DIODE C13 Search Results

R22A

Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

transistor R1d

Abstract: transistor R1A diode FR 105 TRANSISTOR 106 d1 R22A MTBF-ZPS40 04112 78540 R18A 217F
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS40-3 Ver: V1.1 Date: 21/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener

zd1 1014

Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky

217F

Abstract: resistor film transistor MTBF L2 diode 725
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

ZPSA60-15

Abstract: FR 306 Diode 217F
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

DIODE 4008

Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

731 zener diode

Abstract: FR 309 diode 217F diode zener c5 R27A
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

CON at36a

Abstract: AT36A DIODE d2 DIODE A4 STEVAL-ISV004V2 DIODE d3 D1 diode 026l2 STEVAL-IS DSASW003737
Contextual Info: 5 4 TP1 3 2 VIN V_OUT C13 4.7uF D3 DIODE VIN 1 V_OUT C12 4.7uF C6 4.7uF TEST POINT VCC D2 C5 D4 1uF TRISIL TEST POINT V_OUT D1 DIODE 1 1 TP2 C11 1uF D5 TRISIL DIODE TP3 1 D CB1 C1 22nF VIN CB3 L1 C3 22nF L3 47uH VIN 47uH L3 2 2 VIN V_OUT L1 D TEST POINT J35

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

Melles Griot Laser Diode driver

Abstract: SPLPL90_0 diode laser power supply melles griot Melles Griot 4,7uF 50v R1720 1000X 10UF 2N7002 47UF
Contextual Info: EVLDO2 Evaluation Board For The IXLDO2 Ultra High Speed Laser Diode Driver IC. Introduction The IXLDO2 laser diode driver is designed to drive single junction laser diodes in a differential fashion. This technique provides the highest possible slew rate across the diode. The IXLDO2 is capable

Contextual Info: LASER DIODE INC IS 3302*105 D O O Q M T l b ILAD T—47 —07 LH6Û SERIES LASER DIODE INC. HYBRID LASER DIODE AND DRIVER FOR PULSE OPERATIONS FEATURES ► Laser Chip and Driver Electronics in one Hermetic TO-5 type Package ► High Efficiency Operation ► Pulse Widths from 10ns to 50ns

FS75R12W2T4

Contextual Info: Technische Information / technical information FS75R12W2T4_B11 IGBT-Module IGBT-modules EasyPACK 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPACK 2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode

MA4P504-1072T

Abstract: MADR-010547-001SMB MADR-010574 MADR-010574-001SMB QFN-16ld MADR-010574-000
Contextual Info: MADR-010574 20V to 250V Driver for High Power PIN Diode Switches Rev. V1 Functional Schematic Features •         20 V to 250 V Back Bias in Off State 200 mA Series Diode Bias Current at +25°C 50 mA Shunt Diode Bias Current at +25°C

MADR-010574-001SMB

Contextual Info: MADR-010574 20V to 250V Driver for High Power PIN Diode Switches Rev. V1 Functional Schematic Features •         20 V to 250 V Back Bias in Off State 200 mA Series Diode Bias Current at +25°C 50 mA Shunt Diode Bias Current at +25°C

0805 footprint

Abstract: AN-1356 GRM216R61E105KA12B LM2743 TSSOP14 9926b DIODE footprint
Contextual Info: National Semiconductor Application Note 1356 Ricardo Capetillo October 2005 Introduction due to the lower forward drop than the low side MOSFET body diode conducting during the anti-shoot through period. Select a Schottky diode that maintains a forward drop

transistor c114

Abstract: c102 TRANSISTOR TRANSISTOR c105 transistor c114 chip c104 TRANSISTOR C114 transistor c107 TRANSISTOR c106 TRANSISTOR TRANSISTOR C107 c101 TRANSISTOR
Contextual Info: Intel740 Graphics Accelerator Reference Card BOM 3/30/98 QTY 5 3 6 48 Component Type Diode Pack Diode Pack Capacitor Capacitor Value N/A N/A 1UF .1UF Manufacturer Motorola Motorola TDK KEMET Part Number BAV99LT1 BAV99LT1 C3216X7R1C105KT000N C0805C104K5RAC

Contextual Info: 1300 nm Series 2.5 Gbps CWDM Laser Diode Modules C-13XX-DFB2.5-XD-SXXXX Features • Uncooled laser diode with MQW structure • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode

Contextual Info: DEMO MANUAL DC1899A LTC4228-1/LTC4228-2 Dual Ideal Diode and Hot Swap Controller DESCRIPTION Demonstration circuit 1899A controls two independent power rail circuits each with Hot Swap and ideal diode functionality provided by the LTC4228-1/LTC4228-2 dual

High Voltage 13001

Abstract: tr 13001 X 13001 13001 C-13-001-E-HG-G5 LuminentOIC tr x 13001
Contextual Info: 1310nm Laser Diode C-13-001-E-XG Features • Uncooled laser diode with MQW structure • 5mW CW operation at –40 to +85ºC • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode

High Voltage 13001

Contextual Info: 1310nm Laser Diode C-13-001-E-LAX Features • Uncooled laser diode with MQW structure • 5mW CW operation at –40 to +85ºC • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

TOSA 10G DFB

Abstract: TOSA 1310 10G laser module 10G direct TOSA 10G 1310nm laser diode for 10Gbps 10 gb laser diode 10G TOSA TOSA 10G 15 10 gb laser diode 1310 nm C-13-DFB10-TK-SXCMI
Contextual Info: 10Gbps 1310 nm MQW-DFB Laser Diode Module-Differential TOSA C-13-DFB10-TK-SXCMI -01 Features • Uncooled DFB Laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR

C-13-DFB2

Abstract: GR-468-CORE LuminentOIC, Inc. C-13
Contextual Info: 1310nm 2.5G MQW-DFB Laser Diode Module C-13-DFB2.5-XX-SXXXX/XXX-X-XX Features • Un-cooled laser diode with MQW structure • High temperature operation without active cooling • Hermetically sealed active component • Built-in InGaAs monitor photodiode