DIODE BAX 12 Search Results

BAX53

Abstract: BAX52 fast recovery epitaxial diode Bridge bax 53
Contextual Info: BAX 52 BAX 53 SILICON PLANAR DIODES U L T R A F A S T D IO D E B R ID G E A S S E M B L IE S The BAX 52 and BAX 53 are silicon planar epitaxial diode bridges in Jedec T O -12 and TO-72 metal cases respectively. They are designed for very high speed applications.

BAX73

Abstract: BAX71 ta 7176 BAX56 diode T-77 BAX65 BAX62 DIODE 73 BAX57 BAX58
Contextual Info: BAX 56to 73 SILICON PLANAR DIODES U L T R A FAST C OM M ON A N O D E A N D C O M M O N C A TH O D E A R R A Y S The BAX 56 to BAX 73 are silicon planar epitaxial diode arrays in JedecTO-72, TO-77 or TO-96 metal cases*. They are designed for high speed applications.

marking BAX

Abstract: BAX marking E6327 Q67000-S280 DIN IEC 68-1 Diode BAx
Contextual Info: FRED Diode BAX 280 Preliminary Data ● VRRM 1000 V ● IFRMS 5.5 A ● trr 55 ns ● Soft recovery characteristics Type Ordering Code Tape and Reel Information BAX 280 Q67000-S280 E6327: 1000 pcs/reel Pin Configuration 1 2 3 4 not con- A nected C A Marking

BAX12

Abstract: 74127
Contextual Info: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic

BAY41

Abstract: BAY43 bax12 BAY42
Contextual Info: COMPUTER DIODE BAY41-BAY43 BAY60 BAX 12 Switching FEATURES DESCRIPTION • Metallurgical Bond • Planar Passivated This series offers Metallurgical Bonding and is very popular for general purpose switching applications. • 00-35 ABSOLUTE MAXIMUM RATINGS. AT 25°C

S279

Abstract: IGBT Transistor bsp280 BAX marking bipolar transistor td tr ts tf marking BAX E6327 Q67000-S279
Contextual Info: IGBT Transistor BSP 280 Preliminary Data ● ● ● ● ● ● ● ● VCE 1000 V I C 2.5 A N channel MOS input voltage-controlled High switch speed Very low tail current Latch-up free Suitable freewheeling diode BAX 280 Type Ordering Code Tape and Reel

Diode BAY 61

Abstract: Diode BAY 55 Diode BAY 80 3AX11 BXY 36 DIODE diode sax 34 bxy26 Diode BAY 68 Diode BAY 23 BAX11
Contextual Info: /licrowave semiconductor diodes and components licrowave PN silicon diodes Type Fig. Nr. GHz ft ns ÄthJC K/W 10.15 33 2 10 33 2 10 3AX 11/10 34 60 3AX11/IU 34 60 o / • Ö6V 00 cj at £/r = 6 V pF CO tf BR V 60 4,7.6,8 47 1 12 34 60 3,3.4,7 47 1 12

Diode BAY 46

Abstract: Diode BAY 45 Diode BAY 21 Diode BAY 80 Diode BAY 19 BAY 73 diode Diode BAY 41 Diode BAY 72 Diode BAY 42 bav 21 diode
Contextual Info: th o m so n -csf general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général Case \> F A V 200.225 m A 100.150 m A 50.90 m A 400 m A Vr( V » \ 10 25 €£043 1N456 J 1N 456 A W 449)1 1 30 rtm a a j

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

Diode BAY 71

Abstract: Diode BAY 45 SFD43 Diode BAY 46 Diode BAY 88 BAW21 ESM 3070 1n 4009 diode BAY67 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m s o n -c s f Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 25 J €£043 1N456 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

BAX12

Abstract: bay43
Contextual Info: Erosemi corp/ uatertoun 5üe d Switching <1347^3 0012377 524 • U N I T BAY41-BAY43 BAY60 BAX 12 FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and Is very popular for general purpose switching applications.

Contextual Info: 2. E q u i va l e n t . C i r c u i i zrr-L -t— OE 2 Ò "C urrent Control C i r c u i t C 1 Ò Ò B 3 1 A b s o l u t e Maxi auro R a t i n g s ( T.i-2r>C ) d E«D £- sS £> B 12 C o l l c c t o r -crai t i e r v o l t a g e ì 1 5 E c = S o-< *?>.e

Contextual Info: «COL Ratings and characteristics of Fuji I GBT 22367^2 0 Q02421 2 ÔT M BT Module 2 . Equivalent Circuit (B 1 ) (B 2 ) 3 . Absolute Haxiaua Katings ( Tj =25 *C) This m ateria! and the information herein is the property o f Fuji Electric C o ,Ltd .Th e y shall be neither rep ro d u ced , c o p io c .

Contextual Info: tClRi'J tSzd PgflP — — — - £ . 9-, ? ^ - ^PH ¿ *?-3 /4 . Van \ tn .^«t, A»* This materia and the information herein is the property of Fuji Electric Co,Ltd.They shall be neither reproduced, copiud, lont. or disclosed in any way w hatsoever for the use of any

Contextual Info: • ^ 5 3 1 3 1 0Q2b3bQ 582 H A P X N AMER PHILIPS/DISCRETE BAX12 b*lE » _y \ _ SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable of absorbing transients repetitively. It is a fast,

Contextual Info: I 2. Equivalent Circuit CBÍ 3. CB2) Absol ut e Maxi mura Ra t i n g s Symbols I teas This m a te ria l and the inform ation herein is the p 'O p e rty o f Fuji Electric Co„Ltd They shall be neither re p ro d u c e d , c o p ie d , le nt, or disclosed in any way w h a ts o e v e r for the use of a n y

Contextual Info: Ratings and characteristics of Fuji I G B T M B T 2 M B I Y 5 — 6 Module (TENTATIVE) 1. Outline Drawing Unit : BB * Isolation ; UJ Voltage : AC 2500 V 1 lim ite Tab type terminals (AMP No.110 equivalent) 9 3 -M 5 DATE CHECKED < 7o,V\ bflE _ I APPROVED

Diode 1N4007 DO-7 Rectifier Diode

Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Contextual Info: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2

BAX BOARD

Abstract: TVS RS422
Contextual Info: TVS T ra n s ie n t Voltage SupDnessons Low C ap acitan ce □ i o de A r r a y DESCRIPTION This Bi-directional Diode Array TVS family is a series of low capacitance silicon transient suppressors for use in applications where voltage transients can permanently damage voltage sensitive compo­

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

Contextual Info: ¿be ^¿haooo at¿9E3a and characteristics of Fuji loim Ratings î G B 7' M B T Module I 2. Equivalent Circuit of Module 3, Equivalent Circuit o+ 4. Absolute Maximum Ratings ( Tj=25 *C) Symbols This m a te ria ! and the inform ation herein is the p ro p erty

Contextual Info: CRY S TA L S E M I C O N D U C T O R m *im a m Semiconductor Corporation 47E D 254b3E4 8 • CVS CS3903 CS3904 _ _ + 0005157 'T 5 S -0 7 1.5 V and 3.0 V Voltage References Features General Description • High Accuracy CS3903: +3.0V Output @ ±700 [iV

Contextual Info: Am3101/3101-1 64-Bit Write Transparent, Inverting Output, Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Standard version; Address access time 50 ns Low power: Ice typically 75 mA Internal ECL circuitry for optimum speed/power perfor­ mance over voltage and temperature