


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    220pfat36a100khzsteval-isv004v2+8con at36adiode d2diode a4diode d3d1 diode026l2steval-isdsasw003737 PDF

    PDM5001

    Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
    Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH


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    c3557ph1503ph150pdm5001+9pdt400n16pah60n8cmphmb50e6clpht250n16pht400n16pd100kn16pah100n8cmpt76s16pat400n16 PDF

    Melles Griot Laser Diode driver

    Abstract: SPLPL90_0 diode laser power supply melles griot Melles Griot 4,7uF 50v R1720 1000X 10UF 2N7002 47UF
    Contextual Info: EVLDO2 Evaluation Board For The IXLDO2 Ultra High Speed Laser Diode Driver IC. Introduction The IXLDO2 laser diode driver is designed to drive single junction laser diodes in a differential fashion. This technique provides the highest possible slew rate across the diode. The IXLDO2 is capable


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    17mhz600ps10mhzmelles griot laser diode driver+9splpl90_0diode laser power supply melles griotmelles griot4,7uf 50vr17201000x10uf2n700247uf PDF

    Contextual Info: LASER DIODE INC IS 3302*105 D O O Q M T l b ILAD T—47 —07 LH6Û SERIES LASER DIODE INC. HYBRID LASER DIODE AND DRIVER FOR PULSE OPERATIONS FEATURES ► Laser Chip and Driver Electronics in one Hermetic TO-5 type Package ► High Efficiency Operation ► Pulse Widths from 10ns to 50ns


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    904nm PDF

    FS75R12W2T4

    Contextual Info: Technische Information / technical information FS75R12W2T4_B11 IGBT-Module IGBT-modules EasyPACK 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPACK 2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode


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    fs75r12w2t4 PDF

    MADR-010574-001SMB

    Contextual Info: MADR-010574 20V to 250V Driver for High Power PIN Diode Switches Rev. V1 Functional Schematic Features •         20 V to 250 V Back Bias in Off State 200 mA Series Diode Bias Current at +25°C 50 mA Shunt Diode Bias Current at +25°C


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    madr-010574qfn-16ldmadr-010574-001smb PDF

    IFS100B12N3E4

    Abstract: C5363 IFS100B12N3E4B
    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current


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    ifs100b12n3e4428654f4bcfc24e32dc+8bcfc26e32dc66734f9c46e4bc336941231423567896abc5363ifs100b12n3e4b PDF

    IFS150B12N3T4_B31

    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS150B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    ifs150b12n3t4e1322ff326dcfc26e1+62313fd361341231423567896ab54f36c4112cd3567896beifs150b12n3t4_b31 PDF

    474F3

    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt


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    ifs75b12n3e4e1322ff326dcfc26e1+62313fd361341231423567896ab54f36c4112cd3567896be474f3 PDF

    1B89

    Abstract: RT-70
    Contextual Info: N E C ELE CTRONICS INC b5E ]> • b4E7525 00300^1 3QT ■ NECE DATA SHEET NEC PHOTO DIODE N D L 5405L ELECTRON DEVICE 1 0 0 0 t o i 600 nm OPTICAL FIBER COMMUNICATIONS 0 8 0 um InGaAs PIN PHOTO DIODE DESCRIPTION NDL5405L is an InGaAs PIN photo diode with micro lens for a light detector of long wavelength transmission systems. It


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    b4e75255405lndl5405lrl5500c+8l5500pl5500ndl5405l5405ll5510cl5405p1b89rt-70 PDF

    LTC4098-3.6

    Abstract: se666 k3332 edt0145.6 SEH-01T-P0.6
    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B32 MIPAQ base Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and current sense


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    ifs75b12n3e4428654f4bcfc24e32dc+11bcfc26e32dc66734f9c46e4327c531231423567896abltc4098-3.6se666k3332edt0145.6seh-01t-p0.6 PDF

    AK2573A

    Abstract: AK2573AVB C101 620CH
    Contextual Info: ASAHI KASEI [AK2573A] AK2573A 125M / 156M Laser Diode Driver + APC Features - 1 chip 125M / 156M Laser Diode Driver LDD + Digital APC (APC_FF and APC_FB) - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor (APC_FF)


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    ak2573ams0189-e-01ak2573avbc101+1620ch PDF

    marking code C15

    Abstract: AK2574 AK2574VB R132 R133
    Contextual Info: ASAHI KASEI [AK2574] AK2574 156M Laser Diode Driver + APC for Burst Mode Features - 156M Laser Diode Driver for burst mode application - BIAS current switching - Programmable laser BIAS and modulation current controlled by an on-chip temperature sensor APC_FF


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    ak2574ms0266-e-00marking code c15ak2574vb+2r132r133 PDF

    LTC4098-3.6

    Abstract: A20-LCD15.6 SXA-01GW-P0.6
    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


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    ifs75b12n3e4428654f4d3265ecfc24+9b32dccd3289ecfc26b32dc6c36b31231423567896abltc4098-3.6a20-lcd15.6sxa-01gw-p0.6 PDF

    diode F4 6A

    Abstract: 4F36F123
    Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B39 MIPAQ base Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and current


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    ifs100b12n3e4428654f4d3264ecfc24+8b32dcd3692ccd3288ecfc26b32dc66934fdiode f4 6a4f36f123 PDF