DIODE C 10 PH Search Results

Contextual Info: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)

dfb10

Contextual Info: 10 Gbps 1310 nm MQW-DFB Laser Diode Module-TOSA C-13-DFB10-TJ-SSC2I Features • Uncooled DFB laser diode with MQW structure • Hermetically sealed active component • Built-in InGaAs monitor photodiode • Single frequency operation with high SMSR • Integrated 4-pin TO-18 TOSA package, with built-in isolator, for SC connector

Contextual Info: P/N: C-13-1315T-10-XX 1310nm Laser Diode Transmitter Features l Laser diode with multi-quantum-well structure l Un-cooled operation at -40~+85° C l For Single-mode Application l High Optical Power l High Speed Packaging l 8 Pin Package with ST Port l The label of series number is put at the back of the device

Contextual Info: P/N: C-13-1315C-10-XX 1310nm Laser Diode Transmitter Features l Laser diode with multi-quantum-well structure l Un-cooled operation at -40~+85° C l For Single-mode Application l High Optical Power l High Speed Packaging l 8 Pin Package with SC Port l The label of series number is put at the back of the device

TUBE 5y3

Abstract: 5Y3GT 5y3 tube 5y3-GT 5y3 rectifier B562 c 5Y3G data 5y3gt tube 5Y3 G TUBE tube 5y3gt
Contextual Info: 5Y3-G T 5Y3-GT ET-T965 Page 1 10-55 TWIN DIODE TUBES FOR FULL-WAVE POWER RECTIFIER APPLICATIONS DESCRIPTION AND RATING The 5Y3-GT is a filamentary twin-diode designed for full-wave rectifier operation in power supplies that have d-c output current requirements up to

s2rc40r

Abstract: S2RC10 SHINDENGEN DIODE color code diode
Contextual Info: SHINDENGEN ] » TENTATIVE <y No.T J320 1.8A S 2R C S 2R C 10 —S2R C 6 0 INCOMBUSTIBLE CENTER-TAPPED SILICON DIODE STACKS Features Dimensions 1. Use o f a high-quality incombustible plastic for molding gives these T y p e c o lo r oode ( I p la c e )

6DI30Z-100

Abstract: 2di100z-100 1DI200Z-120 1DI200Z-100 6DI30Z-120 M106 M613 1DI300Z-100 2DI150Z-100 2DI30Z-100
Contextual Info: Z-SERIES DARLINGTON MODULES <§ Ratings and Characteristics VoltageRating Type 10 • Part Number V cbo V Vceo (V) C ollectoi Current VcEX(sua{ (cont.) 00 Ic Thermal Resistance Rth(j -c> (A) °C/W(max) Trans. Diode DCCurrentGain SwitchlngTlmes(max.) Hfe

Telefunken u 257

Contextual Info: Temic TCDTlllO G S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The TCDTll 10(G) consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a

PUSF0012ZA-A

Abstract: RKP200KP RKP411KS
Contextual Info: RKP411KS Composite Pin Diode for Antenna Switching REJ03G1574-0100 Rev.1.00 Aug 24, 2007 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.35 pF max Low forward resistance. (rf = 1.3 Ω max @IF = 10 mA, f = 100 MHz)

Contextual Info: Temic BPV10 S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPV 10 is a very high speed and high sensitive PIN photo­ diode in a standard T - l 3/i plastic package. Due to its w aterclear epoxy the device is sensitive to visible and in­ frared radiation.

PF5004

Abstract: PF5001 PF5000 PF5002 PF5006 PF5008 PF5010 JEDEC TRAY DIMENSIONS
Contextual Info: PF5000 – PF5010 W TE PO WE R SEM IC O ND U C TO RS 50A 1/2" PRESS-FIT DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Typical IR less than 10µA A DO-21 Dim Min Max A 15.63 16.14 B 12.75 12.83 C 8.89 10.04 D

