DIODE C 10 PH Search Results

SSCDA05HE

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10

Bridge diode 35 amps

Abstract: DIODE 35 S469-05 S469
Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 1000 10 6 100

S25A20FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 200 16 10 125

STDA05HE

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Center Tap/Double Assembly View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10

S25A40FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 400 16 10 125

DIODE 35

Abstract: S469-04
Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 800 10 6 100

S25A60FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 600 16 10 125

S10A10FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 100 10 7.5

S25A10FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 100 16 10 125

S10A05FR

Contextual Info: Part Number Search: Diode Assemblies- Single Phase, Three Phase Product Specifications Product Group: Diode Assemblies, Single Phase Bridge View Parametric Table Type Number PIV Volts Io Max@55 deg C (Amps) Io Max@100 deg C (Amps) IFSM (Amps) 50 10 7.5 100

KD 472 M mov

Abstract: TM 0134 led driver triac tic 226 q 391 2 amp triac driver opto triac tic 109
Contextual Info: MOTOROLA Order this document by MQC2R60-10/D SEMICONDUCTOR TECHNICAL DATA Advance Information M O C 2R 60-10* M O C 2R 60-15 POWER OPTO Isolator 2 Amp Random-Phase Triac Output * Motorola Preferred Devices This device consists of a gallium arsenide infrared emitting diode optically

10 Gbps TOSA

Abstract: dfb laser diode
Contextual Info: 10 Gbps 1310 nm MQW DFB Laser Diode Modules-TOSA PRELIMINARY C-13-DFB10-TX-SSC2 Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR

peltier cooler

Abstract: Peltier module 58520 L8413 808nm source photonics LLD1007E02 817 diode CW laser diode
Contextual Info: HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 Figure 1: Radiant Output Power vs. Forward Current Typ. RELATIVE RADIANT OUTPUT POWER (%) Top(c) = 20 °C 20 10 10 30 20 FORWARD CURRENT If (A) PRELIMINARY DATA

10 Gbps TOSA

Abstract: C-13-010-TX-SSC2
Contextual Info: 10 Gbps 1310 nm MQW FP Laser Diode Modules-TOSA PRELIMINARY C-13-010-TX-SSC2 Features • Uncooled FP laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode Packaging • Integrated 4-pin TO-18 TOSA package, with built-in isolator

dl520

Contextual Info: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission

850nm LED

Abstract: LED 850nm LED 850nm 60mA 5278 an 5278
Contextual Info: P/N: C-85-1315T-09-XX 850nm LED Diode Transmitter Features l Light emitting diode with multi-quantum-well structure l Uncooled operation at -10~+85° C l For 50/125um Multi-mode Application Packaging l 8 Pin Package with ST Port Application l Design for fiber optic networks

Contextual Info: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)

Contextual Info: RKP411KS Composite Pin Diode for Antenna Switching REJ03G1574-0200 Rev.2.00 Sep 10, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)

Contextual Info: SK 10 BGD 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter Q$RS E$ E$YZ QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$YZL M ; E$0%&P *' L W &- C¥ Diode - Inverter SEMITOP 3 1-phase bridge rectifier +

Contextual Info: LASER DIODE SPECIFICATIONS Customer : Model : QL67F6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer ♦ OVERVIEW QL67F6S-A/B/C is a MOCVD grown 670 nm band Gain-Guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10 mW for

DAiode

Abstract: 650nm 50mw
Contextual Info: TO SHIBA TOLD9441 M C TO SHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MC Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T c = —10~70°C Pin Connection 10 LD 0 3 V/ 0Ì) PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

dfb10

Contextual Info: 10 Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TJ-SSC2I Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for SC connector

FAJ 40

Abstract: Diode FAJ Diode FAJ 22 FAJ 42
Contextual Info: SK 10 DGDL 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper Q$RS E$ E$YZ QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$YZL M ; E$0%&P *' L W &- C¥ Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier +

10 Gbps TOSA

Contextual Info: 10 Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TJ-SLC2I Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for LC connector