DIODE BODY MARKING A 4 Search Results

1SR35-400A

Abstract: ta7125 marking ROHM
Contextual Info: 1SR35-400A Diodes Rectifier diode 1SR35-400A !External dimensions Units : mm !Applications General purpose rectification CATHODE BAND (GREEN) !Features 1) Glass sealed envelope. (GSR) 2) High reliability. φ0.6±0.1 C A 28.0±2 4.3±0.5 28.0±2 Month of manufacture stamped on body in digital marking.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

diode marking code 98

Abstract: ComChip Date code SMD MARKING code ta
Contextual Info: Supper Low Capacitance SMD ESD Protection Diode CPDQ5V0USP-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. 0.041 1.05 0.037(0.95) - ESD Rating of Class 3(>16kV) per Human Body Mode. - Supper low capacitance 0.5 pF Typ.

FDS6676AS

Abstract: FDS6676
Contextual Info: FDS6676AS 30V N-Channel PowerTrench SyncFET Features General Description • 14.5 A, 30 V. RDS ON max= 6.0 mΩ @ VGS = 10 V RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V ■ Includes SyncFET Schottky body diode ■ Low gate charge (45nC typical) ■ High performance trench technology for extremely low

Contextual Info: SMD ESD Protection Diode CPDQ12V0U-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. - ESD Rating of Class 3 >16kV per Human Body Mode. 0.041(1.05) 0.037(0.95) - Low body height: 0.017”(0.43mm) - Low Leakage 0.033(0.85)

FDS6990AS

Abstract: FDS6990A A1726
Contextual Info: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET Features General Description • 7.5 A, 30 V. RDS ON = 22 mΩ @ VGS = 10 V RDS(ON) = 28 mΩ @ VGS = 4.5 V The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Contextual Info: SMD ESD Protection Diode CPDQ3V3U-HF RoHS Device Halogen Free Features 0402/SOD-923F - IEC61000-4-2 Level 4 ESD protection. - ESD Rating of Class 3 >16kV per Human Body Mode. 0.041(1.05) 0.037(0.95) 0.033(0.85) 0.030(0.75) - Low body height: 0.017”(0.43mm)

di 856

Abstract: di+856
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF624Z Preliminary Power MOSFET 4.4A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF624Z is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate

irfh7936pbf

Abstract: 4617
Contextual Info: PD -97337A IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l

Contextual Info: FDS6699S 30V N-Channel PowerTrench SyncFET Features • 21 A, 30 V General Description Max RDS ON = 3.6 mΩ @ VGS = 10 V Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

Contextual Info: PD -97337A IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l

Contextual Info: PD -97337 IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l l

FDPF5n50u

Abstract: diode 4A 400v ultra fast
Contextual Info: FDPF5N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 4 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

831 SO8 MARKING

Contextual Info: ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits Device V BR DSS RDS(on) max Q2 Q1 60V -60V 55mΩ @ VGS = 10V 105mΩ @ VGS = -10V ID TA = +25°C 4.7A -3.9A • Low Input Capacitance

Contextual Info: FDPF5N50NZF N-Channel UniFETTM II FRFET MOSFET 500 V, 4.2 A, 1.75  Features Description • RDS on = 1.57  (Typ.) @ VGS = 10 V, ID = 2.1 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS

Contextual Info: DMC4047LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Features and Benefits RDS on max ID TA = +25°C • Low Input Capacitance  Low On-Resistance 24mΩ @ VGS = 10V 6.9A  Fast Switching Speed 32mΩ @ VGS = 4.5V 6.0A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: FDPF10N60ZUT N-Channel UniFETTM II Ultra FRFETTM MOSFET 600 V, 9 A, 0.8  Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 4.5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and

Contextual Info: FDPF5N50NZF N-Channel UniFETTM II FRFET MOSFET 500 V, 4.2 A, 1.75  Features Description • RDS on = 1.57  (Typ.) @ VGS = 10 V, ID = 2.1 A UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and

Contextual Info: FDPF6N60ZUT N-Channel UniFETTM Ultra FRFETTM MOSFET 600 V, 4.5 A, 2  Features Description • RDS on = 1.7  (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

4n65

Abstract: mosfet 4n65
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-U Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-U is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N65-R Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-R is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-R Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary Power MOSFET 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged