DIODE BODY MARKING A 4 Search Results
DIODE BODY MARKING A 4 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80C186-10/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
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54121/BCA |
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54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
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54AC20/SDA-R |
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54AC20/SDA-R - Dual marked (M38510R75003SDA) |
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DIODE BODY MARKING A 4 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. |
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UF5210 -100V UF5210 O-220 UF5210L-TA3-T UF5210G-TA3-T QW-R502-845 | |
FDS6990AS
Abstract: FDS6990A A1726
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FDS6990AS FDS6990AS FDS6990A A1726 | |
di 856
Abstract: di+856
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UF624Z UF624Z UF624ZL-TN3-T UF624ZG-TN3-T UF624ZL-TN3-R UF624ZG-TN3-R QW-R502-856 di 856 di+856 | |
4n65
Abstract: mosfet 4n65
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4N65-U 4N65-U O-220F1 QW-R502-A71 4n65 mosfet 4n65 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged |
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4N70-R 4N70-R O-220F1 QW-R502-A66 | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged |
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4N70-C 4N70-C 4N70L-TFat QW-R502-A89 | |
dg1u
Abstract: XD2PA22 XD2PA24 XD2PA12 XD2PA14 ZB2BV6 D1L20 xb2bs8445 ZB2BY4101 xd2pa
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ZB2-BW008) AC-15 DC-13 XD2-PA22 XD2-PA14 XD2-PA24 40x30 dg1u XD2PA22 XD2PA24 XD2PA12 XD2PA14 ZB2BV6 D1L20 xb2bs8445 ZB2BY4101 xd2pa | |
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged |
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4N70K 4N70K QW-R502-841 | |
FDP053N08BContextual Info: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80V, 120A, 5.3mW Features Description • RDS on = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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Contextual Info: UniFETTM FDP24N40 tm N-Channel MOSFET 400V, 24A, 0.175Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. |
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FDP24N40 FDP24N40 | |
fdp054n10Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDP054N10 FDP054N10 O-220 | |
MOSFET 100VContextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mW Features Description • RDS on = 4.6mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDP054N10 FDP054N10 O-220 MOSFET 100V | |
IRFHM831
Abstract: IRFHM831TRPBF IRFHM831TR2PBF AN-1154 J-STD-020D
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-97539A IRFHM831PbF IRFHM831 IRFHM831TRPBF IRFHM831TR2PBF AN-1154 J-STD-020D | |
Contextual Info: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS |
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IRFH7932PbF IRFH7932TRPbF IRFH7932TR2PbF 078mH, | |
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Contextual Info: IRFR4104 IRFU4104 D VDSS = 40V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS on = 5.5mΩ G ID = 42A S Description Specifically designed for Automotive applications, thi |
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IRFR4104 IRFU4104 AN-994 | |
5V07BContextual Info: PESD5V0L7BAS; PESD5V0L7BS Low capacitance 7-fold bidirectional ESD protection diode arrays Rev. 4 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description Low capacitance 7-fold bidirectional ESD protection diode arrays in small plastic |
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OT505-1 OT96-1 5V07B | |
Contextual Info: IRFR3710Z IRFU3710Z Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 100V RDS on = 18mΩ G ID = 42A S Description Specifically designed for Automotive applications, thi |
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IRFR3710Z IRFU3710Z AN-994. | |
Contextual Info: FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features Description • RDS on = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to |
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FDP80N06 145pF) O-220 | |
FDPF5n50uContextual Info: TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, |
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FDP5N50U FDPF5N50UT FDPF5n50u | |
831 SO8 MARKINGContextual Info: ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits Device V BR DSS RDS(on) max Q2 Q1 60V -60V 55mΩ @ VGS = 10V 105mΩ @ VGS = -10V ID TA = +25°C 4.7A -3.9A • Low Input Capacitance |
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ZXMC4559DN8 AEC-Q101 DS34498 831 SO8 MARKING | |
Contextual Info: UniFETTM FDP19N40 tm N-Channel MOSFET 400V, 19A, 0.24Ω Features Description • RDS on =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. |
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FDP19N40 FDP19N40 | |
FDPF6N60ZUTContextual Info: UniFE TM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω Features Description • RDS on = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar |
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FDP6N60ZU FDPF6N60ZUT FDPF6N60ZUT | |
Contextual Info: UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar |
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FDP5N50F FDPF5N50FT | |
FDPF5N50FTContextual Info: UniFET TM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar |
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FDP5N50F FDPF5N50FT FDPF5N50FT |