DIODE C 10 PH Search Results

SSCDA05HE

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10

STDA05HE

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10

10 Gbps TOSA

Abstract: dfb laser diode
Contextual Info: 10 Gbps 1310 nm MQW DFB Laser Diode Modules-TOSA PRELIMINARY C-13-DFB10-TX-SSC2 Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR

10 Gbps TOSA

Abstract: C-13-010-TX-SSC2
Contextual Info: 10 Gbps 1310 nm MQW FP Laser Diode Modules-TOSA PRELIMINARY C-13-010-TX-SSC2 Features • Uncooled FP laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode Packaging • Integrated 4-pin TO-18 TOSA package, with built-in isolator

dl520

Contextual Info: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission

850nm LED

Abstract: LED 850nm LED 850nm 60mA 5278 an 5278
Contextual Info: P/N: C-85-1315T-09-XX 850nm LED Diode Transmitter Features l Light emitting diode with multi-quantum-well structure l Uncooled operation at -10~+85° C l For 50/125um Multi-mode Application Packaging l 8 Pin Package with ST Port Application l Design for fiber optic networks

Contextual Info: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)

Contextual Info: RKP411KS Composite Pin Diode for Antenna Switching REJ03G1574-0200 Rev.2.00 Sep 10, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)

Contextual Info: SK 10 BGD 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter Q$RS E$ E$YZ QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$YZL M ; E$0%&P *' L W &- C¥ Diode - Inverter SEMITOP 3 1-phase bridge rectifier +

DAiode

Abstract: 650nm 50mw
Contextual Info: TO SHIBA TOLD9441 M C TO SHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 10 LD 0 3 V/ 0Ì) PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

dfb10

Contextual Info: 10 Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TJ-SSC2I Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for SC connector

10 Gbps TOSA

Contextual Info: 10 Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TJ-SLC2I Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for LC connector

Contextual Info: P/N: C-13-1315T-10-XX 1310nm Laser Diode Transmitter Features l Laser diode with multi-quantum-well structure l Un-cooled operation at -40~+85° C l For Single-mode Application l High Optical Power l High Speed Packaging l 8 Pin Package with ST Port l The label of series number is put at the back of the device

Contextual Info: P/N: C-13-1315C-10-XX 1310nm Laser Diode Transmitter Features l Laser diode with multi-quantum-well structure l Un-cooled operation at -40~+85° C l For Single-mode Application l High Optical Power l High Speed Packaging l 8 Pin Package with SC Port l The label of series number is put at the back of the device

TIL111 equivalent

Abstract: TIL119 equivalent TIL112 equivalent TIL112 TIL119 MCT2E equivalent TIL 143 TIL113 H11A2 H11B1
Contextual Info: 1-20 Max Ratings @ T * = 25°C Device No. Output Pd mW T ransistor >C v CEO mA V Coupled C haracteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @Vce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

s2rc40r

Abstract: S2RC10 SHINDENGEN DIODE color code diode
Contextual Info: SHINDENGEN ] » TENTATIVE <y No.T J320 1.8A S 2R C S 2R C 10 —S2R C 6 0 INCOMBUSTIBLE CENTER-TAPPED SILICON DIODE STACKS Features Dimensions 1. Use o f a high-quality incombustible plastic for molding gives these T y p e c o lo r oode ( I p la c e )

6DI30Z-100

Abstract: 2di100z-100 1DI200Z-120 1DI200Z-100 6DI30Z-120 M106 M613 1DI300Z-100 2DI150Z-100 2DI30Z-100
Contextual Info: Z-SERIES DARLINGTON MODULES <§ Ratings and Characteristics VoltageRating Type 10 • Part Number V cbo V Vceo (V) C ollectoi Current VcEX(sua{ (cont.) 00 Ic Thermal Resistance Rth(j -c> (A) °C/W(max) Trans. Diode DCCurrentGain SwitchlngTlmes(max.) Hfe

Contextual Info: 3 STACK PULSED LASER DIODE L11348-307-05 FEATURES Peak Output Power : Fep 21 W Peak Emission Wavelength : 870 nm ± 10 nm Emitting Area Size : 70 mm x 10 mm APPLICATIONS Laser Range Finder Security ABSOLUTE MAXIMUM RATINGS Top(c = 25 °C) Symbol Value Unit

Contextual Info: 3 STACK PULSED LASER DIODE L11348-330-04 FEATURES Peak Output Power : Fep 90 W Peak Emission Wavelength : 870 nm ± 10 nm Emitting Area Size : 300 mm x 10 mm APPLICATIONS Laser Range Finder Security ABSOLUTE MAXIMUM RATINGS Top(c = 25 °C) Symbol Value Unit

SOD523 footprint

Abstract: BAS69-04WFILM BAS69KFILM bas69-04w BAS69 BAS69-05WFILM BAS69-06WFILM BAS69-07P6FILM BAS69-09P6FILM BAS69WFILM
Contextual Info: BAS69 Series Low capacitance small signal Schottky diodes Main product characteristics IF BAS69KFILM Single 10 mA VRRM 15 V C (typ) <1 pF Tj (max) 150° C SOD-523 Features and benefits BAS69WFILM (Single) • Low diode capacitance ■ Designed for RF applications

Telefunken u 257

Contextual Info: Temic TCDTlllO G S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The TCDTll 10(G) consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a

Contextual Info: TOSHIBA TOLD9441 MD TO SHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 10 0 3 V/ LD ^ (5Ì) PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

noise diode

Abstract: K51A Scans-0017953
Contextual Info: K51A NOISE DIODE Rare gas filled noise diode for use in waveguide system s in the 10 cm wave band QUICK REFERENCE DATA Noise level above 290 °K F Ignition voltage v ign > Anode cu rren t la = max. 17. 58 dB 6000 V 300 mA HEATING: d ire c t, p ara llel supply

Contextual Info: RKP405KS Composite Pin Diode for Antenna Switching REJ03G1543-0100 Rev.1.00 Apr 20, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)