DIODE C12 Search Results

Scans-0017402

Abstract: general electric bulb thermometer pf 9sg
Contextual Info: — PRODUCT INFORMATION — Page 1 Diode TUBES FOR TV DAMPING DIODE APPLICATIONS LOW TUBE DROP COLOR TV TYPE 6,500 VOLTS DC AND PEAK 400 MILLIAMPERES DC The 34DK3 is a heater-cathode type diode intended for service as the damping diode in the horizontal—deflection

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAT86 DO-34 Glass Package Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION

Contextual Info: PD - 94385A IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

420 Diode

Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IGBT 900v 60a

Contextual Info: PD - 95617 IRGB5B120KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

800v irf

Abstract: IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp
Contextual Info: PD - 94386A IRGP8B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

melf diode code

Abstract: glass mini melf diode mini melf diode Schottky melf BAS85
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR SCHOTTKY BARRIER DIODE BAS85 SOD - 80C Mini MELF LL- 34 Polarity: Cathode is indicated by a grey band Hermetically Sealed, Glass Silicon Diode Ultra High Speed Switching Diode

IRGPS40B120UD

Abstract: ic MARKING QG IRFPS37N50A 1000V 20A transistor
Contextual Info: PD- 94240A IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRGB5B120KD

Abstract: TF010
Contextual Info: PD - 94385F IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

420 Diode

Abstract: ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD
Contextual Info: PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 94385B IRGB5B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

Scans-0017327

Abstract: general electric IRCON INFRARED
Contextual Info: -P R O D U C T INFORMATION — Page 1 E L E C T R O N IC Diode INNOVATIONS\ t IN A C T I O N i ~r ß TUBES FOR TV DAMPING DIODE APPLICATIONS COLOR TV TYPE LOW TUBE DROP 6,500 VOLTS DC AND PEAK 400 MILLIAMPERES DC The 19DK3 is a heater—cathode type diode intended for service as the damping diode in the horizontal-deflection

25dk3

Abstract: Scans-0017368 general electric JI88
Contextual Info: — PRODUCT INFORMATION — EZECTBOm C Diode INNOVATIONS IN ACTION ~ TUBES Page 1 3 -7 3 FOR TV DAMPING DIODE APPLICATIONS • COLOR TV TYPE LOW TUBE DROP ■ 6,500 VOLTS DC AND PEAK 400 MILLIAMPERES DC The 25DK3 is a heater-cathode type diode intended for service as the damping diode in the horizontaldeflection c irc u it of color te le visio n receivers. It u tiliz e s a unique heater-cathode insulating system making

MA4P504-1072T

Abstract: MADR-010547-001SMB MADR-010574 MADR-010574-001SMB QFN-16ld MADR-010574-000
Contextual Info: MADR-010574 20V to 250V Driver for High Power PIN Diode Switches Rev. V1 Functional Schematic Features •         20 V to 250 V Back Bias in Off State 200 mA Series Diode Bias Current at +25°C 50 mA Shunt Diode Bias Current at +25°C

1N4148w SOD-123

Abstract: 1N4148W a2 1N4148W continental SOD123
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N4148W SOD-123 PLASTIC PCAKAGE 1N4148W= A2 with cathode band Fast Switching Diode ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL SWITCHING DIODE 1N4148W SOD-123 PLASTIC PCAKAGE 1N4148W= A2 with cathode band Fast Switching Diode ABSOLUTE MAXIMUM RATINGS Ta=25ºC DESCRIPTION

Contextual Info: IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified l RoHs Compliant Containing No Lead and Bromide ‚ l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible 

Contextual Info: TSS42U/43U 0.2 Amp Surface Mount Schottky Barrier Diode Small Signal Diode 0603 W T L Features C —Designed for mounting on small surface —Extremely thin / leadless package D —Low capacitance —Low forward voltage drop —Pb free version and RoHS compliant

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 SOT-323 Plastic-Encapsulate DIODE BZX84C2V4W-BZX84C39W ZENER DIODE FEATURES z Planar Die Construction z 200mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

mini melf package details

Abstract: CLLDB3 DIAC 220v
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON DIAC BIDIRECTIONAL TRIGGER DIODE GLASS PASSIVATED PNPN DEVICE CLLDB3 SOD - 80C Mini MELF LL-34 Functioning as a Trigger Diode with a Fixed Voltage Reference, CLLDB3 can be

diode zener Z11

Abstract: Y415 Y6 ZENER DIODE C18 zener Zener diode z12 15 BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V9
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

kpe 153

Abstract: KPB datasheet BZX84C2V4W BZX84C2V7W BZX84C3V0W BZX84C3V3W BZX84C3V6W BZX84C3V9W BZX84C4V3W BZX84C4V7W
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE BZX84C2V4W-BZX84C39W ZENER SOT-323 DIODE FEATURES z Planar Die Construction z 200mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation

6C12

Abstract: FF150R12KE3G
Contextual Info: Technische Information / technical information FF150R12KE3G IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode 62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

transistor D 5032

Abstract: 12 H 595 IRGPS60B120KD igbt 60a IGBT 900v 60a A1508 IGBT 1200V 60A Ir 900v 60a IRFPS37N50A 120A8
Contextual Info: PD- 94239B IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.