DIODE BJE Search Results
DIODE BJE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE BJE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SMD diode sg 46
Abstract: SMD diode sg 03
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bap50-03sca61smd diode sg 46smd diode sg 03 | |
diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
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bap51bap51-03diode a62diode smd ed 74+1 | |
R1560P2Contextual Info: ISL9R1560P2 Data Sheet Title L9 560 bje A, 0V alth ode) utho eyw s tersi File Number 4913.2 15A, 600V Stealth Diode Features The ISL9R1560P2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current |
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isl9r1560p2r1560p2 | |
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Contextual Info: ISL9R3060G2 Data Sheet Title L9R 60G bjec 0A, 0V alth ode utho eyw s A, 0V alth ode, ersil rpor on, mico ucto o7) eato OCI O fmar ge ode seO nes March 2001 File Number 5003.1 30A, 600V Stealth Diode Features The ISL9R3060G2 is a Stealth™ diode optimized for low |
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isl9r3060g2 | |
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Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET 1PS76SB70 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES |
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1ps76sb70sca60115104/00/01/pp8 | |
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Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET 1PS76SB40 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS76SB40 FEATURES |
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1ps76sb40sca60115104/00/01/pp8 | |
1PS76SB21
Abstract: BP317
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1ps76sb21sca60115104/00/01/pp8bp317 | |
1PS59SB21
Abstract: MARKING CODE 21
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1ps59sb21sc-59msa314sca64+2 | |
1PS76SB21
Abstract: lem 811
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1ps76sb21sca645002/00/02/pp8lem 811 | |
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Contextual Info: DISCRETE SEMICONDUCTORS [M m SM EET 1PS79SB70 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB70 FEATURES |
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1ps79sb70sc-79sca60115104/00/01/pp8 | |
BAV23S l31
Abstract: diode 1407
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bav23ssca645002/00/04/pp8bav23s l31+1 | |
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Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS79SB40 Schottky barrier diode Product specification Supersedes data of 1999 Mar 08 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS79SB40 FEATURES |
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1ps79sb40sc-79115002/00/02/pp8 | |
1PS301
Abstract: LTA 703 S
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1ps301ps301sc70-3sca64+2 | |
BAI 59 DIODE
Abstract: T346 1PS59SB20 AN 6752
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1ps59sb20sc-59115104/00/01/pp8bai 59 diode+2 | |
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Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BAS516 High-speed diode 1998 Aug 31 Product specification File under Discrete Semiconductors, SC01 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode BAS516 PINNING FEATURES |
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bas516mam408 | |
1PS302Contextual Info: DISCRETE SEMICONDUCTORS [Mm SMEET 1PS302 High-speed double diode 1999 May 06 Product specification Supersedes data of 1996 Oct 04 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed double diode 1PS302 FEATURES DESCRIPTION |
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1ps302ps302sc70-3sca64+1 | |
1PS59SB21Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T 1PS59SB21 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Jul 28 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS59SB21 |
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1ps59sb21sc-59msa314115104/00/01/pp8 | |
BG521Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SyiIT BAV170 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 Philips Sem iconductors 1999 May 11 PHILIPS Philips Semiconductors Product specification Low-leakage double diode FEATURES BAV170 PINNING |
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bav170115002/00/03/pp8bg521 | |
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Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 1PS74SB23 Schottky barrier diode 1999 Apr 26 Product specification Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS74SB23 PINNING • Ultra fast sw itching speed |
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1ps74sb23115002/00/01/pp8 | |
FF300R12KE4Contextual Info: Technische Information / technical information FF300R12KE4 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode 62mm C-series module with trench/fieldstop IGBT4 and optimized EmCon Diode IGBT-Wechselrichter / IGBT-inverter |
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ff300r12ke4 | |
BAP51-03
Abstract: DIODE S4 52 diode AY 101 AY106 AY103
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bap51bap51-03sca64125004/00/02/pp8+4 | |
bap64-03
Abstract: lm 9805 DIODE ED 99
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bap64-03lm 9805diode ed 99 | |
BAP64-05Contextual Info: DISCRETE SEMICONDUCTORS Æm SIHIEET BAP64-05 Silicon PIN-diode Objective specification Philips Sem iconductors 1998 Dec 04 PHILIPS Philips Semiconductors Objective specification Silicon PIN-diode BAP64-05 PINNING FEATURES • High voltage, curre n t controlled. |
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bap64-05 | |
BAP64-02
Abstract: v 817 y
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bap64-02mam405v 817 y | |