DIODE BJE 80 Search Results
DIODE BJE 80 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V2 |
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Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
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Zener Diode, 6.8 V, USC | Datasheet | ||
| CUZ20V |
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Zener Diode, 20 V, USC | Datasheet | ||
| CUZ24V |
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Zener Diode, 24 V, USC | Datasheet | ||
| CUZ16V |
|
Zener Diode, 16 V, USC | Datasheet |
DIODE BJE 80 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
2SK2651-01MRContextual Info: F U JI 2SK2651-01MR SUJM FAP-IIS Series s l TL^U G N-channel MOS-FET 900V 2,5 0 . 6A 50W Min. Typ. Max. Unit V V PA mA > Features - High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V G uarantee Repetitive A valanche Rated |
OCR Scan |
2SK2651-01MR 0004b77 | |
DIODE BJE smd
Abstract: DIODE BJE deutsch BJE deutsch CLC420 CLC420ALC CLC420AMC smd transistor 1kw smd transistor AJp 65
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CLC420 300MHz 100V/ms -60dBc 20MHz CLC420B: CLC420AJP/BJP CLC420AJE/BJE CLC420ALC DIODE BJE smd DIODE BJE deutsch BJE deutsch CLC420 CLC420ALC CLC420AMC smd transistor 1kw smd transistor AJp 65 | |
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Contextual Info: FUJI 2SK2691-01R N-channel MOS-FET IS U J M s u ltìU K FAP-IIIB Series 60V > Features 0,0 I Q 70A 100W Outline Drawing TO-3PF - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated 5.5 .35 > Applications - Motor Control |
OCR Scan |
2SK2691-01R | |
gunn diode radar module
Abstract: Gunn Diode e band
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AC2001 DS5074 gunn diode radar module Gunn Diode e band | |
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Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT «-FA ST-O N -TA B ♦100 High Power Switching Applications Motor Control Applications F e a tu re s • High input im pedance • High speed: tf = 1 .0|is Max. |
OCR Scan |
MG25Q2YS91 PW038Â | |
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Contextual Info: TOSHIBA INSULATED GATE BIPO LAR TRAN SISTO R MG100Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 1.Ojas Max. t|y = 0.5ns (Max.) |
OCR Scan |
MG100Q2YS11 PW03890796 | |
KB817
Abstract: KB847
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KB847 KB847 E225308. DSAD1552 MAR/14/2005 16-pin 25pcs/each KB817 | |
Mark ED SMD Diode
Abstract: diode smd ED 84 DIODE BJE smd phiv 590
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4000/Rolle, JESD22-A114-D Mark ED SMD Diode diode smd ED 84 DIODE BJE smd phiv 590 | |
SMD GZ
Abstract: Q65110A1058 LW W5SG smd transistor GY smd transistor HX
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24-mm 800/Rolle, SMD GZ Q65110A1058 LW W5SG smd transistor GY smd transistor HX | |
BA 09 HContextual Info: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LB G6SP, LT G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: mehr Licht durch |
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Contextual Info: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LCW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss |
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2700K; 3000K; 3500K; 4200K | |
Q65110A1058
Abstract: DIODE BJE smd
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24-mm 800/Rolle, Q65110A1058 DIODE BJE smd | |
OS-IN-2007-021Contextual Info: SIDELED long life Enhanced optical Power LED ThinGaN Lead (Pb) Free Product - RoHS Compliant LW A6SG Released OS-IN-2009-009 Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, eingefärbter diffuser Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch |
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OS-IN-2009-009 D-93055 OS-IN-2007-021 | |
Q65110A4385
Abstract: ic lm 7500
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OS-PCN-2006-020-A Q65110A4385 ic lm 7500 | |
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HP330B
Abstract: DG400-405 DG400DJ DG402DJ DG404DJ DG400 DG404
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DG400-405 DG400 DG403 HP330B DG400DJ DG402DJ DG404DJ DG404 | |
LWA6SGContextual Info: Hyper SIDELED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW A6SG Released Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, eingefärbter diffuser Silikon - Verguss • Besonderheit des Bauteils: mehr Licht durch |
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Contextual Info: Platinum DRAGON white with Chip Level Conversion CLC Lead (Pb) Free Product - RoHS Compliant LW W5SN Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 700 mA |
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LV W5SN
Abstract: Q65110A1470
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OS-PD-2008-016 OS-PD-2009-006 LV W5SN Q65110A1470 | |
LTW5SG
Abstract: Q65110A1470 BJE 80 diode led class 2 blue
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24-mm LTW5SG Q65110A1470 BJE 80 diode led class 2 blue | |
golden dragon argus
Abstract: smd marking ky White LED silicone OSRAM SMD DIODE MARKING NK w5km 6R SMD MARKING CODE marking code smd ky KS 0302
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Golden DRAGON Argus
Abstract: smd marking ky 1T4T ALL SMD COD smd transistor HX W5KM-1T4T-35 D-93055 Q65110A8259
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D-93055 Golden DRAGON Argus smd marking ky 1T4T ALL SMD COD smd transistor HX W5KM-1T4T-35 Q65110A8259 | |
LT523
Abstract: LBA6SG diode AR S1 77
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D-93049 720-LBA6SGS1T235Z A6SG-S1T2-35-Z 720-LTA6SGV1AB36Z A6SG-V1AB-36-Z LT523 LBA6SG diode AR S1 77 | |
Q65110A7886
Abstract: LW A6SG-V2AB-5K8L
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OS-PD-2009-009 Q65110A7886 LW A6SG-V2AB-5K8L | |
tcx 0456
Abstract: LCW W5SM W5SM TCX 0413 LCWW5SM osram LCW W5SM SMD mark code H4
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24-mm tcx 0456 LCW W5SM W5SM TCX 0413 LCWW5SM osram LCW W5SM SMD mark code H4 | |