DIODE BYM Search Results

diode bym

Abstract: BYM 300 GA 160 Eupec Power Semiconductors C67067-A2900-A70 VR25 bsm 300 ga 160 dn
Contextual Info: BYM 300 A 120 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 120 DN 2 Type VR25 IFDC BYM 300 A 120 DN2 1200V 450A Package Ordering Code

bsm 300 ga 160 dn

Abstract: din IEC 68-1 Diode 300 A single power diode package
Contextual Info: BYM 300 A 120 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 120 DN 2 Type VR25 IFDC BYM 300 A 120 DN2 1200V 450A Package Ordering Code

Eupec Power Semiconductors

Abstract: ga 25 diode VR25
Contextual Info: BYM 300 A 170 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 Type VR25 IFDC BYM 300 A 170 DN2 1700V 380A Package Ordering Code

a2902

Abstract: Eupec Power Semiconductors C67070-A2902-A67 VR25
Contextual Info: BYM 600 A 170 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 E 3166 Type VR25 IFDC BYM 600 A 170 DN2 1700V 600A Package Ordering Code

16VCA

Abstract: diode 1700v
Contextual Info: BYM 600 A 170 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 E 3166 Type VR25 IFDC BYM 600 A 170 DN2 1700V 600A Package Ordering Code

BYM63

Abstract: reverse blocking diode specification
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM63 Ripple blocking diode Product specification Supersedes data of December 1995 File under Discrete Semiconductors, SC01 1996 Jun 10 Philips Semiconductors Product specification Ripple blocking diode

4500a

Abstract: BYM300B170DN2 GE DIODE
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BYM 300 B 170 DN2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Sperrspannung der Diode Diode rerverse voltage

BYM200B170DN2

Abstract: BYM 200 B 170 DN2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BYM 200 B 170 DN2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Sperrspannung der Diode Diode rerverse voltage

EUPEC DD 105 N 16 L

Abstract: all type of thyristor EUPEC tt 162 n 16 EUPEC Thyristor thyristor tt 162 n EUPEC Thyristor TT thyristor tt 162 n 12 tt 162 n 16 module bsm 25 gp 120 Eupec bsm 25 gb 120
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 96 Type designations Presspacks IGBT Modules T 930 S 18 T M C T D A 930 1 4 6 7 8 9 3 thyristor diode asymmetric thyristor average on state current A standard ceramic disc high power ceramic disc

Contextual Info: BYM36A, BYM36B, BYM36C, BYM36D, BYM36E www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage • Material categorization:

bym36cv

Abstract: SOD64 BYM36 BYM36A BYM36B BYM36C BYM36D BYM36E
Contextual Info: BYM36 VISHAY Vishay Semiconductors Fast Avalanche Sinterglass Diode \ Features • • • • • Glass passivated Hermetically sealed package Very low switching losses Low reverse current High reverse voltage Applications Switched mode power supplies High-frequency inverter circuits

Contextual Info: BYM36A, BYM36B, BYM36C, BYM36D, BYM36E Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage • Compliant to RoHS directive 2002/95/EC and in

Contextual Info: BYM36A, BYM36B, BYM36C, BYM36D, BYM36E Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage • Compliant to RoHS directive 2002/95/EC and in

Contextual Info: BYM26A . BYM26E 2.3 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-201AD Plastic Voltage 200 to 1000 V Current 2.3 A at 55 °C ø1.27 ±0.05 ø5.2 ±0.1 Dimensions in mm. R ±0.3 9.1 ±0.5 62.5 • Glass Passivated Junction Mounting instructions

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

rgp10j diode

Abstract: FR207 diode diode rgp10g by399 diode RGP15G diode diode fr302 diode RGP30G RGP30B SDO-15 FR104 diode
Contextual Info: Axial Diode Series FAST RECOVERY RECTIFIERS Maximum Maximum Maximum TYPE Peak Maximum Average Rectified Current Reverse at Half-wave Resistive load 50HZ Voltage Forward Peak Reverse Surge Current Current at 50HZ PRV and Maximum Forward Recovery Superimposed TA=25°C

Contextual Info: PDP SPMTM FVP18030IM3LSG1 Sustain Features General Description • Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply bymeans of built-in HVIC It is an advanced samart power module SPMTM that Fairchild has newly developed and designed to provide very compact

Contextual Info: PDP SPMTM FVP12030IM3LEG1 Energy Recovery Feature General Description • Use of high speed 300V IGBTs with parallel FRDs • Single-grounded power supply bymeans of built-in HVIC It is an advanced smart power module SPMTM that Fairchild has newly developed and designed to provide very compact

MBG046

Abstract: mbg037 BYM56E BYM56A MBG027 BYM56 BYM56B BYM56C BYM56D M3D118
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYM56 series Controlled avalanche rectifiers Product specification Supersedes data of April 1992 1996 May 24 Philips Semiconductors Product specification Controlled avalanche rectifiers BYM56 series

BYM26D/A52R

Contextual Info: P h ilips Sem iconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM26 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD64 package, using a high temperature alloyed • High maximum operating temperature construction. This package is

Contextual Info: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD64 package, using a high temperature alloyed construction. • High maximum operating temperature

BYM36A

Contextual Info: Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifiers BYM36 series FEATURES DESCRIPTION • Glass passivated Rugged glass SOD64 package, using a high temperature alloyed construction. • High maximum operating temperature

Contextual Info: N AUER PHILIPS/DISCRETE b^E • D ^ 5 3 ^ 3 1 QQStibMM 0fl2 BAPX BYM56 SfcKlfcS _A _ CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, capable of absorbing reverse transients.

Contextual Info: BYM12-xxx, EGL41x www.vishay.com Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • Ideal for automated placement