DIODE BYW 200 Search Results

Contextual Info: S G S— THOMSON STC D 1• 7 ^ 5 3 7 59C 02216 O T H O M S O N -C S F DIVISIO N S EM IC O N DUCTEUR S DISCRETS D OüüEait. 7 T-*>2~U BYW 08-50-200, R HIGH EFFICIENCY FAST RECOVERY RECTIFIERS R E D R E S S E U R S R A P ID E S A H A U T R E N D E M E N T

Diode 1N4007 DO-7 Rectifier Diode

Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Contextual Info: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2

Diode BYW 56

Abstract: tfk 731 BYW56 BYW 56 V diodes byw BYW 52 TFK 03 diodes diode BYW N5059 DIODE in 5060
Contextual Info: m 'W ? BYW 52 E8 BYW 56 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter Applications: Power rectifier Besondere Merkmale: Features: • Stoßspannungsfest • Controlled avalanche characteristics • Hermetische G laspassivierung

BYW 64 bridge rectifier

Abstract: diode BYW 64
Contextual Info: BYW 27-50.BYW 27-1000 Silizium Gleichrichter Silicon Rectifier 1A Nominal current Nennstrom 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung DO-41 Plastic case Kunststoffgehäuse <*-nax. qf 2.6 0.4 Weight approx. Gewicht ca.

E81734

Abstract: BYW series BYT16P-400 BYW29G-200 BYW4200B BYW51G-200 BYW77G-200 SMBYW01-200 SMBYW02-200 STPR1020CB
Contextual Info: POWER RECTIFIERS ULTRAFAST DIODES SMA SMB SMC D2PAK DPAK SURFACE MOUNT ULTRAFAST RECTIFIERS Voltage max Current 1 Amp 2 Amps 4 Amps 200 Volts 400 Volts 8 Amps 2 x 5 Amps 2 x 8 Amps 2 x 10 Amps 25 Amps 1 Amp 3 Amps 30 Amps Part Number VF (max) (*) @ rated current

N5625

Abstract: diodes byw N5624 diodes byw 88 600 r
Contextual Info: BYW82.BYW86 Vishay Telefunken Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • Low reverse current • High surge current loading • Electrically equivalent diodes:

BYW77100

Abstract: BYW77-150 BVW77-150 BYW31-100 BYW31-150 BYW31-50 BYW77-100 BYW77-50 UES701 UES702
Contextual Info: UES701 BYW31-50 BYW77-50 UES702 BYW31-100 BYW77-100 UES703 BYW31-150 BYW77-150 RECTIFIERS High Efficiency, 25 A FEATURES DESCRIPTION • • • • • • Designed to meet the efficiency'dem and of sw itchin g type power supp lies, these devices are useful in m any sw itching

N5062

Abstract: Diode BYW 56 TELEFUNKEN BYW-56 N-5061 diodes byw diodes byw 88 600 r N5059
Contextual Info: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features • C ontrolled avalanche characteristics • G lass passivated junction • H erm etically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:

IN5059

Abstract: 1n5062 equivalent diodes byw Diode BYW 56 BYW 52 BYW 200 1N5060 diode BYW 54 byw 56 equivalent
Contextual Info: Te m ic BYW52.BYW56 T ELEFU NK EN Sem iconductors Silicon Mesa Rectifiers Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Electrically equivalent diodes:

Diode BYW 56

Contextual Info: N AMER PHILIPS/DISCRETE bbS3T31 002bb77 525 » A P X b5E D BYW54 to 56 CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes, capable of absorbing reverse transients. They are intended for rectifier applications in colour television circuits as well as general purpose appli­

diode BYW 200

Abstract: diode BYW 60
Contextual Info: Te m ic BYW72.BYW76 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristic Applications Fast rectifier and sw itch for exam ple for T V -lin e

diodes byw

Contextual Info: Temic BYW82.BYW86 S e m i c o n d u c t o r s Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • C ontrolled avalanche characteristics • L ow reverse current • H igh surge current loading • E lectrically equivalent diodes:

silicon diode byw 60

Abstract: byw 36 v diode BYW 60
Contextual Info: Te m ic BYW32.BYW36 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • Glass passivated junction • H erm etically sealed package • L ow reverse current • Soft recovery characteristic Applications Fast rectifier and switch for exam ple for T V -lin e

diode BYW 64

Contextual Info: ^ EMIC BYW82.BYW86 T EL E FU N K E N Sem iconductors Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Controlled avalanche characteristics • L ow reverse current • High surge current loading • Electrically equivalent diodes:

diode BYW 91

Abstract: byw 98 100 fast diode byw 98 200 fast diode byw 98 100
Contextual Info: BYW32.BYW36 Vishay Telefunken Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Low reverse current • Soft recovery characteristics Applications Fast rectifier and sw itch fo r exam ple fo r T V -lin e o ut­

Contextual Info: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYW97 series FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of

BYW29E-100

Abstract: T0220AB byw29e to3 HEATSINK BYW29E100
Contextual Info: P H ILIP S INTERNATIONAL D ata sheet status Preliminary specification d ate of issue February 1991 G ENERA L DESCRIPTION Glass passivated, high efficiency, rugged epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra-fast

IN4744

Abstract: EC52-3C8 core ferroxcube 768XT188-3E2A BYW 64 bridge rectifier Ferroxcube 846XT250-3C8 CS-3842A application dc to ac instant power supply ckt diagram 500w Full bridge transformer diode BYW 64
Contextual Info: CS-3842A Single CS-3842A Provides Control for 500W/200kHz Current-Mode Power Supply in the circuit Figure 1 . The advantages of current mode control are: Introduction With the introduction of the CS-3842A PWM IC, currentmode is possible for power supplies of a wide range of

in4744

Abstract: Ferroxcube 3C8 PQ-4040 byv 32 diode ferroxcube core 3c8 BYW 64 bridge rectifier 768XT188 PQ4040 EC52-3C8 Diode BYW 95B
Contextual Info: CS3842A Single CS3842A Provides Control for 500W/200kHz Current-Mode Power Supply in the circuit Figure 1 . The advantages of current mode control are: Introduction With the introduction of the CS3842A PWM IC, currentmode is possible for power supplies of a wide range of

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

DYW29-150

Abstract: es140 byw80 BYW29 diode rectifier BYW29-100 BYW29-150 byw29100 BYW80-50 BYW29-50 UES1404
Contextual Info: UES1401 UES1402 UES1403 UES1404 RECTIFIERS High Efficiency, 7A and 8A FEATURES • Very Low Forward Voltage • Very Fast Recovery Tim es • Econom ical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150

diode BYW 64

Abstract: B81121 X2 mkt TDB7812T B81121 B32530 1nf 100v mkt 100v mkt b81121 x2 7812T B41822
Contextual Info: Monitor -IC Nr 1 2 3 4 5 6 7 8 9 10 11 12 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Name BR1 C11 C12 C13 C14 C15 C21 C22 C23 C24 C25 C26 C27 C31 C32 C33 C34 C35 C36 C37 C38 C39 C41 C42 C43 C44 C51 C52 C53 C54 C61 C62

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

C5047

Abstract: BY05-15W BY05-12W 1C1224 33JF BY05-05 BY05-15W05L BY05-12W06L BY05-12
Contextual Info: Correspond to Analog Ciruits, Ultra Low Noise 8mVp-p Small Size, Long-Life, Isolated Type DC-DC Converter 1.5 Watt BY-I Series Bellnix* Adopted In World Important Electronic Devices. BY-L series is a long-life, ultra low noise and isolated type DC-DC converter which is most suitable for analog circuits and analog-digital circuits.