DIODE BAT 19 Search Results

diode rectifier siemens

Contextual Info: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution BAT 62-02W L 1 =C Q62702-A1028 h Pin Configuration < Marking Ordering Code CM Type

diode RA 225 R

Abstract: MARKING CODE A1 SOT343
Contextual Info: SIEMENS BAT 62-07W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 3 o- N 2 -o EHAQ70G8 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration BAT 62-07W 62s

Contextual Info: BAT 47 _ BAT 48 ¿ 7 / SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessivevoltagesuch as electrostaticdischarges.

450KW

Contextual Info: BAT 63 Silicon Schottky Diode ● Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol Values

smd diode code WP

Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
Contextual Info: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: BAT 45 SMALL SIGNAL SCHOTTKY DIODE DO 35 Glass DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive Peak Reverse Voltage Value

Contextual Info: BAT 45 SMALL SIGNAL SCHOTTKY DIODE DO 35 Glass DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive Peak Reverse Voltage Value

Contextual Info: LPioduet*, Una. TELEPHONE 973 378-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA BAT 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications.

Contextual Info: SGS-THOMSON * 7 # . l« e iI Í L I « M D g t BAT 17, D S SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION BAT 17 is a metal silioon junction diode featuring low turn-on voltage, low capacitance and ultrafast switching. Single or double series connected di­ odes are available. Two double diodes can be

F 407 Diode

Abstract: Marking STMicroelectronics
Contextual Info: BAT 49 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. DO 41 Glass

Contextual Info: /=7 SGS-THOMSON * 7 # . UngœillLigTOOKIDgi BAT 2 9 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Parameter Symbol Value Repetitive Peak Reverse Voltage

Contextual Info: BAT 49 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex­ cessive voltage such as electrostatic discharges. ABSOLUTE RATINGS limiting values

Contextual Info: BAT 41 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex­ cessive voltage such as electrostatic discharges. ABSOLUTE RATINGS limiting values

Contextual Info: BAT 49 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. DO 41 Glass ABSOLUTE RATINGS (limiting values)

Q62702-A118

Contextual Info: SIEMENS BAT 60B Silicon Schottky Diode • Rectifier Schottky diode for mobile communication • Low voltage high inductane • For power supply • For clamping and proptection in low voltage application • For detection and step-up-conversion ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: ¿ 77 S G S - T H O M S O N *•7 # . IM M lilL I« « BAT 45 SMALL SIGNAL SCHOTTKY DIODE DO 35 Glass DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS (limiting values)

Q62702-A118

Contextual Info: SIEMENS BAT 60A Silicon Schottky Diode • Rectifier Schottky diode with extreme low VF drop for mobile communication • For power supply • For clamping and proptection in low voltage application • For detection and step-up-conversion ESD: Electrostatic discharge sensitive device, observe handling precaution!

Q62702-A118

Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014

Contextual Info: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration

Contextual Info: / = T SGS-THOMSON * 7#. TM BAT 49 M M IIU Ig » [l] g Ì SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex­ cessive voltage such as electrostatic discharges.

BAT14T1

Abstract: il 074 14013 BAT14-014ES bat14
Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 14 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • C -esa qualified • ESA/SCC Detail Spec. No.: 5106/014

Contextual Info: LTC4066/LTC4066-1 USB Power Controller and Li-Ion Linear Charger with Low Loss Ideal Diode DESCRIPTION FEATURES n n n n n n n n n n n n n Seamless Transition Between Input Power Sources: Li-Ion Battery, USB and 5V Wall Adapter Low Loss 50mΩ Ideal Diode Path from BAT to OUT

SIN01-12

Abstract: T151 T930
Contextual Info: SIN01 340A • ! Outline Drawings Units mm GENERAL-USE RECTIFIER DIODE ■ i t S : Features • £ i £ t ¿ S ch “ Diffused junction • APJEScM flliS C o m pression contact type : Applications • A - y f “J — Bat t er y ch arg ers Bru sh-less generators

Contextual Info: 2 R I 1 0 0 E 2 x io o a ^ ±/< 7 - î POWER DIODE MODULE ! F e a tu re s 7 z .s * • 3 > 9 - "J ~f • Glass Passivation Chip Easy Connection • fÈiSSt^ Insulated Type I A p p lic a tio n s • -i w < —9 — Inverters • '< 7 7 ^ — Bat t er y Chargers