DIODE BFX ST Search Results

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

bfm 2 TERMINAL DIODE

Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction

Diode GFK

Abstract: DIODE BFT marking code GFX DIODE GEZ DIODE Diode GFK 48 general semiconductor marking code GFX BFM General Semiconductor diode smc bfk GGR diode GGP 16 DIODE
Contextual Info: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

GFX DIODE

Abstract: Diode GFK Gex DIODE DIODE BFT marking code BFM LF bgv DIODE GGV diode ggz diode Diode GHM bdv 83 do
Contextual Info: PL IA NT CO M *R oH S Model CD214C is currently available, although not recommended for new designs. Model SMCJ is preferred. Features • ■ ■ ■ ■ Lead free RoHS compliant* Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts

Diode GFK

Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode smc bfk ghr 84 diode bfk 79 a diode marking GDg on semiconductor gex 33 diode diode marking 307 GDE on semiconductor
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series

Contextual Info: SKT 760 THYRISTOR BRIDGE,SCR,BRIDGE Capsule Thyristor Line Thyristor SKT 760 Features # $%&'% * '%(+, *+-% .)(/ *%&+')* # # # # )0-1,+(2& 3+4-1,% 4+*5+6% 72& 8219,% -)8%8 *22,)06 :/+,2. 8%-)60 .)(/ -)06,% -)8%8 *22,)06 ;0(%&0+()20+, -(+08+&8 *+-% <77=-(+(% +08 &%>%&-% >2,(+6%- 14

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

Diode GFK

Abstract: GFX DIODE diode marking GDE on semiconductor Gex DIODE diode marking BFK on semiconductor Diode BFM diode smc bfk Diode Gfg 33 GEZ DIODE DIODE gde 18
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series

BFK 79

Abstract: diode marking GDE on semiconductor bem diode diode smc bfk Diode GFK 48 gdp 45 diode Diode GFK GFX DIODE Diode BFM bgv DIODE
Contextual Info: PL IA NT CO M *R oH S Features Applications • RoHS compliant* ■ IEC 61000-4-2 ESD Min. Level 4 ■ Surface Mount SMC package ■ IEC 61000-4-4 EFT ■ Standoff Voltage: 5.0 to 170 volts ■ IEC 61000-4-5 Surge ■ Power Dissipation: 1500 watts SMCJ Transient Voltage Suppressor Diode Series

diode BFT 99

Abstract: Diode GEP 5C Diode GFT DIODE BFT marking code GEZ DIODE GEZ 304 DIODES transient voltage suppressor diode diode marking GDE on semiconductor
Contextual Info: Features • ■ ■ Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

marking diode KE

Abstract: diode ed 5ca marking KE diode diode BFT 99 GEZ DIODES GFX DIODE t100a t100c 214B CD214C
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E *R Features • ■ ■ ■ ■ Lead free versions available RoHS compliant lead free version * Surface Mount SMC package Standoff Voltage: 5.0 to 170 volts Power Dissipation: 1500 watts CD214C Transient Voltage Suppressor Diode Series

SC-75

Abstract: SiB419DK SiB419DK-T1-GE3
Contextual Info: New Product SiB419DK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.060 at VGS = - 4.5 V - 9a 0.082 at VGS = - 2.5 V - 9a 0.114 at VGS = - 1.8 V - 8.7 VDS (V) - 12 • Halogen-free • TrenchFET Power MOSFET

SC75

Abstract: SiB419DK SiB419DK-T1-E3 7044
Contextual Info: New Product SiB419DK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)f 0.060 at VGS = - 4.5 V - 9a 0.082 at VGS = - 2.5 V - 9a 0.114 at VGS = - 1.8 V - 8.7 VDS (V) - 12 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

SM15T22CA AND BEX

Abstract: bem diode BdP 285 SM15T33CA SM15T10A SM15T12A SM15T15A SM15T18A SM15T22A sm15t36ca
Contextual Info: SM15T6V8A/220A SM15T6V8CA/220CA TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 1500 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8 V to 220 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION

MARKING code mfx stmicroelectronics

Abstract: STMicroelectronics marking code date 645
Contextual Info: SM15T6V8A/220A SM15T6V8CA/220CA  TRANSILTM FEATURES • ■ ■ ■ ■ ■ PEAK PULSE POWER : 1500 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8 V to 220 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION

SiA413DJ

Abstract: SiA413DJ-T1-GE3
Contextual Info: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET

STM date code TO-220

Contextual Info: SM15T6V8A/220A SM15T6V8CA/220CA TRANS IL FEATURES • PEAK PULSE POWER: 1500 W 10/1000|is ■ BREAKDOWN VOLTAGE RANGE : From 6.8 V to 220 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSETIME ■ UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection

SC-75

Abstract: SiB419DK SiB419DK-T1-GE3
Contextual Info: New Product SiB419DK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f, g 0.060 at VGS = - 4.5 V -9 0.082 at VGS = - 2.5 V -9 0.114 at VGS = - 1.8 V -2 VDS (V) - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: Gì. SGS-THOMSON SM15T6V8,A/220,A SM15T6V8C,CA/220C,CA \u TRANSILTM FEATURES . PEAK PULSE POWER= 1500 W @ 1ms • BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR . FAST RESPONSE TIME ■ UL RECOGNIZED DESCRIPTION

SiA413DJ

Abstract: SiA413DJ-T1-GE3 marking 22b sc70 SiA413 bfx DIODE
Contextual Info: New Product SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12 a 0.10 at VGS = - 1.5 V -3 • Halogen-free • TrenchFET Power MOSFET

GEZ 44 A diode

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1500W > SMCJ-HR series SMCJ-HR Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The SMCJ-HR High Reliability series is designed specifically to protect sensitive electronic equipment from

Contextual Info: SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12a 0.100 at VGS = - 1.5 V -3 Qg (Typ.) 23 nC • TrenchFET Power MOSFET

SiA413

Abstract: SIA413DJ
Contextual Info: SiA413DJ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12a 0.100 at VGS = - 1.5 V -3 Qg (Typ.) 23 nC • TrenchFET Power MOSFET

diode 6v8a

Abstract: 6v8a diode 001 6V8A ST MEX Diode BFX ST 6v8ca SM15T22CA ST BEX marking bgv diode met st
Contextual Info: SM15T TRANSIL Features • Peak pulse power: 1500 W 10/1000 µs ■ Breakdown voltage range: from 6.8 V to 220 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ UL recognized A K Unidirectional Bidirectional SMC (JEDEC DO-214AB)