DIODE BODY MARKING A 4 Search Results

1SR35-400A

Abstract: ta7125 marking ROHM
Contextual Info: 1SR35-400A Diodes Rectifier diode 1SR35-400A !External dimensions Units : mm !Applications General purpose rectification CATHODE BAND (GREEN) !Features 1) Glass sealed envelope. (GSR) 2) High reliability. φ0.6±0.1 C A 28.0±2 4.3±0.5 28.0±2 Month of manufacture stamped on body in digital marking.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

diode marking code 98

Abstract: ComChip Date code SMD MARKING code ta
Contextual Info: Supper Low Capacitance SMD ESD Protection Diode CPDQ5V0USP-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. 0.041 1.05 0.037(0.95) - ESD Rating of Class 3(>16kV) per Human Body Mode. - Supper low capacitance 0.5 pF Typ.

Contextual Info: SMD ESD Protection Diode CPDQ12V0U-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. - ESD Rating of Class 3 >16kV per Human Body Mode. 0.041(1.05) 0.037(0.95) - Low body height: 0.017”(0.43mm) - Low Leakage 0.033(0.85)

FDS6990AS

Abstract: FDS6990A A1726
Contextual Info: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Contextual Info: SMD ESD Protection Diode CPDQ3V3U-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. - ESD Rating of Class 3 >16kV per Human Body Mode. 0.041(1.05) 0.037(0.95) 0.033(0.85) 0.030(0.75) - Low body height: 0.017”(0.43mm)

di 856

Abstract: di+856
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF624Z Preliminary Power MOSFET 4.4A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF624Z is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate

Contextual Info: PD -97337A IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l

Contextual Info: PD -97337 IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l l

fdpf10n50

Abstract: diode 4A 400v ultra fast FDPF10N50U Ultra Low voltage rds mosfet FDPF10N50UT
Contextual Info: FDPF10N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 8 A, 1.05  Features Description • RDS on = 850 m ( Typ.) @ VGS = 10 V, ID = 4 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

4n65

Abstract: mosfet 4n65
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-U Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-U is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

500v 5a ultra fast recovery diode

Abstract: mosfet TEST
Contextual Info: FDPF5N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 4.5 A, 1.55  Features Description • RDS on = 1.25  (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.

Contextual Info: PD - 97559 IRFH9310PbF HEXFET Power MOSFET VDS -30 RDS on max V S S 6 mm mΩ nC RG (typical) 110 2.8 ID -21 A (@VGS = 10V) Qg (typical) (@TA = 25°C) D S D 5 mm 4.6 G D Ω D PQFN 5mm x 6mm Applications • Charge and Discharge Switch for Notebook PC Battery Application

dg1u

Abstract: XD2PA22 XD2PA24 XD2PA12 XD2PA14 ZB2BV6 D1L20 xb2bs8445 ZB2BY4101 xd2pa
Contextual Info: Control and signalling units Ø 22 mm fixing Type XB2-B, with chromium plated metal bezel Characteristics Environment Conforming to standards EN 947-5-1 Ambient air temperature Operation : - 25…+ 70 °C Degree of protection IP 65 : Double-headed pushbuttons : IP 40 (IP 65 with sealing boot ZB2-BW008)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70K Power MOSFET 4.4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

FDP053N08B

Contextual Info: FDP053N08B_F102 N-Channel PowerTrench MOSFET 80V, 120A, 5.3mW Features Description • RDS on = 4.2mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

52N20

Abstract: fdb fairchild FDB52N20
Contextual Info: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

Contextual Info: UniFETTM FDP24N40 tm N-Channel MOSFET 400V, 24A, 0.175Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

1S721

Abstract: FDP040N06
Contextual Info: FDP040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS on = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDI040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0mΩ Features General Description • RDS on = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

fdp054n10

Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet