DIODE C 2479 Search Results

BAT85

Contextual Info: TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com BAT85 SCHOTTKY BARRIER DIODE FEATURES : DO - 35 Glass DO-204AH • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive

BAT86

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 BAT86 SCHOTTKY BARRIER DIODE FEATURES : DO - 35 Glass DO-204AH • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring

BR50

Abstract: GBPC15005 GBPC1510
Contextual Info: TH97/2478 GBPC15005 - GBPC1510 IATF 0060636 SGS TH07/1033 GLASS PASSIVATED SINGLEPHASE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 15 Amperes BR50 0.728 18.50 0.688(17.40) FEATURES : * * * * * * * TH09/2479 Glass passivated junction chip High surge current capability

diode bridge 3510

Abstract: diode bridge 3506 diode bridge 3504 BR50 GBPC35005 GBPC3510 diode 1137
Contextual Info: TH97/2478 GBPC35005 - GBPC3510 IATF 0060636 SGS TH07/1033 GLASS PASSIVATED SINGLEPHASE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 35 Amperes BR50 0.728 18.50 0.688(17.40) FEATURES : * * * * * * * TH09/2479 Glass passivated junction chip High surge current capability

HSS100

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com HSS100 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Very Low IR • Low VF and high efficiency. • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA :

HSS102

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com HSS102 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Very Low IR • Low VF and high efficiency. • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA :

Contextual Info: TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com 1SS165 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Low forward voltage • High breakdown voltage • Low diode capacitance. • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0)

1SS286

Contextual Info: TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 www.eicsemi.com 1SS286 SCHOTTKY BARRIER DIODE DO - 34 Glass FEATURES : • Very Low IR • Low VF and high efficiency. • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode Mark MECHANICAL DATA :

2478 diode

Abstract: BAS85 BAT85 v1608
Contextual Info: TH97/2478 BAS85 TH09/2479 IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark * For general purpose applications. * This diode features low turn-on voltage. * This device isprotected by a PN junction guard guard ring against excessive voltage, such as

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com BAT81 - BAT83 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER DIODES DO - 34 Glass FEATURES : • Low forward voltage • High breakdown voltage • Guard ring protected • Hermetically-sealed leaded glass package • Low diode capacitance.

BAS86

Abstract: BAT86
Contextual Info: TH97/2478 BAS86 TH09/2479 IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic

BAT46

Contextual Info: TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com BAT46 SCHOTTKY BARRIER DIODE DO - 35 Glass DO-204AH FEATURES : • For general purpose applications. • This diode features very low turn-on voltage and fast switching. This device is protected by a PN

BAX18

Contextual Info: TH97/2478 www.eicsemi.com BAX18 IATF 0113686 SGS TH07/1033 TH09/2479 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V

BAT48

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 BAT48 SCHOTTKY BARRIER DIODE FEATURES : DO - 35 Glass DO-204AH • For general purpose applications • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a

Contextual Info: TH09/2479 TH97/2478 RBV600D - RBV610D IATF 0113686 SGS TH07/1033 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 6.0 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 Φ 3.2 ± 0.1 + ~~ 1.0 ± 0.1 10 7.5 7.5 ± 0.2 ±0.2 ±0.2 MECHANICAL DATA : * Case : Reliable low cost construction

FKBP200

Abstract: FKBP210
Contextual Info: TH97/2478 FKBP200 - FKBP210 IATF 0060636 SGS TH07/1033 FAST RECOVERY BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 2.0 Amperes KBP 0.59 14.9 0.57 (14.5) FEATURES : * * * * * * * * TH09/2479 High case dielectric strength of 2000 VDC High surge current capability

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com SHV- 05J HIGH VOLTAGE RECTIFIER DIODE DO - 41 PRV : 2500 Volts Io : 30 mA FEATURES : * * * * * * * * IATF 0113686 SGS TH07/1033 Glass passivated junction chip High voltage capability High surge current capability High reliability

"MARKING CODE 76"

Abstract: marking code sgs BAS70-05 marking code diode 04 BAS70 BAS70-04 BAS70-06 diode marking code 15
Contextual Info: TH97/2478 BAS70/-04/-05/-06 TH09/2479 IATF 0060636 SGS TH07/1033 SMALL SIGNAL SCHOTTKY DIODE, SINGLE & DUAL SOT-23 0.100 0.013 1.40 0.95 0.50 0.35 FEATURES : 3.10 2.70 0.19 0.08 * These diodes feature very low turn-on voltage * Fast switching * These devices are protected by a PN junction

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com BYG20D - BYG20J IATF 0113686 SGS TH07/1033 ULTRAFAST AVALANCHE RECTIFIERS PRV : 200 - 600 Volts Io : 1.5 Amperes SMA 2.3 2.1 1.5 1.1 Glass passivated junction Low profile package Ideal for automated placement Low reverse current

1N4148W

Abstract: 1N4148W_ sgs marking code marking code sgs
Contextual Info: TH97/2478 1N4148W TH09/2479 IATF 0060636 SGS TH07/1033 SMALL SIGNAL FAST SWITCHING DIODE SOD-123 PRV : 100 Volts IO : 150 mA 1.65 1.55 0.6 0.5 2.7 2.6 FEATURES : 1.15 1.05 0.135 0.127 * Silicon Epitaxial Planar Diode * Fast switching diodes. * Pb / RoHS Free

AKBP200

Abstract: AKBP210
Contextual Info: TH97/2478 AKBP200 - AKBP210 IATF 0060636 SGS TH07/1033 AVALANCHE BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 2.0 Amperes KBP 0.59 14.9 0.57 (14.5) FEATURES : * * * * * * * TH09/2479 High case dielectric strength High surge current capability High reliability

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com SHV- 04 HIGH VOLTAGE RECTIFIER DIODE DO - 41 PRV : 4000 Volts Io : 2 mA FEATURES : * * * * * * IATF 0113686 SGS TH07/1033 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99) Glass passivated junction chip High voltage capability

RD2A

Abstract: 2478 diode
Contextual Info: TH97/2478 RD2A TH09/2479 IATF 0060636 SGS TH07/1033 ULTRA FAST RECTIFIER DIODE D2A PRV : 600 Volts Io : 1.2 Amperes 1.00 25.4 MIN. 0.161 (4.1) 0.154 (3.9) FEATURES : 0.284 (7.2) 0.268 (6.8) * Glass passivated junction chip * Fast switching for high efficiency

BYX134PL

Contextual Info: TH09/2479 TH97/2478 www.eicsemi.com BYX134PL IATF 0113686 SGS TH07/1033 HIGH VOLTAGE AVALANCHE DIODE D2 PRV : 4000 Volts Io : 50mA FEATURES : * High maximum operating temperature * Excellent stability * High reliability * Low reverse current * Pb / RoHS Free