Contextual Info: □IXYS Diode Modules V ’ RSM V RRM 900 1300 1500 1700 1900 ^FRMS ^FAVM MDD MDD MDD MDD MDD "^"vj — ^~VJM VR= 0 Ji2dt L- H 95-08N1 B 95-12N1 B 95-14N1B 95-16N1B 95-18N1B * TVJ = 45° C VR= 0 TVj — VR= 0 t t t t = = = = 10 ms 8.3 ms 10 ms 8.3 ms 50 (60

IXYS snubber DIODE

Abstract: LOW POWER DIODE DIODE DATABOOK D-68623
Contextual Info: DSEC 16-04AS HiPerFREDTM Epitaxial Diode IFAV = 2x 10 A VRRM = 400 V trr = 30 ns with common cathode and soft recovery Preliminary Data VRSM VRRM V V 400 400 TO-263 AB Type DSEC 16-04AS A C A A Symbol Conditions IFRMS IFAVM TC = 140°C; rectangular, d = 0.5

PFW3500

Abstract: PFW3501 PFW3502 PFW3504 PFW3506 PFW3508 PFW3510 ic shipping tray jedec tray
Contextual Info: PFW3500 – PFW3510 W TE PO WE R SEM IC O ND U C TO RS 35A 1/2" FLAG LEAD PRESS-FIT DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Typical IR less than 10µA J D Mechanical Data ! ! ! ! ! H Case: All Copper Case and Components

Contextual Info: I.R. S w itc h e s 00 Input Diode D e s c r ip t io n T ype Vf No. Output Phototransistor B V ceo Ir MA Volts Volts Volts max Ifm a max min min lc ja 1.5 20 10 3.0 30 100 VR B V ceo min Coupled IC E O CTR If = 0 lE[ia nA max 100 100 D % min If mA Volts 2.5

Contextual Info: OIXYS MEO 450-12DA Preliminary Data Fast Recovery Epitaxial Diode FRED Module V RSM ^RRM 1200V 1200V Symbol • frm s ^favm IFRM Test Conditions 2460 A A A A A A A 6 4 0 453 < 10 ^ S' reP- ratin9> pulse width limited by TVJM TVJ = 150°C TVJ = 45° C TVJ = 150°C

oki cross

Abstract: 1625nm laser diode "Thermoelectric Cooler" OL6201N-A10 1625nm LD CAN 1625nm TO 56
Contextual Info: DATA SHEET O K I L A S E R P R O D U C T S OL6201N-A10 MQW Laser Diode Cooled Dil Module 1625 nm +/-10 nm, 1 mW October 1999 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

oki cross

Abstract: OL6205N-1-A10 Laser Diode 14 pin DIL
Contextual Info: DATA SHEET O K I L A S E R P R O D U C T S OL6205N-1-A10 MQW Laser Diode Uncooled Dil Module 1625 nm +/-10 nm, 1 mW October 1999 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––

1842m

Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Contextual Info: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser

fast recovery diode 54

Abstract: BYC10-600CT BYC5-600 BYV29
Contextual Info: Philips Semiconductors Product specification Rectifier diode ultrafast, low switching loss FEATURES BYC10-600CT SYMBOL • Dual diode • Extremely fast switching • Low reverse recovery current • Low thermal resistance • Reduces switching losses in associated MOSFET

GEOY6860

Abstract: Q62702-K0047 Q62702-P5313
Contextual Info: 2fach-Silizium-PIN Fotodiode in SMT 2-Chip Silicon PIN Photodiode in SMT KOM 2125 KOM 2125 FA KOM 2125 KOM 2125 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm und bei 880 nm KOM 2125 FA • Kurze Schaltzeit (typ. 25 ns)

laser diode philips

Abstract: 1300 nm Laser 40 mW 1300 laser diode rise time laser diod laser diode class I laser diode
Contextual Info: Philips Components CQF60/D _ A_ DEVELOPMENT DATA This data sheet contains advance information and specifications which are subject to change w ith o u t notice. BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH SINGLE MODE FIBRE PIGTAIL

Contextual Info: N AMER PHILIPS/DISCRETE DL.E D • ^ 5 3 ^ 3 1 0011351 7 ■ BYV33 SERIES _ J y T-03-19 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward

9V bridge rectifier ic

Abstract: 60-16NO1 ixys vub 70 -16
Contextual Info: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads