DIODE C 10 PH Search Results

SSCDA05HE

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10

Bridge diode 35 amps

Abstract: DIODE 35 S469-05 S469
Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 1000 10 6 100

S25A20FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 200 16 10 125

STDA05HE

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10

S25A40FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 400 16 10 125

DIODE 35

Abstract: S469-04
Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 800 10 6 100

S25A60FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 600 16 10 125

S10A10FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 100 10 7.5

S25A10FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 100 16 10 125

S10A05FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10 7.5 100

f10nc15m

Abstract: F10NC15 SF10NC15M marking WMM SF-10N
Contextual Info: Schottky Barrier Diode Twin Diode SF 10 N C 15 M Wtm OUTLINE 150 V 10 A Feature • Tj=150°C • Tj=150°C • • Full Molded 7 lÆ -JU K • fîlR=0.2mA • Low lR=0.2mA • if & f lÆ S Ê ê C U C C U • « 1 IÎE 2kV«E • Resistance for thermal run-away

KD 472 M mov

Abstract: TM 0134 led driver triac tic 226 q 391 2 amp triac driver opto triac tic 109
Contextual Info: MOTOROLA Order this document by MQC2R60-10/D SEMICONDUCTOR TECHNICAL DATA Advance Information M O C 2R 60-10* M O C 2R 60-15 POWER OPTO Isolator 2 Amp Random-Phase Triac Output * Motorola Preferred Devices This device consists of a gallium arsenide infrared emitting diode optically

10 Gbps TOSA

Abstract: dfb laser diode
Contextual Info: 10 Gbps 1310 nm MQW DFB Laser Diode Modules-TOSA PRELIMINARY C-13-DFB10-TX-SSC2 Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR

Contextual Info: s e MIKROn SKiiP 292 GH 170 - 273 CTV Absolute Maximum Ratings Symbol |Conditions1> IGBT & Inverse Diode VcES V c c 9 Operating D C link voltage lc Theatsink T , 3' IGBT & Diode A C, 1 min. V is o i4 If ~ 25 C = 25 °C Theatsink —25 °C; tp < 1 ms tp = 10 ms; sin,; Tj = 150 °C

Photo Diode LED

Abstract: Diode 5013M1C LED 10mm 5013M1D M2 DIODE diode led led 8mm "Silicon Black" LED SMD
Contextual Info: Elecsound LED Series Products Photo Diode LED Datasheet Chip BVCEO VCE IC ON Rise & Fall Part Number Ee=mW/c Material Lens Color Min.(V) 5013M1C Silicon Water Clear 30 1 0.4 5013M1D Silicon Black 30 1 0.4 m2 Max.(V) Ee=mW/c Min.(V) Time(µs) 1 0.7 10/10 1

10 Gbps TOSA

Abstract: C-13-010-TX-SSC2
Contextual Info: 10 Gbps 1310 nm MQW FP Laser Diode Modules-TOSA PRELIMINARY C-13-010-TX-SSC2 Features • Uncooled FP laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode Packaging • Integrated 4-pin TO-18 TOSA package, with built-in isolator

Contextual Info: TOSHIBA 10 J L2 C 4 8 A #U 10 J L2 C 48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current

dl520

Contextual Info: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission

850nm LED

Abstract: LED 850nm LED 850nm 60mA 5278 an 5278
Contextual Info: P/N: C-85-1315T-09-XX 850nm LED Diode Transmitter Features l Light emitting diode with multi-quantum-well structure l Uncooled operation at -10~+85° C l For 50/125um Multi-mode Application Packaging l 8 Pin Package with ST Port Application l Design for fiber optic networks

HVL147M

Abstract: PUSF0012ZA-A RKP413KS
Contextual Info: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)

mark M7

Contextual Info: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)

Contextual Info: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)

Contextual Info: RKP411KS Composite Pin Diode for Antenna Switching REJ03G1574-0200 Rev.2.00 Sep 10, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)

Contextual Info: RKP411KS Composite Pin Diode for Antenna Switching REJ03G1574-0200 Rev.2.00 Sep 10, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)